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Eun Hyun Park

Eun Hyun Park, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090085054III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 Å in an n-side contact layer.04-02-2009
20090085057III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 Å in an n-side contact layer.04-02-2009
20110073870III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.03-31-2011

Eun Hyun Park, Seongnam-Si KR

Patent application numberDescriptionPublished
20100102353III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate, a plurality of III-nitride semiconductor layers positioned on the substrate and including an active layer which generates light by recombination of electrons and holes, and a surface scattering the light generated in the active layer, the scattering surface including a first surface which is etched and a second surface which caps the first surface.04-29-2010
20100127239III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light-emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer doped with a p-type dopant, an active layer disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and including a quantum well layer to generate light by recombination of electrons and holes, and a diffusion barrier layer disposed between the quantum well layer and the p-type nitride semiconductor layer to be in contact with both layers, having a surface formed to make the interface with the p-type nitride semiconductor layer smooth, and to prevent diffusion of the p-type dopant into the quantum well layer.05-27-2010

Patent applications by Eun Hyun Park, Seongnam-Si KR

Eun Hyun Park, Kyunggi-Do KR

Patent application numberDescriptionPublished
20080283865III-Nitride Compound Semiconductor Light Emitting Device - The present invention relates a III-nitride compound semiconductor light emitting device in which a first layer composed of a carbon-containing compound layer, such as an n-type or p-type silicon carbide (SiC), silicon carbon nitride (SiCN) or carbon nitride layer (CN) layer, is formed on the p-type III-nitride semiconductor layer of the existing III-nitride semiconductor light emitting device, and a second layer composed of a III-nitride semiconductor layer with a given thickness is formed on the first layer.11-20-2008
20090197397Method of Manufacturing Semiconductor Device - The present invention discloses a method of manufacturing a semiconductor device including a plurality of semiconductor layers grown on a substrate and removing the substrate from the plurality of semiconductor layers. The method of manufacturing the semiconductor device comprises a first step for growing a III-nitride compound semiconductor layer between the substrate and the plurality of semiconductor layers, and a second step for removing the substrate by etching the III-nitride compound semiconductor layer.08-06-2009
20090321713METHOD OF CONTROLLING ACTIVE LAYER OF III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention is to provide a method for controlling an active layer of a Hi-nitride semiconductor light emitting device by doping a barrier layer(s) selected from the active layer to suppress light emission in a specific well layer(s).12-31-2009
20100012920III-Nitride Semiconductor Light Emitting Device - The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer. The active layer is disposed over the n-type nitride compound semiconductor layer. The III-nitride compound semiconductor light emitting device includes a masking film made of MgN and grown on the p-type nitride compound semiconductor layer, and at least one nitride compound semiconductor layer grown after the growth of the masking film made of MgN.01-21-2010
20100032689III-Nitride Compound Semiconductor Light Emitting Device - The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.02-11-2010

Patent applications by Eun Hyun Park, Kyunggi-Do KR