Patent application number | Description | Published |
20090149438 | Pyrimidines as PLK inhibitors - The present invention encompasses compounds of general formula (1), | 06-11-2009 |
20090163465 | Pyrimidines as PLK inhibitors - The present invention encompasses compounds of general formula (1), | 06-25-2009 |
20090203673 | 4-HETEROCYCLOALKYLPYRI(MI)DINES, PROCESS FOR THE PREPARATION THEREOF AND THEIR USE AS MEDICAMENTS - The present invention encompasses compounds of general Formula (I) wherein X and R | 08-13-2009 |
20090306067 | 2, 4-DIAMINOPYRIMIDIDE DERIVATES AND THEIR USE FOR THE TREATMENT OF CANCER - The present invention encompasses compounds of general formula (1) wherein Q and R | 12-10-2009 |
20100222331 | NEW COMPOUNDS - The present invention encompasses compounds of general Formula (1) wherein R | 09-02-2010 |
20110086842 | Pyrimidines as PLK inhibitors - The present invention encompasses compounds of general formula (1), | 04-14-2011 |
20110201608 | SUBSTITUTED NAPHTHYRIDINES AND USE THEREOF AS MEDICINES - The invention relates to new substituted naphthyridines of formula 1, as well as pharmacologically acceptable salts, diastereomers, enantiomers, racemates, hydrates or solvates thereof, | 08-18-2011 |
20110251174 | 2,4-DIAMINO-PYRIMIDINES AS AURORA INHIBITORS - The present invention encompasses compounds of general formula (1) | 10-13-2011 |
20110269958 | PYRIDONS AS PDK1 INHIBITORS - The present invention encompasses compounds of general formula (1) while the groups R | 11-03-2011 |
20110313156 | HETEROCYCLYL CARBONIC ACID AMIDES AS ANTIPROLIFERATIVE AGENTS, PDKL INHIBITORS - The present invention encompasses compounds of general formula (1) wherein the units W, A, L, Q | 12-22-2011 |
20120094976 | NEW CHEMICAL COMPOUNDS - The present invention encompasses compounds of general formula (1) | 04-19-2012 |
20130210832 | 1H-IMIDAZO[4,5-C]QUINOLINES - The present invention encompasses compounds of general formula (1), wherein the groups R | 08-15-2013 |
20130281429 | 2,4-DIAMINO-PYRIMIDINES AS AURORA INHIBITORS - The present invention encompasses compounds of general formula (1) | 10-24-2013 |
20140135336 | TRIAZOLOPYRIDAZINE - Disclosed are compounds of general formula (I) | 05-15-2014 |
20140142098 | TRIAZOLOPYRAZINE - Disclosed are compounds of the formula (I) | 05-22-2014 |
20140296229 | INDOLINONE ANALOGUES - The present invention encompasses compounds of general formula (I) | 10-02-2014 |
20140296230 | DIHYDROQUINAZOLINONE ANALOGUES - The present invention encompasses compounds of general formula (I) | 10-02-2014 |
20150051208 | PYRIDINONES - The present invention encompasses compounds of general formula (I) | 02-19-2015 |
Patent application number | Description | Published |
20110217839 | Interconnect arrangement and associated production methods - An interconnect arrangement and fabrication method are described. The interconnect arrangement includes an electrically conductive mount substrate, a dielectric layer formed on the mount substrate, and an electrically conductive interconnect formed on the dielectric layer. At least a portion of the dielectric layer under the interconnect contains a cavity. To fabricate the interconnect arrangement, a sacrificial layer is formed on the mount substrate and the interconnect layer is formed on the sacrificial layer. The interconnect layer and the sacrificial layer are structured to produce a structured interconnect on the structured sacrificial layer. A porous dielectric layer is formed on a surface of the mount substrate and of the structured interconnect as well as the sacrificial layer. The sacrificial layer is then removed to form the cavity under the interconnect. | 09-08-2011 |
20110309479 | Plasma Dicing and Semiconductor Devices Formed Thereof - In one embodiment, a method of forming a semiconductor device includes forming islands by forming deep trenches within scribe lines of a substrate. The islands have a first notch disposed on sidewalls of the islands. A first electrode stack is formed over a top surface of the islands. The back surface of the substrate is thinned to separate the islands. A second electrode stack is formed over a back surface of the islands. | 12-22-2011 |
20120181640 | Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof - In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate. | 07-19-2012 |
20120322267 | METHOD OF PATTERNING A SUBSTRATE - In various embodiments, a method of patterning a substrate may include: forming an auxiliary layer on or above a substrate and forming a plasma etch mask layer on or above the auxiliary layer, wherein the auxiliary layer is configured such that it may be removed from the substrate more easily than the plasma etch mask layer; patterning the plasma etch mask layer and the auxiliary layer such that at least a portion of the substrate is exposed; patterning the substrate by means of a plasma etch process using the patterned plasma etch mask layer as a plasma etch mask. | 12-20-2012 |
