| Patent application number | Description | Published |
|---|
| 20090041951 | MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA - A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma. | 02-12-2009 |
| 20090245984 | HIGH THROUGHPUT CLEANER CHAMBER - A wafer cleaning chamber comprising a plurality of carrier arms each having concentrically-mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically-mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner under control of a program containing a velocity profile. At least one cleaning chemical-supply head is positioned proximate to a path of the wafer carriers. | 10-01-2009 |
| 20100124822 | APPARATUSES FOR ADJUSTING ELECTRODE GAP IN CAPACITIVELY-COUPLED RF PLASMA REACTOR - A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall. | 05-20-2010 |
| 20100159707 | GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES - A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas. | 06-24-2010 |
| 20110200415 | SUBSTRATE LOAD AND UNLOAD MECHANISMS FOR HIGH THROUGHPUT - In various exemplary embodiments described herein, a system includes a plurality of carrier arms each having concentrically mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner. A linear wafer transport mechanism moves wafers to or from select ones of the wafer carriers on the plurality of carrier arms to an easy handoff location for a load/unload robot. | 08-18-2011 |
| 20110232771 | AIRFLOW MANAGEMENT FOR LOW PARTICULATE COUNT IN A PROCESS TOOL - In various exemplary embodiments described herein, a system and related method to provide airflow management system in a substrate production tool includes a housing to couple the substrate production tool to a fan filter unit to provide filtered air to the housing, a facility connection to couple the substrate production tool to a reduced pressure exhaust mechanism, a substrate transfer section coupled below the housing and in airflow communication with the facility connection, and a substrate process area coupled to the substrate transfer section by one or more substrate transfer slots. A chamber substantially containing the substrate transfer section and the substrate process area is coupled to the housing to receive the filtered air and to the facility connection to provide an exhaust for excess gas flow. The chamber maintains a low pressure in the substrate process area relative to the substrate transfer section. | 09-29-2011 |
| 20110236159 | REDUCTION OF PARTICLE CONTAMINATION PRODUCED BY MOVING MECHANISMS IN A PROCESS TOOL - In various exemplary embodiments described herein, a system and related method to reduce particle contamination on substrates is disclosed. The system includes a substrate traverser mechanism having tracks to transport substrate carriers with one or more traverser ducts arranged to surround, at least partially, the tracks. The one or more ducts have slits along at least a substantial portion of a length of the tracks. A traverser exhaust fan is coupled to one end of each of the one or more traverser ducts. The fan provides sufficient volumetric airflow such that a velocity of the volumetric airflow through the slits is greater than a terminal settling velocity of a predetermined particle size. The fan draws particles less than approximately the predetermined particle size generated by the substrate traverser mechanism into the one or more traverser ducts. | 09-29-2011 |
| 20110281435 | FAST GAS SWITCHING PLASMA PROCESSING APPARATUS - A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power. | 11-17-2011 |
