| Patent application number | Description | Published |
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| 20090008426 | Addition of D2 to H2 to Detect and Calibrate Atomic Hydrogen Formed By Dissociative Electron attachment - A method of detecting and calibrating dry fluxing metal surfaces of one or more components to be soldered by electron attachment using a gas mixture of reducing gas comprising hydrogen and deuterium, comprising the steps of: a) providing one or more components to be soldered which are connected to a first electrode as a target assembly; b) providing a second electrode adjacent the target assembly; c) providing a gas mixture comprising a reducing gas comprising hydrogen and deuterium between the first and second electrodes; d) providing a direct current (DC) voltage to the first and second electrodes to form an emission current between the electrodes and donating electrons to the reducing gas to form negatively charged ionic reducing gas and molecules of hydrogen bonded to deuterium; e) contacting the target assembly with the negatively charged ionic reducing gas and reducing oxides on the target assembly. Related apparatus is also disclosed. | 01-08-2009 |
| 20090054674 | Mechanical Enhancement of Dense and Porous Organosilicate Materials by UV Exposure - Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film. | 02-26-2009 |
| 20100022095 | Selective Etching and Formation of Xenon Difluoride - This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF | 01-28-2010 |
| 20100069689 | Process and System for Providing Acetylene - A system and a process for providing acetylene, preferably at a high purity level (e.g., comprising 100 parts per million (“ppm”), or 10 ppm, or 1 ppm, or 100 parts per billion (“ppb”), or 10 ppb, or 1 ppb or less of solvent), to a point of use, such as a semiconductor manufacturing process, is described herein. In one aspect, there is provided a process for providing a process for providing a high purity acetylene comprising 100 ppm or less solvent to a point of use comprising: providing an acetylene feed stream comprising acetylene and solvent at a temperature ranging from 20° C. to −50° C.; and introducing the acetylene feed stream to a purifier at a temperature ranging from −50° C. to 30° C. to remove at least a portion of the solvent contained therein and provide the high purity acetylene. | 03-18-2010 |
| 20100304047 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 12-02-2010 |
| 20100304313 | Process Solutions Containing Surfactants - Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention. | 12-02-2010 |
| 20110171583 | Process Solutions Containing Surfactants - Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention. | 07-14-2011 |
| 20120012201 | METHOD AND EQUIPMENT FOR SELECTIVELY COLLECTING PROCESS EFFLUENT - An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent. | 01-19-2012 |
