| Patent application number | Description | Published |
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| 20080258604 | SYSTEMS AND METHODS FOR LIGHT ABSORPTION AND FIELD EMISSION USING MICROSTRUCTURED SILICON - Methods and systems for absorbing infrared light, and for emitting current are described. A sample, such as a sample containing mainly silicon, is microstructured by at least one laser pulse to produce cone-like structures on the exposed surface. Such microstructuring enhances the infrared absorbing, and current emission properties of the sample. | 10-23-2008 |
| 20090003783 | SUBWAVELENGTH-DIAMETER SILICA WIRES FOR LOW-LOSS OPTICAL WAVEGUIDING - The present invention provides nanometer-sized diameter silica fibers that exhibit high diameter uniformity and surface smoothness. The silica fibers can have diameters in a range of a about 20 nm to about 1000 nm. An exemplary method according to one embodiment of the invention for generating such fibers utilizes a two-step process in which in an initial step a micrometer sized diameter silica preform fiber is generated, and in a second step, the silica preform is drawn while coupled to a support element to form a nanometer sized diameter silica fiber. The portion of the support element to which the preform is coupled is maintained at a temperature suitable for drawing the nansized fiber, and is preferably controlled to exhibit a temporally stable temperature profile. | 01-01-2009 |
| 20090014842 | FEMTOSECOND LASER-INDUCED FORMATION OF SUBMICROMETER SPIKES ON A SEMICONDUCTOR SUBSTRATE - The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface. | 01-15-2009 |
| 20090033929 | SUBSTRATES FOR RAMAN SPECTROSCOPY HAVING DISCONTINUOUS METAL COATINGS - In one aspect, the present invention provides methods for fabricating substrates for use in a variety of analytical and/or diagnostic applications. Such a substrate can be generated by exposing a semiconductor surface (e.g., silicon surface) to a plurality of short laser pulses to generate micron-sized, and preferably submicron-sized, structures on the surface. The structured surface can then be coated with discontinuous metal coating characterized by one or more metalized surface region and a plurality of surface gaps. | 02-05-2009 |
| 20090046283 | METALIZED SEMICONDUCTOR SUBSTRATES FOR RAMAN SPECTROSCOPY - In one aspect, the present invention generally provides methods for fabricating substrates for use in a variety of analytical and/or diagnostic applications. Such a substrate can be generated by exposing a semiconductor surface (e.g., silicon surface) to a plurality of short laser pulses to generate micron-sized, and preferably submicron-sized, structures on the surface. The structured surface can then be coated with a thin metallic layer, e.g., one having a thickness in a range of about 10 nm to about 1000 nm. | 02-19-2009 |
| 20090174026 | SILICON-BASED VISIBLE AND NEAR-INFRARED OPTOELECTRIC DEVICES - In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns. | 07-09-2009 |
| 20090213883 | LASER-INDUCED STRUCTURING OF SUBSTRATE SURFACES - In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods. | 08-27-2009 |
| 20090320529 | METHOD AND APPARATUS FOR MICROMACHINING BULK TRANSPARENT MATERIALS USING LOCALIZED HEATING BY NONLINEARLY ABSORBED LASER RADIATION, AND DEVICES FABRICATED THEREBY - Thermal 3-D microstructuring of photonic structures is provided by depositing laser energy by non-linear absorption into a focal volume about each point of a substrate to be micromachined at a rate greater than the rate that it diffuses thereout to produce a point source of heat in a region of the bulk larger than the focal volume about each point that structurally alters the region of the bulk larger than the focal volume about each point, and by dragging the point source of heat thereby provided point-to-point along any linear and non-linear path to fabricate photonic structures in the bulk of the substrate. Exemplary optical waveguides and optical beamsplitters are thermally micromachined in 3-D in the bulk of a glass substrate. The total number of pulses incident to each point is controlled, either by varying the rate that the point source of heat is scanned point-to-point and/or by varying the repetition rate of the laser, to select the mode supported by the waveguide or beamsplitter to be micromachined. A wide range of passive and active optical and other devices may be thermally micromachined. | 12-31-2009 |
| 20100171948 | METALIZED SEMICONDUCTOR SUBSTRATES FOR RAMAN SPECTROSCOPY - In one aspect, the present invention generally provides methods for fabricating substrates for use in a variety of analytical and/or diagnostic applications. Such a substrate can be generated by exposing a semiconductor surface (e.g., silicon surface) to a plurality of short laser pulses to generate micron-sized, and preferably submicron-sized, structures on the surface. The structured surface can then be coated with a thin metallic layer, e.g., one having a thickness in a range of about 10 nm to about 1000 nm. | 07-08-2010 |
