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Eimori
Takahisa Eimori, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100258878 | CMOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A CMOS semiconductor device having an n-type MOSFET and a p-type MOSFET, comprising: a gate electrode of the n-type MOSFET having a first insulation layer composed of a high-k material, and a first metal layer provided on the first insulation layer and composed of a metal material; and a gate electrode of the p-type MOSFET having a second insulation layer composed of a high-k material, and a second metal layer provided on the second insulation layer and composed of a metal material, wherein the first insulation layer and the second insulation layer are composed of the different high-k materials, and the first metal layer and the second metal layer are composed of the same metal material. | 10-14-2010 |
Takahisa Eimori, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080308869 | SEMICONDUCTOR DEVICE WHICH HAS MOS STRUCTURE AND METHOD OF MANUFACTURING THE SAME - The technology which can control a threshold value appropriately, adopting the material which fitted each gate electrode of the MOS structure from which a threshold value differs without making the manufacturing process complicated, and does not make remarkable diffusion to the channel region from the gate electrode is offered. | 12-18-2008 |
| 20100038729 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A base insulating film containing hafnium and oxygen is formed on a silicon oxide (SiO | 02-18-2010 |
Takeshi Eimori, Tonami-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090056450 | ACCELERATION SENSOR - An acceleration sensor includes a detection element having a plurality of piezoelectric ceramic layers laminated together and a pair of retaining members that retain an end portion of the detection element in a longitudinal direction thereof at two principal surfaces of the end portion. The detection element includes electrodes between the ceramic layers and on principal surfaces. The detection element obtains a voltage or a charge generated in the detection element in response to an application of acceleration from the principal-surface electrodes and the interlayer electrodes. The piezoelectric ceramic layers are not polarized in areas between the principal-surface electrodes and the interlayer electrodes within a retaining area in which the detection element is retained by the retaining members. | 03-05-2009 |