| Patent application number | Description | Published |
|---|
| 20090008786 | Sputtering Target - The present invention provides a sputtering target comprising aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm and preferably in the range of 0.1 to 50 ppm and more preferably from 0.1 to 10 ppm weight which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target. | 01-08-2009 |
| 20090022982 | Electronic Device, Method of Manufacture of Same and Sputtering Target - An electronic device having a first electrode including a metal oxide and a second electrode including an aluminum alloy film and manufacturing technology therefor. The second electrode is directly contacted and electrically connected to the first electrode, wherein, in the contact interface between the aluminum alloy film and said first electrode, at least a part of alloy components constituting the aluminum alloy film exist as a precipitate extending across the contact interface to contact the metal oxide to the aluminum alloy film by the precipitate. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows for elimination of a barrier metal in such an electronic device. | 01-22-2009 |
| 20090214374 | High purity target manufacturing methods - A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc. | 08-27-2009 |
| 20100000860 | Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same - The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets. | 01-07-2010 |
| 20100038241 | Systems and methods for a target and backing plate assembly - A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results. | 02-18-2010 |
| 20100044415 | Sputtering target assembly and method of making same - A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target ( | 02-25-2010 |
| 20110139614 | SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET - A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target. | 06-16-2011 |
| 20110203921 | METHOD OF BONDING ROTATABLE CERAMIC TARGETS TO A BACKING STRUCTURE - This invention relates to a rotatable cylindrical magnetron sputtering apparatus and related process. More specifically, the invention relates to a cylindrical target assembly for a cylindrical magnetron sputtering device which includes a target portion where the target portion is metal, metal oxide, or ceramic and is not bonded to any backing tube. Instead, the cylindrical target is resiliently, yet fixedly mounted to the backing tube by a multiplicity of resilient, yieldable contacts. The assembly allows the target portion to heat up uniformly and expand, thereby allowing the cylindrical magnetron to operate at increased power levels. | 08-25-2011 |