| 20100171949 | NON-INVASIVE OPTICAL ANALYSIS USING SURFACE ENHANCED RAMAN SPECTROSCOPY - In one aspect, a system for use in product packaging is disclosed that includes a polymeric sensing substrate coupled to a package such that a front sensing surface thereof is in contact with a portion of a product, e.g., a fungible product, stored in the package and a back surface thereof is accessible via an environment external to the package. The system further includes a radiation source adapted to direct radiation to the substrate's back surface such that the radiation would interact with one or more molecular species of the product that are in contact with the substrate's sensing surface. The system also includes a detector that is adapted to detect radiation returning from the substrate in response to its illumination by the radiation source. The front surface of the sensing substrate can comprise a plurality of micron-sized or submicron-sized ridges having a discontinuous or continuous metal coating, e.g., a metallic layer with a thickness in a range of about 10 nm to about 1000 nm (and preferably in a range of about 50 nm to about 120 nm), disposed thereon. | 07-08-2010 |
| 20100208237 | POLYMERIC SUBSTRATES FOR RAMAN SPECTROSCOPY - The present invention generally provides substrates for use in a variety of analytical and/or diagnostic applications as well as optical systems that employ them, in particular systems based on surface enhanced Raman spectroscopy (SERS). In one aspect, the invention provides polymeric substrates having conductive surfaces that exhibit micron-sized, and preferably submicron-sized, structures. In other aspects, methods for fabricating such substrates are disclosed, including a step of irradiating a mold surface with a plurality of short laser pulses to form micron-sized or submicron-sized structures and the mold surface and generating the polymeric substrate by replication from the mold surface. | 08-19-2010 |
| 20100240203 | SILICON-BASED VISIBLE AND NEAR-INFRARED OPTOELECTRIC DEVICES - In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns. | 09-23-2010 |
| 20110031471 | Laser-Induced Structuring of Substrate Surfaces - In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods. | 02-10-2011 |
| 20110045244 | ENGINEERING FLAT SURFACES ON MATERIALS DOPED VIA PULSED LASER IRRADIATION - Methods and apparatus for processing a substrate (e.g., a semiconductor substrate) is disclosed that includes irradiating at least a portion of the substrate surface with a plurality of short radiation pulses while the surface portion is exposed to a dopant compound. The pulses are selected to have a fluence at the substrate surface that is greater than a melting fluence threshold (a minimum fluence needed for the radiation pulse to cause substrate melting) and less than an ablation fluence threshold (a minimum fluence needed for the radiation pulse to cause substrate ablation). In this manner a quantity of the dopant can be incorporated into the substrate while ensuring that the roughness of the substrate's surface is significantly less than the wavelength of the plied radiation pulses. | 02-24-2011 |
| 20110100441 | MULTIJUNCTION PHOTOVOLTAIC DEVICE - Photovoltaic devices (e.g., solar cells) are disclosed that include at least three radiation absorbing layers, each capable of absorbing radiation over a different wavelength range of the solar radiation spectrum. Any two of these three wavelength ranges can be partially overlapping, or alternatively they can be distinct. The layers are disposed relative to one another so as to form two junctions, each of which includes a depletion region. In some cases, the radiation absorbing layers can collectively absorb radiation over a wavelength range that spans at least about 60%, or 70%, or 80%, and preferably 90% of the solar radiation wavelength spectrum. By way of example, in some embodiments, one layer can exhibit significant absorption of solar radiation (e.g., it can absorb at least one radiation wavelength at an absorptance greater than about 90%) at wavelengths less than about 0.7 microns while another layer can exhibit significant absorption of the solar radiation at wavelengths in a range of about 0.7 microns to about 1 micron. The third layer can in turn exhibit a significant absorption of solar radiation at wavelengths greater than about 1 micron. | 05-05-2011 |
| 20110121206 | FEMTOSECOND LASER-INDUCED FORMATION OF SUBMICROMETER SPIKES ON A SEMICONDUCTOR SUBSTRATE - The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface. | 05-26-2011 |
| 20110155649 | NANOPARTICLE SEPARATION USING COHERENT ANTI-STOKES RAMAN SCATTERING - The invention provides methods and systems for separating particles that exhibit different Raman characteristics. The method can include introducing nanoparticles, on which Raman-active molecules are adsorbed, into a photopolymerizable resin and exposing to excite Raman active vibrational modes of the molecules to generate Raman-shifted radiation suitable for polymerizing the resin such that the Raman-shifted radiation causes selective polymerization of a resin surrounding nanoparticles if the nanoparticles provide a Raman enhancement factor greater than a threshold. In addition, methods for electrically isolating nanoparticles, or selectively removing one type of nanoparticles from collections, are disclosed. These methods rely on generation of blue-shifted anti-Stokes photons to selectively expose portions of a photoresist covering the nanoparticles to those photons. Such exposure can cause a change in the exposed portions (e.g., polymerize or increase solubility to a developing agent), which can be employed to achieve isolation of the nanoparticles or their selective removal. | 06-30-2011 |
