| Patent application number | Description | Published |
|---|
| 20090275691 | METHOD FOR THE PRODUCTION OF CO-EXTRUDATES COMPOSED OF POLYSTYRENE AND OF A CROSSLINKED POLYVINYLPYRROLIDONE WITH REDUCED RESIDUAL STYRENE MONOMER CONTENT - A method for removing residual styrene monomers from co-extrudates comprising polystyrene and water-insoluble, crosslinked polyvinylpyrrolidone, which comprises subjecting an aqueous suspension of the particulate solid co-extrudate to a heat treatment at temperatures of 60 to 99° C., the weight ratio of solid co-extrudate to water in the suspension being 1:1.5 to 1:20, and the concentration of the suspension being kept constant during the treatment. | 11-05-2009 |
| 20090291164 | METHOD FOR REGENERATING AN AUXILIARY FILTERING AGENT - Processes comprising: (i) providing a filter aid comprising a co-extrudate of a water-insoluble polyvinylpyrrolidone and a thermoplastic polymer; (ii) treating the filter aid with aqueous alkali; (iii) subsequently treating the filter aid with an enzyme; and (iv) subsequently thereto carrying out a second treatment with aqueous alkali, to provide a regenerated filter aid, and uses therefor. | 11-26-2009 |
| 20100176069 | METHOD FOR REGENERATING A FILTER AID - Methods for regenerating filter aids which comprise inorganic, natural or semisynthetic filter aids. The method comprises subjecting the filter aid to a first treatment with an aqueous alkaline solution, treating the filter aid with enzymes, treating the filter aid with a surfactant, and subjecting the filter aid a second treatment with the aqueous alkaline solution. The enzyme treatment and the surfactant treatment steps may be carried out simultaneously or in any order. | 07-15-2010 |
| Patent application number | Description | Published |
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| 20090242126 | EDGE ETCHING APPARATUS FOR ETCHING THE EDGE OF A SILICON WAFER - The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer. | 10-01-2009 |
| 20090246444 | EDGE ETCHED SILICON WAFERS - The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer. | 10-01-2009 |
| 20090247055 | METHODS FOR ETCHING THE EDGE OF A SILICON WAFER - The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer. | 10-01-2009 |
| 20110017230 | Method and System for Processing Abrasive Slurry - Systems and methods are provided for processing abrasive slurry used in cutting operations. The slurry is mixed with a first solvent in a tank. The slurry is vibrated and/or ultrasonically agitated such that abrasive grain contained in the slurry separates from the other components of the slurry and the first solvent. After the abrasive grain has settled to a bottom portion of the container, the other components of the slurry and the first solvent are removed from the tank. The abrasive grain may then be washed with a second solvent. The abrasive grain is then heated and is suitable for reuse in an abrasive slurry. | 01-27-2011 |
| 20110158857 | FLUIDIZED BED REACTOR SYSTEMS AND DISTRIBUTORS FOR USE IN SAME - Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide. | 06-30-2011 |
| 20110158888 | METHODS FOR REDUCING THE DEPOSITION OF SILICON ON REACTOR WALLS USING PERIPHERAL SILICON TETRACHLORIDE - Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide. | 06-30-2011 |
