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Ema, JP
Hidetoshi Ema, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090046784 | Differential signal output device - A differential signal output device is disclosed that outputs transmission data as a differential signal. The device includes a first differential signal generation circuit that amplifies a signal representing the transmission data and generates the differential signal from the amplified signal; a dummy data generation circuit that is synchronized with a reference clock of the transmission data and generates dummy data that change only in a bit where the transmission data do not change; and a second differential signal generation circuit that amplifies a signal representing the dummy data and generates another differential signal from the amplified signal. | 02-19-2009 |
Hiromichi Ema, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080240799 | DESKTOP COLOR IMAGE FORMING APPARATUS AND METHOD OF MAKING THE SAME - The present invention relates to an electrophotographic color image forming apparatus using a tandem-drum development, an indirect image-transfer method, and a vertical sheet supply path. An intermediate image-transfer member is angled relative to a horizontal line such that a rear side of the intermediate image-transfer member away from a recording sheet is lifted and a front side of the intermediate image-transfer member closer to the recording sheet is lowered. Further, image creating mechanisms of the tandem-drum development are aligned and arranged in parallel to a moving image transfer bed of the intermediate image-transfer member, such that one of the image creating mechanisms firstly forming an image faces the rear side of the moving image transfer bed and another one of the image creating mechanisms lastly forming an image faces the front side. | 10-02-2008 |
Hiroshi Ema, Yao-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100259502 | LIQUID CRYSTAL DISPLAY UNIT - The present invention aims to achieve a high display quality and cost saving while providing a dual function as a capacitive touch panel. | 10-14-2010 |
Kiyomi Ema, Toyama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090032994 | Method for Manufacturing Slurry and Mold for Precision Casting - A manufacturing method for a slurry for the production of a precision casting mold that includes a zirconia sol and a refractory powder, and a manufacturing method for a precision casting mold that uses the slurry is provided. The present invention relates to a manufacturing method for a slurry for the production of a precision casting mold for a metal that includes a step in which an alkaline zirconia sol (A1) and a refractory powder (D) are mixed, the alkaline zirconia sol (A1) being obtained by a manufacturing method that includes a step (i), in which a zirconium salt (B1) is heated at 60 to 110° C. in an aqueous medium that includes a carbonate of quaternary ammonium, and a step (ii), in which a hydrothermal treatment is carried out at 100 to 250° C. In addition, the present invention relates to a manufacturing method for a slurry for the production of a precision casting mold for a metal that includes a step in which an acidic zirconia sol (C3) and a refractory powder (D) are mixed, the acidic zirconia sol (C3) being obtained by a manufacturing method that includes a step (I), in which an alkaline zirconia sol (A3) and a zirconium salt (B3) are mixed, and a step II, in which the obtained liquid mixture is caused to react at 80 to 250° C. | 02-05-2009 |
Mitsuhiro Ema, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090243337 | FRAME WITH CLOSED CROSS-SECTION - There is provided a frame having closed cross-sections capable of preventing a welded joint of the frame from being turned in a wide open state, or being broken when an external force is applied to the frame at the time of vehicle collision, and so forth, and the frame is collapsed. The frame having closed cross-sections is provided with a body cylindrical in shape, wherein first side parts of a first frame member, in pairs, are welded to second side parts of a second frame member, in pairs, respectively, thereby forming a welded joint on both sides of the body, and respective end faces of each of the reinforcing plates, in the widthwise direction of the body, are butted against respective inner side faces of the side parts of the body, corresponding thereto. | 10-01-2009 |
Nobuyuki Ema, Chiba JP
| Patent application number | Description | Published |
|---|---|---|
| 20090239567 | POC SERVER AUTOMATIC SEARCH METHOD, QUALITY ADJUSTMENT METHOD, AND COMMUNICATION SYSTEM USING THESE METHODS - In conventional services for communicating various media, there are limits to the number of users, the number of group lists, and the like that can be handled by servers provided by communication providers. A service system includes a server provider network | 09-24-2009 |
Tadashi Ema, Okayama JP
