Patent application number | Description | Published |
20080224130 | ORGANIC SEMICONDUCTOR COPOLYMERS CONTAINING OLIGOTHIOPHENE AND n-TYPE HETEROAROMATIC UNITS - An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C | 09-18-2008 |
20080283828 | Organic semiconductor polymer having liquid crystal properties, organic active layer, organic thin film transistor, and electronic device including the same, and methods of fabricating the same - Example embodiments relate to an organic semiconductor polymer, in which fused thiophenes having liquid crystal properties and aromatic compounds having N-type semiconductor properties are alternately included in the main chain of the polymer, an organic active layer, an organic thin film transistor (OTFT), and an electronic device including the same, and methods of preparing the organic semiconductor polymer, and fabricating the organic active layer, the OTFT and the electronic device using the same. This organic semiconductor polymer has improved organic solvent solubility, processability, and thin film properties, and may impart increased charge mobility and decreased off-state leakage current when applied to the channel layer of the organic thin film transistor. | 11-20-2008 |
20080308793 | Composition and organic insulator prepared using the same - Disclosed are a composition including a silane-based organic/inorganic hybrid material having a multiple bond and one or more organic metal compounds and/or one or more organic polymers, an organic insulator including the composition, an organic thin film transistor (OTFT) including the organic insulator and an electronic device including the OTFT. The organic insulator including the composition for preparing an organic insulator has increased charge mobility and an increased on/off current ratio, thus exhibiting improved properties, and the organic thin film transistor manifests uniform properties due to the absence of hysteresis. | 12-18-2008 |
20090043113 | Heteroacene compound, organic thin film including a heteroacene compound and electronic device including an organic thin film - A heteroacene compound, an organic thin film including a heteroacene compound and an electronic device including a thin film are provided. The heteroacene compound is a compound having six rings fused together in a compact planar structure. The compound may be used in an organic thin film and/or applied to electronic devices using a deposition process or a room-temperature solution process. | 02-12-2009 |
20090120495 | Alternating copolymers of phenylene vinylene and oligoarylene vinylene, preparation method thereof, and organic thin flim transister comprising the same - Disclosed herein are an alternating copolymer of phenylene vinylene and oligoarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and oligoarylene vinylene. | 05-14-2009 |
20090189149 | Composition for producing insulator and organic insulator using the same - Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing. | 07-30-2009 |
20090218564 | Alternating copolymers of phenylene vinylene and biarylene vinylene, preparation method thereof, and organic thin flim transister comprising the same - Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and biarylene vinylene. | 09-03-2009 |
20090263932 | Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films - Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices. | 10-22-2009 |
20100065830 | Organic thin film transistor and method for fabricating the same - Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process. | 03-18-2010 |
20100148229 | INSULATING RESIN COMPOSITION - An insulating resin composition is provided. The insulating resin composition includes (A) a silicon-based polymer having either primary or secondary amine groups or both, (B) an organometallic compound, and (C) a solvent. The physicochemical properties of the insulating resin composition are maintained during processing steps for the fabrication of a semiconductor device. Therefore, the use of the insulating resin composition prevents deterioration of the characteristics of the semiconductor device arising from defects, spots, aggregates, and the like, in an insulating film and reduces the hysteresis of the semiconductor device to improve the characteristics of the semiconductor device. | 06-17-2010 |
20100200842 | Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure - Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same. | 08-12-2010 |
20110089409 | Alternating copolymers of phenylene vinylene and biarylene vinylene, preparation method thereof, and organic thin film transistor comprising the same - Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and biarylene vinylene. | 04-21-2011 |
20120104377 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME - Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process. | 05-03-2012 |
20120228595 | COMPOSITION FOR PRODUCING INSULATOR AND ORGANIC INSULATOR USING THE SAME - Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing. | 09-13-2012 |