| Patent application number | Description | Published |
|---|
| 20080231998 | MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME - A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe | 09-25-2008 |
| 20080253174 | MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME - A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable. | 10-16-2008 |
| 20080291585 | MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY - It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible. | 11-27-2008 |
| 20090079018 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L1 | 03-26-2009 |
| 20090080124 | MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME - A magnetoresistive element includes: a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material. | 03-26-2009 |
| 20090080238 | MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME - The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio. | 03-26-2009 |
| 20090166322 | MAGNETO-RESISTIVE ELEMENT - A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens. | 07-02-2009 |
| 20090243008 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a | 10-01-2009 |
| 20090251951 | MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - A magnetoresistive element includes a foundation layer, a first magnetic layer on the foundation layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer is made of a ferromagnetic metal containing one or more elements selected from a first group consisting of Co, Fe, and Ni, and one or more elements selected from a second group consisting of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir, and Os. The foundation layer is made of a metal containing one or more elements selected from a third group consisting of Al, Ni, Co, Fe, Mn, Cr, and V. | 10-08-2009 |
| 20100118600 | MAGNETORESISTIVE ELEMENT - A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms<√{square root over ( )}{Jw/(6πAt)}. Jw is a write current density, t is a thickness of the free layer, A is a constant. | 05-13-2010 |
| 20100230770 | MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME - The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio. | 09-16-2010 |
| 20100290270 | MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY HAVING SAID MAGNETIC MEMORY ELEMENT, AND METHOD FOR DRIVING MAGNETIC MEMORY - An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer. | 11-18-2010 |