| Patent application number | Description | Published |
|---|---|---|
| 20100292464 | OPTICAL-ISOMER SEPARATING AGENT FOR CHROMATOGRAPHY AND PROCESS FOR PRODUCING THE SAME - A novel optical-isomer separating agent for chromatography is provided which has, as a chiral selector, a macrocyclic amide compound having the ability to function as a chiral shift agent. The optical-isomer separating agent for chromatography is formed by bonding, with a carrier by chemical bonding, a specific ring structure containing an asymmetry recognition site, an amide group as a hydrogen-bond donor site, and a hydrogen-bond acceptor site. | 11-18-2010 |
| 20120034670 | ORGANIC-INORGANIC COMPOSITE MATERIAL AND PROCESS FOR PRODUCING SAME - Disclosed is an organic-inorganic composite material obtained by chemically modifying a microorganism-derived ceramic material with an organic group, and a process for producing the organic-inorganic composite material. The process is characterized by reacting a microorganism-derived ceramic material with at least one compound selected from the group consisting of silane coupling agents represented by formula (1), silane coupling agents represented by formula (2), and titanate coupling agents represented by formula (3). The organic-inorganic complex can be used in applications for immobilized catalysts and immobilized enzyme catalysts. | 02-09-2012 |
Taiji Ema, Mie-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20120083080 | METHOD FOR REDUCING PUNCH-THROUGH IN A TRANSISTOR DEVICE - Punch-through in a transistor device is reduced by forming a well layer in an implant region, forming a stop layer in the well layer of lesser depth than the well layer, and forming a doped layer in the stop layer of lesser depth than the stop layer. The stop layer has a lower concentration of impurities than the doped layer in order to prevent punch-through without increasing junction leakage. | 04-05-2012 |
| 20120083103 | METHOD FOR MINIMIZING DEFECTS IN A SEMICONDUCTOR SUBSTRATE DUE TO ION IMPLANTATION - Defects in a semiconductor substrate due to ion implantation are minimized by forming an implant region in the semiconductor substrate and subjecting the semiconductor substrate to a first anneal to recrystallize the semiconductor substrate. The semiconductor substrate is subjected to a second anneal to suppress diffusion of implanted ions in the semiconductor substrate. The first anneal being at a lower temperature and longer duration than the second anneal. | 04-05-2012 |
Taiji Ema, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20080280406 | Semiconductor device and its manufacturing method - A semiconductor device manufacturing method includes, forming isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, forming a silicon gate electrode and a silicon resistive element, forming side wall spacers on the gate electrode, heavily doping a first active region with phosphorus and a second active region and the resistive element with p-type impurities by ion implantation, forming salicide block at 500° C. or lower, depositing a metal layer covering the salicide block, and selectively forming metal silicide layers. The method may further includes, forming a thick and a thin gate insulating films, and performing implantation of ions of a first conductivity type not penetrating the thick gate insulating film and oblique implantation of ions of the opposite conductivity type penetrating also the thick gate insulating film before the formation of side wall spacers. | 11-13-2008 |
Taiji Ema, Yokohama JP
| Patent application number | Description | Published |
|---|---|---|
| 20110233735 | SEMICONDUCTOR WAFER AND ITS MANUFACTURE METHOD, AND SEMICONDUCTOR CHIP - A semiconductor wafer includes: a first semiconductor chip area formed with a semiconductor element; a second semiconductor chip area formed with a semiconductor element; and a scribe area sandwiched between the first and second semiconductor chip areas; wherein: the first semiconductor chip area includes a first metal ring surrounding the semiconductor element formed in the first semiconductor chip area; and the metal ring is constituted of a plurality of metal layers including a lower metal layer and an upper metal layer superposed upon the lower metal layer, and the upper metal layer is superposed upon the lower metal layer in such a manner that an outer side wall of the upper metal layer is flush with the outer side wall of the lower metal layer or is at an inner position of the first semiconductor chip area relative to the outer side wall of the lower metal layer. | 09-29-2011 |
| 20120034751 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a flash memory cell in a first region, forming a first electrode of a capacitor in a second region, forming a first silicon oxide film, a silicon nitride film, and a second silicon oxide film in this order as a second insulating film, removing the silicon nitride film and the second silicon oxide film in a partial region of the first electrode, wet-etching a first insulating film and the second insulating film in the third region, forming a second electrode of the capacitor, and etching and removing the first silicon oxide film in the partial region. | 02-09-2012 |