20130098390 | DEVICE FOR PROCESSING A CARRIER AND A METHOD FOR PROCESSING A CARRIER - Various embodiments provide a device for processing a carrier, the device including: a carrier receiving portion configured to receive a carrier, the carrier including one or more planar regions and one or more edge regions; a processing portion including: a first electrode; a second electrode, wherein the second electrode is separated from the first electrode; and a dielectric material formed between the first electrode and the second electrode; and wherein the first electrode is configured to receive a first potential and the second electrode is configured to received a second potential to activate supplied gas between the first electrode and the second electrode; wherein the first electrode and the second electrode are arranged to direct more supplied activated gas to the one or more edge regions than to the one or more planar regions of the carrier. | 04-25-2013 |
20130109171 | Method for etching substrate | 05-02-2013 |
20130115736 | METHOD FOR SEPARATING A PLURALITY OF DIES AND A PROCESSING DEVICE FOR SEPARATING A PLURALITY OF DIES - A method for separating a plurality of dies is provided. The method may include: selectively removing one or more portions from a carrier including a plurality of dies, for separating the plurality of dies along the selectively removed one or more portions, wherein the one or more portions are located between the dies; and subsequently forming over a back side of the dies, at least one metallization layer for packaging the dies | 05-09-2013 |
20130115755 | METHOD OF SEPARATING SEMICONDUCTOR DIE USING MATERIAL MODIFICATION - A method for separating semiconductor die includes forming a porous region on a semiconductor wafer and separating the die at the porous region using mechanical or other means. | 05-09-2013 |
20130115757 | METHOD FOR SEPARATING A PLURALITY OF DIES AND A PROCESSING DEVICE FOR SEPARATING A PLURALITY OF DIES - A method for separating a plurality of dies is provided, the method including: defining one or more portions to be removed from a carrier including a plurality of dies by chemically changing the properties of the one or more portions to be removed located between the dies; performing a front-end-of-line FEOL process on at least one die to form at least one semiconductor device; and selectively removing the one or more portions of the carrier whose properties were chemically changed for separating the dies along the removed one or more portions. | 05-09-2013 |
20130115771 | Method of making semiconductor device - One or more embodiments may include a method of making a semiconductor structure, comprising: forming a first opening partially through a semiconductor substrate; forming a first dielectric layer over a sidewall surface of the first opening; and forming a second opening partially through a semiconductor substrate, the second opening being below the first opening. | 05-09-2013 |
20130137273 | Semiconductor Processing System - The semiconductor processing system includes a reactor chamber that has an upper wall and a lower wall. A hold member is disposed in the reactor chamber to hold a semiconductor substrate in such a way that it faces the lower wall of the reactor chamber. | 05-30-2013 |
20130189830 | Methods of Forming Semiconductor Devices - In accordance with an embodiment of the present invention, a method of fabricating a semiconductor device includes forming a trench from a top surface of a substrate having a device region. The device region is adjacent to the top surface than an opposite bottom surface. The trench surrounds the sidewalls of the device region. The trench is filled with an adhesive. An adhesive layer is formed over the top surface of the substrate. A carrier is attached with the adhesive layer. The substrate is thinned from the bottom surface to expose at least a portion of the adhesive and a back surface of the device region. The adhesive layer is removed and adhesive is etched to expose a sidewall of the device region. | 07-25-2013 |
20130313719 | CHIP PACKAGES AND METHODS FOR MANUFACTURING A CHIP PACKAGE - A method for manufacturing a chip package is provided. The method including: holding a carrier including a plurality of dies; forming a separation between the plurality of dies by removing from the carrier one or more portions of the carrier between the plurality of dies; forming an encapsulation material in the removed one or more portions between the plurality of dies; separating the dies through the encapsulation material. | 11-28-2013 |
20130328195 | UTILIZATION OF A METALLIZATION SCHEME AS AN ETCHING MASK - The various aspects comprise methods and devices for processing a wafer. | 12-12-2013 |
