| Patent application number | Description | Published |
|---|
| 20100084013 | SOLAR CELL - A solar cell is disclosed. The solar cell includes an n-type or p-type amorphous silicon layer, a transparent electrode, and a metal buffer layer between the transparent electrode and the amorphous silicon layer. The metal buffer layer contains at least one of In, Sn, B, Al, Ga, and Zn. When the transparent electrode contains indium tin oxide (ITO), the metal buffer layer contains at least one of In and Sn. When the transparent electrode contains zinc oxide, the metal buffer layer contains at least one of B, Al, Ga, and Zn. | 04-08-2010 |
| 20100132792 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate, at least one emitter layer on the substrate, at least one first electrode electrically connected to the at least one emitter layer, and at least one second electrode electrically connected to the substrate. At least one of the first electrode and the second electrode is formed using a plating method. | 06-03-2010 |
| 20100212739 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell and a method of manufacturing the same are discussed. The solar cell includes an amorphous silicon layer, and a density of Si—Si bonds in the amorphous silicon layer is 7.48×10 | 08-26-2010 |
| 20110041901 | SOLAR CELL - A solar cell is disclosed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and a photoelectric transformation unit between the first electrode and the second electrode. The photoelectric transformation unit includes a first intrinsic (referred to as an i-type) semiconductor layer formed of amorphous silicon doped with at least one of carbon (C) and oxygen (O) as impurities and a second i-type semiconductor layer formed of germanium (Ge)-doped microcrystalline silicon. | 02-24-2011 |
| 20110079264 | SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME - A solar cell module and a method for manufacturing the same are discussed. The solar cell module includes a substrate including an electricity generation area and an edge area that are divided by an insulating area, and a plurality of solar cells positioned in the electricity generation area. Each of the solar cells includes a transparent electrode on the substrate, a silicon electricity generation layer on the transparent electrode, and a back electrode on the silicon electricity generation layer. The back electrode of one solar cell is electrically connected to the transparent electrode of another solar cell adjacent to the one solar cell. A side of a transparent electrode of an outermost solar cell adjacent to the insulating area is covered by a side portion of a silicon electricity generation layer of the outermost solar cell exposed in the insulating area. | 04-07-2011 |
| 20110100414 | THIN FILM SOLAR CELL MODULE - A thin film solar cell module is disclosed. The thin film solar cell module includes a substrate and a plurality of cells each including a first electrode positioned on the substrate, a second electrode positioned on the first electrode, and a photoelectric transformation layer positioned between the first electrode and the second electrode. The plurality of cells are divided into a first group and a second group. A plurality of cells included in the first group are electrically connected in series to one another, and a plurality of cells included in the second group are electrically connected in series to one another. The first group and the second group are connected in parallel to each other using a lead wire. The lead wire is positioned on both the first group and the second group. | 05-05-2011 |
| 20110186122 | SOLAR CELL - A solar cell is discussed. The solar cell includes a substrate, a photoelectric transformation unit including at least one semiconductor layer, a transparent electrode positioned between the substrate and the photoelectric transformation unit, and a buffer layer positioned between the transparent electrode and the substrate. The photoelectric transformation unit includes at least one p-type semiconductor layer, at least one n-type semiconductor layer, and at least one i-type semiconductor layer. | 08-04-2011 |