| 20120045875 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: forming first to third gate electrodes in first to third regions, respectively; forming a first mask pattern covering the second region while exposing the first and third regions; forming p-type source drain extensions and p-type pocket regions by ion implantation using the first mask pattern as a mask; forming n-type source drain extensions by ion implantation using the first mask pattern as a mask; forming a second mask pattern covering the first and third regions while exposing the second region; and forming p-type pocket regions by implanting ions of indium into the silicon substrate with the second mask pattern being used as a mask. | 02-23-2012 |
| 20120080754 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a second transistor including a second impurity layer containing boron and carbon, or arsenic or antimony, a second epitaxial layer formed above the second impurity layer, a second gate electrode formed above the second epitaxial layer with a second gate insulating film thinner than the first gate insulating film formed therebetween, and second source/drain regions. | 04-05-2012 |
| 20120080759 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A first transistor includes a first impurity layer of a first conduction type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, a first gate electrode formed above the first gate insulating film, and first source/drain regions of a second conduction type formed in the first epitaxial semiconductor layer and in the semiconductor substrate in the first region. A second transistor includes a second impurity layer of the first conduction type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and being thinner than the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer, a second gate electrode formed above the second gate insulating film, and second source/drain regions of the second conduction type formed in the second epitaxial semiconductor layer and in the semiconductor substrate in the second region. | 04-05-2012 |
| 20120083087 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A protection film is formed on a semiconductor substrate. Impurity ions are implanted into the semiconductor substrate through the protection film. The impurity is activated to form an impurity layer. The protection film is removed after forming the impurity layer. The semiconductor substrate of a surface portion of the impurity layer is removed after removing the protection film. A semiconductor layer is epitaxially grown above the semiconductor substrate after removing the semiconductor substrate of the surface portion of the impurity layer. | 04-05-2012 |
Takehiro Ema, Otawara-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090198123 | MEDICAL IMAGING APPARATUS, ULTRASONIC IMAGING APPARATUS, MAGNETIC RESONANCE IMAGING APPARATUS, MEDICAL IMAGE PROCESSING APPARATUS, AND MEDICAL IMAGE PROCESSING METHOD - A differential-image creating unit creates a three-dimensional image on which an artery is highlighted and a three-dimensional image on which a tumor is highlighted. An image compositing unit combines the three-dimensional images to composite an image. A display control unit displays the composite image on a monitor. Moreover, when compositing an image, the image compositing unit composites the image such that a tumor nutrient blood-flow inside and outside tumor is to be displayed in respective different colors. Furthermore, a blood-flow quantity inside tumor measuring unit calculates a blood-flow quantity inside tumor and a ratio of the blood-flow quantity inside tumor to a tumor volume, and the display control unit displays the blood-flow quantity inside tumor and the ratio of the blood-flow quantity inside tumor to the tumor volume. Accordingly, information that is meaningful for determining malignancy of a tumor can be provided. | 08-06-2009 |
| 20100040200 | MEDICAL IMAGE PROCESSING APPARATUS, ULTRASOUND IMAGING APPARATUS, X-RAY CT (COMPUTED TOMOGRAPHY) APPARATUS, AND METHOD OF PROCESSING MEDICAL IMAGE - A cardiac cavity region specifying part specifies the position of a cardiac cavity region represented in volume data. An image generation plane determining part determines an image generation plane that includes a rotation axis intersecting the cardiac cavity region. With a direction orthogonal to the image generation plane as a view direction, a first image generator generates three-dimensional image data that three-dimensionally represents a region excluding the cardiac cavity region, based on data excluding data included in the cardiac cavity of the volume data. A second image generator generates two-dimensional image data that two-dimensionally represents a region in the image generation plane, based on the data excluding the data included in the cardiac cavity region of the volume data. An image synthesizer synthesizes the three-dimensional image data with the two-dimensional image data. A display controller causes a display to display the synthesized image. | 02-18-2010 |
