| Patent application number | Description | Published |
|---|
| 20100133090 | FILM FORMING METHOD BY SPUTTERING AND SPUTTERING APPARATUS THEREOF - To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage. | 06-03-2010 |
| 20100155227 | SPUTTERING APPARATUS AND FILM FORMING METHOD - The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode ( | 06-24-2010 |
| 20100155229 | SPUTTERING APPARATUS AND FILM DEPOSITION METHOD - The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode ( | 06-24-2010 |
| 20100189532 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 07-29-2010 |
| 20100213048 | MAGNETRON SPUTTERING CATHODE, MAGNETRON SPUTTERING APPARATUS, AND METHOD OF MANUFACTURING MAGNETIC DEVICE - To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet | 08-26-2010 |
| 20100215460 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 08-26-2010 |
| 20100239394 | INLINE-TYPE WAFER CONVEYANCE DEVICE - There are comprised a load chamber ( | 09-23-2010 |
| 20110139998 | ION BEAM GENERATOR - [Objective of the Invention] An ion beam generator, a thermal distortion in a grid assembly is reduced. | 06-16-2011 |
| Patent application number | Description | Published |
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| 20090078571 | MAGNET ASSEMBLY CAPABLE OF GENERATING MAGNETIC FIELD HAVING DIRECTION THAT IS UNIFORM AND CAN BE CHANGED AND SPUTTERING APPARATUS USING THE SAME - The magnet assembly includes one rotatable dipole magnet subassembly, which is formed from a permanent magnet and a magnetically permeable convex end portion coupled to each of both ends of the permanent magnet, and at least two magnetically permeable flux guide subassemblies, which are configured so as to be magnetically coupled to the dipole magnet subassembly. The flux guide subassembly has a concave end portion that fits into the convex end portion. The flux guide assemblies guide a flux from the dipole magnet subassembly and generate a flux outside. The condition of fitting into the flux guide subassemblies is reversed by rotating the dipole magnet subassembly, whereby it is possible to easily reverse the direction of a magnetic field generated outside. | 03-26-2009 |
| 20100096568 | SUBSTRATE PROCESSING APPARATUS AND CLEANING METHOD OF THE SAME - A method for cleaning a substrate processing apparatus in which a first ion beam generator and a second ion beam generator are arranged opposite to each other to sandwich a plane on which a substrate is to be placed, and which processes two surfaces of the substrate, comprises steps of retreating the substrate from a position between the first ion beam generator and the second ion beam generator, and cleaning the second ion beam generator by emitting an ion beam from the first ion beam generator to the second ion beam generator. | 04-22-2010 |
| 20100108495 | THIN FILM FORMATION APPARATUS AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - The present invention provides a thin film formation apparatus which includes a plurality of chambers, and performs processing for forming thin films on two surfaces of a substrate transferred to the plurality of chambers, wherein a first sputtering chamber of the plurality of chambers includes a first sputtering film formation unit configured to perform a sputtering film formation process on a first surface of the substrate, and a first heating unit configured to heat a second surface opposite to the first surface of the substrate, and a second sputtering chamber of the plurality of chambers includes a second heating unit configured to heat the first surface of the substrate having undergone the sputtering film formation process performed by the first sputtering chamber, and a second sputtering film formation unit configured to perform a sputtering film formation process on the second surface of the substrate heated by the first sputtering chamber. | 05-06-2010 |
| 20100108496 | SPUTTERING APPARATUS, THIN FILM FORMATION APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - A sputtering apparatus includes a first target accommodating unit to accommodate a first target for film formation on a substrate; a first heater, arranged to surround the first target, for heating the substrate; and a second target accommodating unit arranged to surround the first heater to accommodate a second target for film formation on the substrate. | 05-06-2010 |
| 20110155569 | COOLING SYSTEM - A cooling system that cools a wafer in a vacuum chamber of a sputtering apparatus, includes a wafer cooling stage for cooling the wafer, a cooling mechanism for cooling the wafer cooling stage, cooling gas supply units which introduces a cooling gas to the wafer cooling stage, a wafer rotating mechanism which holds the wafer in a state separated from the wafer cooling stage by a predetermined gap, and is rotated while holding the wafer, and a driving mechanism which rotates the wafer rotating mechanism at a predetermined rotational speed. | 06-30-2011 |
