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Ernesto E.
Ernesto E. Marinaro, Saratoga, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090128963 | NARROW TRACK EXTRAORDINARY MAGNETO RESISTIVE [EMR] DEVICE WITH WIDE VOLTAGE TABS AND DIAD LEAD STRUCTURE - A Lorenz magnetoresistive sensor having a pair of voltage leads and a pair of current leads. The voltage leads are located at either side of one of the current leads and are separated by a distance that is substantially equal to the length of a bit to be measured. The Lorenz magnetoresistive sensor can be, for example an extraordinary magnetoresistive sensor having a quantum well structure such as a two dimensional electron gas and a shunt structure formed on an edge of the quantum well structure opposite the voltage and current leads. | 05-21-2009 |
Ernesto E. Marinero, Mountain View, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080278860 | EXTRAORDINARY MAGNETORESISTIVE (EMR) DEVICE WITH NOVEL LEAD STRUCTURE - An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system. | 11-13-2008 |
Ernesto E. Marinoro, Saratoga, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110037464 | TUNABLE GRAPHENE MAGNETIC FIELD SENSOR - A magnetic field sensor employing a graphene sense layer, wherein the Lorentz force acting on charge carriers traveling through the sense layer causes a change in path of charge carriers traveling through the graphene layer. This change in path can be detected indicating the presence of a magnetic field. The sensor includes one or more gate electrodes that are separated from the graphene layer by a non-magnetic, electrically insulating material. The application of a gate voltage to the gate electrode alters the electrical resistance of the graphene layer and can be used to control the sensitivity and speed of the sensor. | 02-17-2011 |
Ernesto E. Murinero, Saratoga, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100073796 | MAGNETIC FIELD SENSOR - A device for sensing a magnetic field is described. The device comprises first, second and third leads and a junction between the leads. The junction and leads are arranged in a plane and the junction is configured to exhibit quantum confinement in a direction perpendicular to the plane. The first lead is arranged on one side of the junction and the second and third leads are arranged on an opposite side of the junction. The first lead is configured to limit angle of spread of charge carriers entering the junction so that, when charge carriers flow into the junction from the first lead, the charge carriers form a substantially nondivergent beam. | 03-25-2010 |