Eun Joung
Eun Joung Kim, Gwangju KR
Patent application number | Description | Published |
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20130177810 | METHOD FOR SYNTHESIZING NANO SCALE ELECTRODE MATERIALS USING AN ULTRA-FAST COMBUSTION METHOD, AND NANO SCALE ELECTRODE MATERIALS SYNTHESIZED BY THE METHOD - Provided are embodiments of a method of synthesizing nano scale electrode materials using an ultrafast combustion technique and nano scale electrode materials synthesized using the method. The method does not require a process of annealing reaction products required for synthesis of electrode materials or any other additional processes, such as cleaning, filtering, and drying processes, so that it can take only several seconds to several minutes to obtain a resultant product. | 07-11-2013 |
Eun Joung Lee, Gyeonggi-Do KR
Patent application number | Description | Published |
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20130121082 | METHOD OF OPERATING NONVOLATILE MEMORY DEVICE - A method of operating a nonvolatile memory device includes determining whether a program operation is performed on even memory cells coupled to even bit lines of a selected page, setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the program operation for the even memory cells is performed, performing a program operation on the odd memory cells coupled to the odd bit lines, and coupling the odd bit line to the page buffer based on the set coupling resistance value and performing an verification operation for verifying whether threshold voltages of the odd memory cells on which the program operation is performed are a target voltage or more. | 05-16-2013 |
Eun Joung Lee, Cheongju-Si Chungcheongbuk-Do KR
Patent application number | Description | Published |
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20140160846 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block. | 06-12-2014 |