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Ely K. Tsern, Los Altos US

Ely K. Tsern, Los Altos, CA US

Patent application numberDescriptionPublished
20090063887MEMORY MODULE WITH TERMINATION COMPONENT - A memory component having a first and second interface. The first interface is provided to sample address information in response to a first clock signal. The first interface includes inputs to sample at least two bits of the address information in succession during a clock cycle of the first clock signal. The second interface is provided to sample data in response to a second clock signal, having a frequency that is at least twice the frequency of the first clock signal. The second interface includes inputs to sample at least two bits of data in succession during a clock cycle of the second clock signal.03-05-2009
20090130798Process for Making a Semiconductor System - Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device.05-21-2009
20090138646METHOD AND APPARATUS FOR SIGNALING BETWEEN DEVICES OF A MEMORY SYSTEM - A method and apparatus for signaling between devices of a memory system is provided. In accordance with an embodiment of the invention, one or more of several capabilities are implemented to provide heretofore unattainable levels of important system metrics, for example, high performance and/or low cost. These capabilities relate to timing adjustment capabilities, bit time adjustment capabilities, cycle time selection, use of differential and/or non-differential signaling for bus signals and/or clock signals, use of termination structures on a bus, including integrated termination structures, and active control circuitry to allow adjustment to different characteristic bus impedances and power-state control, including a calibration process to optimize the termination value, use of slew rate control circuitry and transfer characteristic control circuitry in the predriver and driver of transmitter blocks to allow adjustment to different characteristic bus impedances and to allow adjustment for other bus properties, including a calibration process to optimize the such circuitry, and/or provision of a memory component designed to prefetch (preaccess) words that are wider than the width of the data bus so that the memory access bandwidth approximately matches the transfer bandwidth, and memory component able to adjust the size of the prefetch (preaccess) word to accommodate connection to data buses of different width.05-28-2009
20090138747Phase Adjustment Apparatus and Method for a Memory Device Signaling System - Apparatus and methods are disclosed for adjusting phase of data signals to compensate for phase-offset variations between devices during normal operation. The phase of data signals are adjusted individually in each transmit data unit and receive data unit across multiple data slices with a common set of phase vector clock signals and a corresponding clock cycle count signal. The transmission of signal information between a first device (such as a memory controller) and a second device (such as a memory component) occurs without errors even when the accumulated delays between the first device and second device change by a half symbol time interval or more during operation of the system. The apparatus reduces the circuitry required, such as phase-lock-loops, for individually adjusting the phase of each transmit data unit and receive data unit across multiple data slices, which in turn results in reduction in complexity and cost of the system.05-28-2009
20090195497GESTURE-BASED POWER MANAGEMENT OF A WEARABLE PORTABLE ELECTRONIC DEVICE WITH DISPLAY - Methods and systems for providing gesture-based power management for a wearable portable electronic device with display are described. An inertial sensor is calibrated to a reference orientation relative to gravity. Motion of the portable device is tracked with respect to the reference orientation, and the display is enabled when the device is within a viewable range, wherein the viewable range is a predefined rotational angle range in each of x, y, and z axis, to a user based upon a position of the device with respect to the reference orientation. Furthermore, the display is turned off if an object is detected within a predetermined distance of the display for a predetermined amount of time.08-06-2009
20090213670ASYNCHRONOUS, HIGH-BANDWIDTH MEMORY COMPONENT USING CALIBRATED TIMING ELEMENTS - Disclosed herein are embodiments of an asynchronous memory device that use internal delay elements to enable memory access pipelining. In one embodiment, the delay elements are responsive to an input load control signal, and are calibrated with reference to periodically received timing pulses. Different numbers of the delay elements are configured to produce different asynchronous delays and to strobe sequential pipeline elements of the memory device.08-27-2009
20090282189MEMORY CONTROLLER WITH REFRESH LOGIC TO ACCOMODATE LOW-RETENTION STORAGE ROWS IN A MEMORY DEVICE - A memory controller is disclosed that provides refresh control circuitry to generate first refresh commands directed to a first row of storage cells within a memory device at a first rate. The refresh control circuitry generates second refresh commands directed to a second row of storage cells within the memory device at a second rate. Output circuitry outputs the first and second refresh commands to the memory device.11-12-2009
