| Patent application number | Description | Published |
|---|
| 20080316347 | ADAPTIVE PIXEL FOR HIGH DYNAMIC RANGE AND DISTURBANCE DETECTION AND CORRECTION - A new adaptive pixel architecture, folded-multiple-capture (FMC), integrates synchronous self-reset and multiple capture schemes and advantageously eliminates the requirement of a high-frame-rate sensor array, which is essential for conventional image sensors with high dynamic range. The FMC comprises a per-pixel analog-front-end (AFE), a fine analog-digital convertor (ADC) stage, and a digital-signal-processor/controller (DSPC) stage. The AFE performs programmable gain control, synchronous self-reset, sample-and-hold, and enables disturbance detection. In the AFE, a comparator compares an integrator output with a threshold voltage and produces a binary sequence accordingly. The ADC utilizes the binary sequence and the folded multiple capture signals to estimate photocurrent. An image sensor embodying the present invention adapts integration time to signal level, has minimal per-pixel hardware requirement, provides a very high dynamic range, about 120 dB or more, at high speed, about 1,000 frames/s or more, detects and corrects subframe disturbances, and consumes significantly less power. | 12-25-2008 |
| 20090075838 | Biological Analysis Arrangement and Approach Therefor - Characteristics of a chemical or biological sample are detected using an approach involving light detection. According to an example embodiment of the present invention, an assaying arrangement including a light detector is adapted to detect light from a sample, such as a biological material. A signal corresponding to the detected light is used to characterize the sample, for example, by detecting a light-related property thereof. In one implementation, the assaying arrangement includes integrated circuitry having a light detector and a programmable processor, with the light detector generating a signal corresponding to the light and sending the signal to the processor. The processor provides an output corresponding to the signal and indicative of a characteristic of the sample. | 03-19-2009 |
| 20090122148 | DISJOINT LIGHT SENSING ARRANGEMENTS AND METHODS THEREFOR - Imaging is carried out using multiple views (e.g., from a single monolithic device) to generate an image. According to an example embodiment, a scene is imaged using disjoint sensors beyond a designated focal plane to obtain multiple views of common points in the focal plane. For the common points, the multiple views are processed to compute a depth of field, and the computed depth of field to generate an image. | 05-14-2009 |
| 20090197326 | Biological Analysis Arrangement and Approach Therefor - Characteristics of a chemical or biological sample are detected using an approach involving light detection. According to an example embodiment of the present invention, an assaying arrangement including a light detector is adapted to detect light from a sample, such as a biological material. A signal corresponding to the detected light is used to characterize the sample, for example, by detecting a light-related property thereof. In one implementation, the assaying arrangement includes integrated circuitry having a light detector and a programmable processor, with the light detector generating a signal corresponding to the light and sending the signal to the processor. The processor provides an output corresponding to the signal and indicative of a characteristic of the sample. | 08-06-2009 |
| Patent application number | Description | Published |
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| 20090160040 | LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES - A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method provides for processing and manufacturing is steps limiting a maximum exposure of an integrated circuit upon which the MEMS is manufactured during MEMS manufacturing to below a temperature wherein CMOS circuitry is adversely affected, for example below 400° C., and sometimes to below 300° C. or 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronic integrated circuits, such as Si CMOS circuits. | 06-25-2009 |
| 20100279451 | DIRECT CONTACT HEAT CONTROL OF MICRO STRUCTURES - A method of providing thermal tuning of microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is disclosed. A heater is provided integrated with the MEMS for controllably heating the MEMS to control performance characteristics thereof. | 11-04-2010 |
| 20110027930 | Low Temperature Wafer Level Processing for MEMS Devices - Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C., thereby allowing the re-inforcing ceramic to be deposited after fabrication of the CMOS electronics. | 02-03-2011 |
| 20110111545 | LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES - A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation. | 05-12-2011 |
