| Patent application number | Description | Published |
|---|
| 20100002358 | HIGH-STABILITY THIN-FILM CAPACITOR AND METHOD FOR MAKING THE SAME - The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses d | 01-07-2010 |
| 20100072057 | PROCESS FOR FORMING A CERAMIC OXIDE MATERIAL WITH A PYROCHLORE STRUCTURE HAVING A HIGH DIELECTRIC CONSTANT AND IMPLEMENTATION OF THIS PROCESS FOR APPLICATIONS IN MICROELECTRONICS - The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits. | 03-25-2010 |
| 20110061215 | PROCESS FOR FABRICATING AN OPTIMALLY-ACTUATING PIEZOELECTRIC MEMBRANE - In a process for fabricating a membrane, including, on a substrate, a thin-film multilayer including a film of piezoelectric material placed between a top electrode film and a bottom electrode film and an elastic film supporting said piezoelectric film, the process includes: determining at least one concavity/convexity curvature of said membrane along an axis parallel to the plane of the films so that at least one inflection point is defined, said point allowing a first region and a second region, corresponding to a concave part and a convex part or vice versa, to be isolated; depositing, on the surface of the substrate, a thin-film multilayer including at least one film of piezoelectric material, one bottom electrode film and one top electrode film; and structuring at least one of the electrode films to define at least said first membrane region, in which an electric field perpendicular to the plane of the films may be applied, and at least said second region, in which an electric field parallel to the plane of the films may be applied. | 03-17-2011 |
| 20110072901 | DEVICE AND METHOD FOR DETECTING ELEMENTS IN A FLUID ENVIRONMENT - The device for detecting elements in a fluidic medium comprises at least one acoustic resonator having a surface intended for fixing the elements. The resonator includes means for generating and measuring Lamb waves, favouring the generation of symmetrical Lamb waves. The device analyses the resonant frequency of the resonator in order to determine the variation in the resonant frequency of the symmetrical Lamb waves representative of the presence of the elements. | 03-31-2011 |
| 20110080069 | PIEZOELECTRIC ACTUATION STRUCTURE INCLUDING AN INTEGRATED PIEZORESISTIVE STRAIN GAUGE AND ITS PRODUCTION METHOD - The invention relates to a piezoelectric actuation structure including at least one strain gauge and at least one actuator produced from a stack on the surface of a substrate of at least one layer of piezoelectric material arranged between a bottom electrode layer and a top electrode layer, at least a portion of the stack forming the actuator being arranged above a cavity produced in the substrate, characterized in that the strain gauge is a piezoresistive gauge located in the top electrode layer and/or the bottom electrode layer, the layer or layers including electrode discontinuities making it possible to produce said piezoresistive gauge. The invention also relates to a method for producing such a structure. | 04-07-2011 |
