Epler
John Epler, San Jose, CA US
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20100019260 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A WINDOW LAYER AND A LIGHT-DIRECTING STRUCTURE - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is disposed between a window layer and a light-directing structure. The light-directing structure is configured to direct light toward the window layer; examples of suitable light-directing structures include a porous semiconductor layer and a photonic crystal. An n-contact is electrically connected to the n-type region and a p-contact is electrically connected to the p-type region. The p-contact is disposed in an opening formed in the semiconductor structure. | 01-28-2010 |
John Epler, Milpitas, CA US
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20080308824 | Thin Flash or Video Recording Light Using Low Profile Side Emitting LED - Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras. | 12-18-2008 |
20100207157 | LED ASSEMBLY HAVING MAXIMUM METAL SUPPORT FOR LASER LIFT-OFF OF GROWTH SUBSTRATE - Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount. | 08-19-2010 |
20110084301 | PACKAGE-INTEGRATED THIN FILM LED - LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency. | 04-14-2011 |
John E. Epler, Milpitas, CA US
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20080237619 | LED with Porous Diffusing Reflector - In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described. | 10-02-2008 |
20110027975 | SUBSTRATE FOR GROWING A III-V LIGHT EMITTING DEVICE - A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer. | 02-03-2011 |
John Edward Epler, Eindhoven NL
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20150115299 | III-NITRIDE LIGHT EMITTING DEVICE - A device includes a substrate ( | 04-30-2015 |
John Edward Epler, San Jose, CA US
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20130244364 | METHOD OF FORMING A COMPOSITE SUBSTRATE - In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(| | 09-19-2013 |
20140034990 | III-V LIGHT EMITTING DEVICE WITH THIN N-TYPE REGION - A device includes a semiconductor structure comprising a III-phosphide light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive oxide is disposed in direct contact with the n-type region. In some embodiments, a total thickness of semiconductor material between the light emitting layer and the transparent, conductive oxide is less than one micron. | 02-06-2014 |
20140193931 | METHOD OF BONDING A SUBSTRATE TO A SEMICONDUCTOR LIGHT EMITTING DEVICE - A method according to embodiments of the invention includes positioning a flexible film ( | 07-10-2014 |
20140264430 | P-CONTACT WITH MORE UNIFORM INJECTION AND LOWER OPTICAL LOSS - The current distribution across the p-layer ( | 09-18-2014 |
20150155437 | LIGHT EXTRACTION USING FEATURE SIZE AND SHAPE CONTROL IN LED SURFACE ROUGHENING - The structural characteristics of the light-exiting surface of a light emitting device ( | 06-04-2015 |
John Edward Epler, Milpitas, CA US
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20130313562 | PACKAGE-INTEGRATED THIN FILM LED - LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency. | 11-28-2013 |
Michael Raymond Epler, Simi Valley, CA US
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20150269545 | AUTOMATED BUDGETED TRANSFER PROCESS FOR LINKED ACCOUNTS - Embodiments for linking accounts and transferring funds between linked accounts include system for receiving financial account data and identifying at least one funding account and one or more receiving accounts from the account data. The systems determine a mapping strategy for linking the at least one funding account and one or more receiving accounts and link the at least one funding account and the one or more receiving accounts according to the mapping strategy. The systems further set parameters and execute a transfer of funds between the linked accounts in accordance with the parameters. | 09-24-2015 |
Sarah Epler, Brooklyn, NY US
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20140079371 | Video Editing Method and Tool - A computer-implemented method is provided for capturing one or more image frames of a real-time streaming video using a wrapper module configured to function with a video player. The wrapper module is in electronic communication with a server. The method includes receiving, by the wrapper module, during streaming of the video by the video player, an indication from a user of a current viewing location in the video to initiate image capturing. The method includes capturing, by the wrapper module, one or more image frames from the video based on the indication of the current viewing location. The method also includes transmitting, by the wrapper module, the one or more captured image frames to the server. | 03-20-2014 |