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Etsuko Nishimura

Etsuko Nishimura, Hitachiota-Shi JP

Patent application numberDescriptionPublished
20110027662LITHIUM ION SECONDARY BATTERY - A lithium ion secondary battery includes: a cathode that stores/releases lithium ion at a potential not lower than an oxidation-reduction equilibrium potential between halogen ion and halogen; an anode that stores/releases lithium ion, preferably containing carbon; and a non-aqueous electrolytic solution composed of a non-aqueous solvent having dissolved therein an electrolyte. The non-aqueous electrolytic solution contains lithium halide or a halogen molecule. Instead of the non-aqueous electrolytic solution, a polymer solid electrolyte containing lithium halide or halogen molecule may be used.02-03-2011

Etsuko Nishimura, Tokyo JP

Patent application numberDescriptionPublished
20100135040Light-Emitting Element and Display Device Using Same - A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.06-03-2010

Patent applications by Etsuko Nishimura, Tokyo JP

Etsuko Nishimura, Hitachiota JP

Patent application numberDescriptionPublished
20080246387Image display device and manufacturing method of the same - The present invention aims to form an electron emission film containing an alkali metal compound or the like without causing alkali attack on the metal wiring. An FED display device comprises: an electron source including an electron emission film 10-09-2008
20080272685Dispay unit - Hillock is prevented when aluminum wiring is used in order to reduce line resistance in a display unit. The aluminum wiring is formed into multi-layer structure and each layer contains an element which is not solidly solubilized with aluminum. The element are preferably rare earth metal such as Nd, high-melting point transition metals such as Ta and noble metals such as Pd. Intermetallic compounds of aluminum and the element are educed at an interface of the multi-layer wiring and it is prevented that grains of aluminum are enlarged to form hillock.11-06-2008
20080303406Image Display Device and Manufacturing Method of the Same - The present invention provides an image display device which can lower the resistance of scanning signal lines, can ensure the enhancement of reliability of supply of electricity and conductivity and the reliability of separation of elements, can exhibit excellent display characteristic, and can possess an extremely prolonged lifetime. The scanning signal line has the stacked film structure constituted of a lower layer film formed of an aluminum film and an upper layer film formed of an aluminum alloy film containing aluminum as a main component.12-11-2008
20090009054Image display device and method of manufacturing the same - An MIM electron source is comprised of a lower electrode, an insulation film and an upper electrode. By depositing a coat film on the upper electrode through a sputter process using a sputter target of alkaline glass having a modifier component of an alkaline metal oxide or alkaline earth metal oxide, the work function of the upper electrode can be lowered. As a result, the electron emission efficiency can be increased stably.01-08-2009
20090057132Zinc Oxide Thin Film, Transparent Conductive Film and Display Device Using the Same - A zinc oxide thin film having desired crystallinity is fabricated. The present invention provides a zinc oxide thin film which laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The c-axis of the crystalline thin film is oriented in a direction substantially perpendicular to the substrate. A zinc surface of being one polar surface of the crystalline thin film in the c-axis direction is formed in the uppermost layer. In addition, the invention also provides a zinc oxide thin film which is laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The zinc oxide thin film is formed on a metal thin film layer by a thin film fabricating technique.03-05-2009
20090146930ORGANIC ELECTRO-LUMINESCENT DISPLAY APPARATUS - Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.06-11-2009
20110108841SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS USING THE SEMICONDUCTOR DEVICE - Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.05-12-2011
20110193529Lithium-Ion Secondary Battery System - A lithium-ion secondary battery system is provided which can improve the cycle life and the storage property of a lithium-ion secondary battery and can decrease a discharge capacity which cannot be recharged. The lithium-ion secondary battery system includes a lithium-ion secondary battery having a cathode, an anode including carbon, and a non-aqueous electrolyte; a charge/discharge circuit for putting the lithium-ion secondary battery on charge according to a charge control parameter; and an arithmetic processing section for controlling the charge/discharge circuit. The arithmetic processing section obtains battery characteristics of the lithium-ion secondary battery, changes a value of the charge control parameter when the arithmetic processing section determines that the battery characteristics satisfies a condition for changing the charge control parameter, and restores the value of the charge control parameter to the value before the change when the charge for the lithium-ion secondary battery is finished.08-11-2011
20110206988LITHIUM ION BATTERY - An object of the present invention is to provide a lithium ion battery which is excellent in properties at large current and can be applied to applications requiring high output power even when the mixture layers are made thick. The present invention provides a lithium ion battery including a positive electrode including a positive electrode mixture layer formed on a current collector, a negative electrode including a negative electrode mixture layer formed on a current collector and an electrolyte, the positive electrode and the negative electrode being disposed through the intermediary of a separator, wherein the positive electrode includes as a positive electrode active material a lithium composite oxide represented by LiNi08-25-2011

Patent applications by Etsuko Nishimura, Hitachiota JP

Etsuko Nishimura, Ota JP

Patent application numberDescriptionPublished
20090001868Image display device and manufacturing method thereof - An image display device comprising a back-surface substrate (01-01-2009

Etsuko Nishimura, Chiba JP

Patent application numberDescriptionPublished
20110285269Light-Emitting Element And Display Device Using Same - A light-emitting device includes a substrate and a light-emitting element formed on the substrate. The light-emitting element includes a stacked layer structure portion including a reflective electrode, a light-emitting layer on the reflective electrode and a transparent electrode on the light-emitting layer which are stacked over the substrate with the reflective electrode as a bottom layer, the light-emitting layer having a flat surface provided at least on a portion of the light-emitting layer. A bank is disposed in a peripheral area surrounding the flat surface or on a peripheral portion of the flat surface and has a tilt surface tilted with respect to the flat surface. A conductive film is at least provided on the tilt surface and is electrically connected with the transparent electrode, and forms a reflective surface on the tilt surface, and an optical waveguide layer is provided in an area surrounded by the tilt surface.11-24-2011