20100046314Memory Device Having a Read Pipeline and a Delay Locked Loop - A memory device having a memory core is described. The memory device includes a clock receiver circuit, a control interface, a data interface, a delay locked loop circuit, a read pipeline circuit and a circuit to provide an internal clock signal. The clock receiver circuit receives an external clock signal. The control interface receives a command that specifies a read operation to the memory device. The data interface transfers data between the memory device and an external set of signal lines. The delay locked loop circuit, coupled to the clock receiver circuit, to generate the internal clock signal using the external clock signal. The read pipeline circuit provides read data accessed from the memory core to the data interface. The circuit provides the internal clock signal to the read pipeline circuit in response to receipt of the command that specifies the read operation.02-25-2010
20100061047Upgradable Memory System with Reconfigurable Interconnect - Described are systems that employ configurable on-die termination elements that allow users to select from two or more termination topologies. One topology is programmable to support rail-to-rail or half-supply termination. Another topology selectively includes fixed or variable filter elements, thereby allowing the termination characteristics to be tuned for different levels of speed performance and power consumption. Termination voltages and impedances might also be adjusted.03-11-2010
20100077136Memory System Supporting Nonvolatile Physical Memory - A memory system includes nonvolatile physical memory, such as flash memory, that exhibits a wear mechanism asymmetrically associated with write operations. A relatively small cache of volatile memory reduces the number of writes, and wear-leveling memory access methods distribute writes evenly over the nonvolatile memory.03-25-2010
20100142292LOW POWER MEMORY DEVICE - A method of operation within a memory device is disclosed. The method comprises receiving address information and corresponding enable information in association with a memory access request. The address information includes a row address that specifies a row of storage cells within a storage array of the memory device, and the enable information includes first and second enable values that correspond respectively to first and second storage locations within the row of storage cells. The method involves selectively transferring data between the first and second storage locations and sense amplifier circuitry according to states of the first and second enable values. This includes transferring data between the first storage location and the sense amplifier circuitry if the first enable value is in an enable state and transferring data between the second storage location and the sense amplifier circuitry if the second enable value is in the enable state. The states of the first and second enable values may be separately controlled.06-10-2010
20100223426Variable-width memory - Described is a memory system in which the memory core organization changes with device width. The number of physical memory banks accessed reduces with device width, resulting in reduced power usage for relatively narrow memory configurations. Increasing the number of logic memory banks for narrow memory widths reduces the likelihood of bank conflicts, and consequently improves speed performance.09-02-2010
20110055509CONTROL COMPONENT FOR CONTROLLING A DELAY INTERVAL WITHIN A MEMORY COMPONENT - Disclosed herein are embodiments of an asynchronous memory device that use internal delay elements to enable memory access pipelining. In one embodiment, the delay elements are responsive to an input load control signal, and are calibrated with reference to periodically received timing pulses. Different numbers of the delay elements are configured to produce different asynchronous delays and to strobe sequential pipeline elements of the memory device.03-03-2011
20110090755Memory Device Having Multiple Power Modes - A memory device having a memory core is described. The memory device includes a clock receiver circuit, a first interface to receive a read command, a data interface, and a second interface to receive power mode information. The data interface is separate from the first interface. The second interface is separate from the first interface and the data interface. The memory device has a plurality of power modes, including a first mode in which the clock receiver circuit, first interface, and data interface are turned off; a second mode in which the clock receiver is turned on and the first interface and data interface are turned off; and a third mode in which the clock receiver and first interface are turned on. In the third mode, the data interface is turned on when the first interface receives the command, to output data in response to the command.04-21-2011
20110119551Memory System with Error Detection and Retry Modes of Operation - A memory system includes a link having at least one signal line and a controller. The controller includes at least one transmitter coupled to the link to transmit first data, and a first error protection generator coupled to the transmitter. The first error protection generator dynamically adds an error detection code to at least a portion of the first data. At least one receiver is coupled to the link to receive second data. A first error detection logic determines if the second data received by the controller contains at least one error and, if an error is detected, asserts a first error condition. The system includes a memory device having at least one memory device transmitter coupled to the link to transmit the second data. A second error protection generator coupled to the memory device transmitter dynamically adds an error detection code to at least a portion of the second data.05-19-2011

Patent applications by Ely K. Tsern, Los Altos, CA US