20140151854 | Method for Separating a Layer and a Chip Formed on a Layer - A method for separating a layer from a substrate. The method includes providing a plurality of trenches extending from a first main surface of the substrate into the substrate. A heat treatment of the substrate is performed such that edges of the trenches grow together at the first main surface to form a closed layer at the first main surface, wherein lower portions of the trenches form one or more cavities within the substrate. After that the closed layer is separated from the substrate along the one or more cavities. | 06-05-2014 |
20140167192 | Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof - In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate. | 06-19-2014 |
20140291779 | Semiconductor Devices and Methods for Manufacturing Semiconductor Devices - A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the second time duration is greater than the first time duration. | 10-02-2014 |
20140327003 | Removable indicator structure in electronic chips of a common substrate for process adjustment - A method of processing a plurality of packaged electronic chips being connected to one another in a common substrate is provided, wherein the method comprises etching the electronic chips, detecting information indicative of an at least partial removal of an indicator structure following an exposure of the indicator structure embedded within at least a part of the electronic chips and being exposed after the etching has removed chip material above the indicator structure, and adjusting the processing upon detecting the information indicative of the at least partial removal of the indicator structure. | 11-06-2014 |
20150044856 | METHOD OF SEPARATING SEMICONDUCTOR DIE USING MATERIAL MODIFICATION - A method for separating semiconductor die includes forming a porous region on a semiconductor wafer and separating the die at the porous region using mechanical or other means. | 02-12-2015 |
20150064879 | Separation of Chips on a Substrate - Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts. | 03-05-2015 |
20150108666 | Thinning in package using separation structure as stop - A method of forming a thinned encapsulated chip structure, wherein the method comprises providing a separation structure arranged within an electronic chip, encapsulating part of the electronic chip by an encapsulating structure, and thinning selectively the electronic chip partially encapsulated by the encapsulating structure so that the encapsulating structure remains with a larger thickness than the thinned electronic chip, wherein the separation structure functions as a thinning stop. | 04-23-2015 |
Patent application number | Description | Published |
20080318311 | Encapsulated Bacteriophage Formulation - An encapsulated bacteriophage formulation and a method for preparing encapsulated bacteriophage formulation is provided. The method for producing the encapsulated bacteriophage composition involves injection of a molten coating substance comprising stearic acid and palmitic acid present at a ratio of 50:50, into a granulator chamber containing immobilized bacterio-phages. The immobilized bacteriophage are agitated by rotation of a base of the chamber and swept by a flow of air at a temperature of between 10° C. and 50° C. | 12-25-2008 |
20090130196 | Bacteriophage composition - Bacteriophage compositions, and methods for preparing bacteriophage compositions are provided. The method for producing an antibacterial composition involves adsorbing an aqueous solution of one or more bacteriophages, or one or more phage components, onto a matrix to produce a composition, and drying the composition to produce the antibacterial composition. An antibacterial composition comprising one or more strain of bacteriophage, or one or more phage component, adsorbed onto a matrix is also provided. The antibacterial composition may also be encapsulated. The antibacterial composition, or the encapsulated antibacterial composition, may be used within a cream, lotion or gel, be admixed with a pharmaceutical carrier and administered topically, orally, nasally, used as a powdered inhalant, or the antibacterial composition or encapsulated antibacterial composition, may be added to a feed for animal, aquatic or avian uses. | 05-21-2009 |
20120258175 | ENCAPSULATED BACTERIOPHAGE FORMULATION - An encapsulated bacteriophage formulation and a method for preparing encapsulated bacteriophage formulation is provided. The method for producing the encapsulated bacteriophage composition involves injection of a molten coating substance comprising stearic acid and palmitic acid present at a ratio of 50:50, into a granulator chamber containing immobilized bacteriophages. The immobilized bacteriophage are agitated by rotation of a base of the chamber and swept by a flow of air at a temperature of between 10° C. and 50° C. | 10-11-2012 |