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En
Honjin En, Ibi-Gun JP
| Patent application number | Description | Published |
|---|---|---|
| 20090173523 | MULTILAYER BUILD-UP WIRING BOARD - Mesh holes | 07-09-2009 |
Kenpei En, Gunma-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100111123 | DRIVER CIRCUIT OF LIGHT-EMITTING ELEMENT - A driver circuit is provided which comprises a series-connected unit having a light-emitting element and a current limiting inductor directly connected to the light-emitting element, a regenerative diode which is connected in parallel to the series-connected unit and which regenerates energy stored in the current limiting inductor, a transistor which controls a current flowing through the light-emitting element and the current limiting inductor, and a controller which controls an operation of the transistor, wherein the controller controls the transistor according to a voltage value of a power supply applied to the light-emitting element. | 05-06-2010 |
Lu Cheng En, Beijing CN
| Patent application number | Description | Published |
|---|---|---|
| 20120005192 | METHOD AND APPARATUS FOR ENHANCING WEBPAGE BROWSING - The present invention provides a method and apparatus for enhancing webpage browsing. The method of the invention includes a predicting step which predicts, for a first block in the webpage, a subsequent second block, based on a browsing history of blocks of webpages by at least one user; and a link generating step of automatically generating a link pointing to the second block based on a result of the predicting step. The apparatus includes: predicting means configured to predict, for a first block in the webpage, a subsequent second block, based on a browsing history of blocks of web pages by at least one user; and link generating means configured to automatically generate a link pointing to the second block based on a result of the predicting means. | 01-05-2012 |
William G. En, Milpitas, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080206963 | Cleaving process to fabricate multilayered substrates using low implantation doses - A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner. | 08-28-2008 |
| 20090032888 | SEMICONDUCTOR DEVICE - A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process. | 02-05-2009 |