| Patent application number | Description | Published |
|---|
| 20090025840 | Cu-Ni-Si-Co-Cr Copper Alloy for Electronic Materials and Method for Manufacturing Same - The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm | 01-29-2009 |
| 20090035174 | Copper Alloy for Electronic Materials - The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2. | 02-05-2009 |
| 20090301614 | CU-NI-SI-CO COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME - The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction. | 12-10-2009 |
| 20100086435 | Cu-Ni-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS - An object of the present invention is to provide a Corson alloy having significantly improved characteristics, i.e. high strength and high electrical conductivity, by enhancing the effect of addition of Cr to a Cu—Ni—Si system alloy. There is provided a copper alloy for electronic materials comprising 1.0-4.5% by mass Ni, 0.50-1.2% by mass Si, 0.003-0.3% by mass Cr wherein the weight ratio of Ni to Si satisfies the expression: 3≦Ni/Si≦5.5, and the balance being Cu and incidental impurities, wherein particles of Cr—Si compounds having a size of 0.1 μm to 5 μm are dispersed in the alloy and the dispersed particles having an atomic concentration ratio of Cr to Si of 1 to 5 and a dispersion density of no more than 1×10 | 04-08-2010 |
| 20110027122 | Cu-Ni-Si-Co-Cr System Alloy for Electronic Materials - The problem to be solved by the present invention is to provide a significant improvement in the properties in Cu—Ni—Co—Si alloy by adding Cr, i.e., to provide Corson alloys having high strength and high electrical conductivity. There is provided a copper alloy for electronic materials comprising 1.0 to 4.5 mass % of Ni, 0.50 to 1.2 mass % of Si, 0.1 to 2.5 mass % of Co, 0.003 to 0.3 mass % of Cr, with the balance being Cu and unavoidable impurities, the mass concentration ratio of the total mass of Ni and Co to Si ([Ni+Co]/Si ratio) satisfies the formula: 4≦[Ni+Co]/Si≦5, and with regard to Cr—Si compound whose size is 0.1 to 5 μm dispersed in the material, atomic concentration ratio of Cr to Si in the dispersed particle is 1-5, and area dispersion density thereof is more than 1×10 | 02-03-2011 |
| Patent application number | Description | Published |
|---|
| 20080223840 | Squeezing detection control method for consumable electrode arc welding - A squeezing detection control method is provided for consumable electrode arc welding. The method includes a step of detecting a droplet squeezing phenomenon by checking that a change in a voltage or resistance between the consumable electrode and base material reaches a squeezing detection reference value, and a step of executing output control for rapidly decreasing a welding current passing through a short-circuited load when the squeezing phenomenon is detected, so that arc re-striking occurs in a state of low current. The squeezing detection reference value is set to a first value during the electrode positive polarity, and set to a second value during the electrode negative polarity. The second value is different from the absolute value of the first value, and each of the first and the second values is set such that the resultant welding state is satisfactory. (FIG . | 09-18-2008 |
| 20080237208 | Feed control method for consumable electrode AC arc welding - A feed control method is provided for consumable electrode AC arc welding, in which the welding wire is fed at a predetermined wire feed rate, and a welding voltage applied to an arc is switched in alternation between electrode positive polarity and electrode negative polarity. In the method, a welding current setting signal is generated, and the wire feed rate is set to a first feed rate during a period of the electrode positive polarity, based on both the wire welding characteristics for the electrode positive polarity and the welding current setting signal. Further, the wire feed rate is set to a second feed rate during a period of the electrode negative polarity, based on both the wire welding characteristics for the electrode negative polarity and the welding current setting signal. | 10-02-2008 |
| 20090032513 | Arc welding power source - An arc welding power source supplies a start current, a welding current and a crater current as an output current in accordance with an activating signal supplied from outside. The power source includes a start period setting unit, a crater period setting unit, and a current control unit that controls the output current. The current control unit causes the power source to supply the start current and the welding current consecutively while the activating signal is in an on-state, where the start current is supplied for the start period, and the welding current is supplied for the period following the start period. The current control unit also causes the power source to supply the crater current after the activating signal is turned off, where the crater current is supplied for the crater period. | 02-05-2009 |
