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Erwin Hijzen, Blanden BE

Erwin Hijzen, Blanden BE

Patent application numberDescriptionPublished
20080233688Method of Fabricating a Bipolar Transistor - A method of fabricating a bipolar transistor in a first trench (09-25-2008
20090159938METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD - The invention relates to a method of manufacturing a semiconductor device (06-25-2009
20090166753Semiconductor Device and Method of Manufacturing Such a Device - The invention relates to a semiconductor device (07-02-2009
20090200577SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device with a substrate (08-13-2009
20100047987METHOD OF FABRICATING A BIPOLAR TRANSISTOR - The invention provides a method for fabricating a bipolar transistor applying a standard shallow trench isolation fabrication method to simultaneously form a vertical bipolar transistor (02-25-2010
20100052081A SEALING STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a structure (03-04-2010
20100068863Method of Manufacturing a Bipolar Transistor and Bipolar Transistor Obtained Therewith - The invention relates to a method of manufacturing a semiconductor device (03-18-2010
20100237434SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device (09-23-2010
20100289022METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD - The invention relates to a method of manufacturing a semiconductor device (11-18-2010

Patent applications by Erwin Hijzen, Blanden BE