Patent application number | Description | Published |
20090321793 | DEVICE SENSITIVE TO A MOVEMENT COMPRISING AT LEAST ONE TRANSISTOR - The invention relates to a detection device using at least one transistor ( | 12-31-2009 |
20100219893 | RESONANT DEVICE WITH IMPROVED FEATURES - The device resonant comprises a plurality of synchronized oscillators. Each oscillator comprises a resonator which comprises detection means providing detection signals representative of oscillation of the resonator to a feedback loop connected to an excitation input of the resonator. The detection signals control the conductivity of the feedback loop of the oscillator. The excitation inputs of all the resonators are connected to a common point which constitutes the output of the resonant device. A capacitive load is connected between said common point and a reference voltage. | 09-02-2010 |
20100219895 | TRANSISTOR-BASED MICROMETRIC OR NANOMETRIC RESONANT DEVICE - The resonant device comprises an electromechanical resonator of nanometric or micrometric size that comprises a mobile element and a fixed element. Detection means provide detection signals representative of movement of the mobile element with respect to the fixed element to a feedback loop that is connected to an excitation input of the resonator. The resonator is formed on the same substrate as the detection means and feedback loop. The feedback loop comprises at most first and second transistors connected in series between a reference voltage and the excitation terminal. A capacitive load is connected between the excitation terminal and reference voltage. The detection signals control the conductivity of the first transistor. | 09-02-2010 |
20100314668 | DEVICE WITH INTEGRATED CIRCUIT AND ENCAPSULATED N/MEMS AND METHOD FOR PRODUCTION - A method for producing a device including at least one integrated circuit and at least one N/MEMS. The method produces the N/MEMS in at least one upper layer arranged at least above a first section of a substrate, produces the integrated circuit in a second section of the substrate and/or in a semiconductor layer arranged at least above the second section of the substrate, and further produces a cover encapsulating the N/MEMS from at least one layer used for production of a gate in the integrated circuit and/or for producing at least one electrical contact of the integrated circuit. | 12-16-2010 |
20120009713 | MAKING OF A MICROELECTRONIC DEVICE INCLUDING A MONOCRYSTALLINE SILICON NEMS COMPONENT AND A TRANSISTOR THE GATE OF WHICH IS MADE IN THE SAME LAYER AS THE MOBILE STRUCTURE OF THIS COMPONENT - A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region. | 01-12-2012 |
20140162392 | PRODUCTION METHOD FOR A SUSPENDED STRUCTURE COMPONENT AND A TRANSISTOR CO-INTEGRATED ON A SAME SUBSTRATE - A method of forming a microelectronic device comprising, on a same substrate, at least one electro-mechanical component provided with a suspended structure and at least one transistor, the method comprising a step of release of the suspended structure from the electromechanical component after having formed metal interconnection levels of components. | 06-12-2014 |
20150021720 | DEVICE COMPRISING A FLUID CHANNEL FITTED WITH AT LEAST ONE MICROELECTRONIC OR NANOELECTRONIC SYSTEM, AND METHOD FOR MANUFACTURING SUCH A DEVICE - A device comprising a substrate comprising at least one microelectronic and/or nanoelectronic structure comprising at least one sensitive portion and one fluid channel ( | 01-22-2015 |
20150274516 | PROCESS FOR FABRICATION OF A MICROMECHANICAL AND/OR NANOMECHANICAL STRUCTURE COMPRISING A POROUS SURFACE - Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer:
| 10-01-2015 |