Tatsuhiko Ema, Kamakura-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110008545 | FILM FORMING METHOD, FILM FORMING APPARATUS, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10 | 01-13-2011 |
| 20110212255 | FILM FORMING METHOD, FILM FORMING APPARATUS, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10 | 09-01-2011 |
Tatsuhiko Ema, Oita-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100143849 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: forming a foundation film on a semiconductor wafer; after forming the foundation film, forming a reaction layer of the semiconductor wafer and the foundation film therebetween; removing the foundation film and leaving the reaction layer on the semiconductor wafer; forming a resist film on the reaction layer; patterning the resist film; and using the patterned resist film as a mask to perform processing on the semiconductor wafer. | 06-10-2010 |
| 20100167213 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: forming a first anti-reflective coating on a semiconductor wafer; forming a second anti-reflective coating on the first anti-reflective coating; forming a resist film on the second anti-reflective coating; selectively exposing the resist film to light; developing the resist film and the anti-reflective coatings after the light exposure; and processing the semiconductor wafer using as a mask a pattern of the resist film obtained by the development. The photosensitizer concentration of the first anti-reflective coating is higher than the photosensitizer concentration of the second anti-reflective coating. | 07-01-2010 |
Tsunetaka Ema, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080247710 | Optical Connector and Optical Fiber Connecting System - An angle type optical connector enables a splicing operation of an optical fiber cable accurately and stably without requiring skilled labor and having a superior on-site installation property. An optical connector is provided with a splicing section for securely supporting an incorporated optical fiber securely supported at a ferrule and an optical fiber of an outside optical fiber cable in an end-abutting condition. The body of the optical connector is provided with a cable holding member able to hold an optical fiber cable. The cable holding member can be set at a temporary position where it makes an optical fiber of the optical fiber cable abut against the incorporated optical fiber at the splicing section in the state holding the optical fiber cable and bends a covered optical fiber of the optical fiber cable between the splicing section and the cable holding member by a pressing force in the lengthwise direction. | 10-09-2008 |
| 20080304795 | Optical Connector and Optical Fiber Connecting System - A straight type optical connector enables a splicing operation of an optical fiber cable accurately and stably without requiring skilled labor and having a superior on-site installation property. An optical connector is provided with a splicing section for securely supporting an incorporated optical fiber securely supported at a ferrule and an optical fiber of an outside optical fiber cable in an end-abutting condition. The body of the optical connector is provided with a cable holding member able to hold an optical fiber cable. The cable holding member can be set at a temporary position where it makes an optical fiber of the optical fiber cable abut against the incorporated optical fiber at the splicing section in the state holding the optical fiber cable and bends a covered optical fiber of the optical fiber cable between the splicing section and the cable holding member by a pressing force in the lengthwise direction. | 12-11-2008 |
Tunetaka Ema, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110116745 | OPTICAL CONNECTOR, AND ASSEMBLING METHOD OF OPTICAL CONNECTOR - An optical connector according to an embodiment of the present invention comprises (a) a ferrule incorporating a short fiber; (b) a mechanical splice having a holding part and a fixing part, and adapted so that the fixing part mechanically fixes the short fiber extending from the ferrule held by the holding part, and an optical fiber in an optical cable to butt the short fiber; (c) an outer housing having a housing part in which the mechanical splice is located, and a pair of flexible arms located on both sides of the housing part, the pair of arms each being provided with a locking claw at a tip; and (d) a jacket fixture for fixing a cable jacket, the jacket fixture being coupled to the mechanical splice so that the cable jacket is inserted therein. | 05-19-2011 |