| Patent application number | Description | Published |
|---|
| 20100133090 | FILM FORMING METHOD BY SPUTTERING AND SPUTTERING APPARATUS THEREOF - To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage. | 06-03-2010 |
| 20100155227 | SPUTTERING APPARATUS AND FILM FORMING METHOD - The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode ( | 06-24-2010 |
| 20100155229 | SPUTTERING APPARATUS AND FILM DEPOSITION METHOD - The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode ( | 06-24-2010 |
| 20100189532 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 07-29-2010 |
| 20100213048 | MAGNETRON SPUTTERING CATHODE, MAGNETRON SPUTTERING APPARATUS, AND METHOD OF MANUFACTURING MAGNETIC DEVICE - To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet | 08-26-2010 |
| 20100215460 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 08-26-2010 |
| 20100239394 | INLINE-TYPE WAFER CONVEYANCE DEVICE - There are comprised a load chamber ( | 09-23-2010 |
| 20110139998 | ION BEAM GENERATOR - [Objective of the Invention] An ion beam generator, a thermal distortion in a grid assembly is reduced. | 06-16-2011 |
