Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Ekbote
Shashank S. Ekbote, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100327374 | LOW COST TRANSISTORS USING GATE ORIENTATION AND OPTIMIZED IMPLANTS - An integrated circuit is disclosed having symmetric and asymmetric MOS transistors of the same polarity, oriented perpendicularly to each other, formed by concurrent halo ion, LDD ion and/or S/D ion implant processes using angled, rotated sub-implants which vary the tilt angle, dose and/or energy between rotations. Implanted halo, LDD and/or S/D source and drain regions formed by angled subimplants may have different extents of overlap with, or lateral separation from, gates of the two types of transistors, producing transistors with two different sets of electrical properties. A process for concurrently fabricating the two types of transistors is also disclosed. Specific embodiments of processes for concurrently forming symmetric and asymmetric transistors are disclosed. | 12-30-2010 |
| 20110266635 | Native Devices Having Improved Device Characteristics and Methods for Fabrication - A method for fabricating a native device is presented. The method includes forming a gate structure over a substrate starting at an outer edge of an inner marker region, where the gate structure extends in a longitudinal direction, and performing MDD implants, where each implant is performed using a different orientation with respect to the gate structure, performing pocket implants, where each implant is performed using a different orientation with respect to the gate structure, and concentrations of the pocket implants vary based upon the orientations. A transistor fabricated as a native device, is presented, which includes an inner marker region, an active outer region which surrounds the inner marker region, a gate structure coupled to the inner marker region, and first and second source/drain implants located within the active outer region and interposed between the first source/drain implant and the second source/drain implant. | 11-03-2011 |
Shrikant Ekbote, New Delhi IN
| Patent application number | Description | Published |
|---|---|---|
| 20110281734 | PROCESS FOR THE PREPARATION OF LOW CONTACT RESISTANT CONTACT ON A HIGH TRANSITION TEMPERATURE SUPERCONDUCTORS - Disclosed is a three layer process for making contact points to a high transition temperature superconductor (HTSC), particularly to (Bi,Pb) | 11-17-2011 |
Shrikant Narayan Ekbote, New Delhi IN
| Patent application number | Description | Published |
|---|---|---|
| 20090192043 | Process for the preparation of oxide superconducting rods - An improved process for the preparation of oxide superconducting rods. The present invention provides a process for the preparation of oxide superconducting rods. The process includes the steps of a cold isopressing process without addition of binder, particularly thin and those based on Ag-added (Bi,Pb) | 07-30-2009 |
| 20100009855 | PROCESS FOR JOINING OXIDE SUPERCONDUCTING TUBES WITH A SUPERCONDUCTING JOINT - The present invention provides a process for joining oxide-superconducting tubes with a superconducting joint. The process involves the preparation of a partially preformed superconducting material, followed by cold isopressing of the powder of partially performed superconducting material into tube shape and further provided with grooves at both ends of the tubes with a subsequent deposition of a silver layer. The process further involves the lapping of one of the end faces of a pair of said tubes to be joined. These lapped end faces of both the tubes clubbed together on a common silver bush are coated with a paste of the same partially preformed superconducting material in organic formulation. Then these coated end faces are closed pressed together to form a joint. This joint portion and the end portions of the tubes are wrapped with a perforated silver foil followed by deposition of another layer of silver. Finally, the assembly of this joint portion and the pair of tubes is heat treated in air for 100 to 150 hours and at temperatures from 830° to 850° C. The joint made according to this process is able to stably carry not less than 80% of the transport current of the high temperature superconducting tubes. | 01-14-2010 |