Patent application number | Description | Published |
20100009127 | METHOD FOR FORMING A MICRO PATTERN USING A TRANSFER TECHNIQUE - A pattern transfer method includes: forming a dielectric film on a first substrate on which a concavo-convex pattern is formed; coupling together the first substrate and a second substrate with an intervention of the dielectric film, a fluorine-containing UV-ray-cured resin and a fluorine-free UV-ray-cured resin which are arranged in this order from the first substrate to the second substrate; separating the first substrate from the second substrate at an interface between the dielectric film and the to fluorine-containing UV-ray-cured resin, to transfer the concavo-convex pattern onto the fluorine-containing UV-ray-cured resin. | 01-14-2010 |
20100068479 | FINE-PATTERN STRUCTURAL BODY MANUFACTURING METHOD AND FINE-PATTERN STRUCTURAL BODY - To provide a fine-pattern structural body manufacturing method having advantages such as excellent handling property. The fine-pattern structural body manufacturing method of the present invention includes following steps, i.e., a step of laminating a film substrate having flexibility and a mold having a fine pattern formed thereon in such a manner that one surface of the film substrate and a surface of the mold where the fine pattern is formed face with each other, a step of laminating other surface of the film substrate and a rigid substrate having rigidity, a step of separating the mold from the film substrate, a step of forming a recording film on the surface of the film substrate from which the mold is separated, a step of forming a protective film on the recording film, and a step of separating the rigid substrate from the film substrate. | 03-18-2010 |
20110200780 | OPTICAL INFORMATION RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME - Provided is a manufacturing method of an optical information storage medium irradiated with laser beams to optically record or reproduce information. A method of manufacturing an optical information storage medium according to the present invention includes forming asperity patterns for guiding laser beams on both sides of a second substrate | 08-18-2011 |
20120021160 | METHOD FOR MANUFACTURING OPTICAL INFORMATION RECORDING MEDIUM, AND OPTICAL INFORMATION RECORDING MEDIUM - The method of manufacturing an optical information recording medium includes a first resin applying step of applying a first photo-curing resin to one surface of a first substrate, a first resin curing step of laminating a first stamper having an uneven surface on the first photo-curing resin, and irradiating ultraviolet rays via the first stamper to cure the first photo-curing resin, a second resin applying step of applying a second photo-curing resin to the other surface of the first substrate, a second resin curing step of laminating a second stamper having an uneven surface on the second photo-curing resin, and irradiating ultraviolet rays via the first second to cure the second photo-curing resin, a first stamper peeling step of peeling the second stamper from the second photo-curing resin, and a first recording layer laminating step of laminating a first recording layer on an exposed surface of the second photo-curing resin. | 01-26-2012 |
20130175645 | MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME - A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer. | 07-11-2013 |
Patent application number | Description | Published |
20120135275 | MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING LAYER WITH PERPENDICULAR MAGNETIC ANISOTROPY FILM - A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric. | 05-31-2012 |
20120199470 | MTJ FILM AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an MTJ film includes forming a first ferromagnetic layer; forming a tunnel barrier layer over the first ferromagnetic layer; and forming a second ferromagnetic layer over the tunnel barrier layer. The first ferromagnetic layer is a Co/Ni stacked film having perpendicular magnetic anisotropy. The step for forming a tunnel barrier layer includes repeating unit film formation treatment n times (n is an integer of 2 or more). The unit film formation treatment includes the steps of: depositing an Mg film by a sputtering method; and oxidizing the deposited Mg film. A film thickness of the deposited Mg film in the first unit film formation treatment is 0.3 nm or more and 0.5 nm or less. A film thickness of the deposited Mg film in the second unit film formation treatment or later is 0.1 nm or more and 0.45 nm or less. | 08-09-2012 |
20120211811 | MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF - A magnetic memory has a magnetic recording layer, a reference layer connected via a non-magnetic layer to the magnetic recording layer, first and second magnetization pinning layers disposed below the magnetic recording layer. The magnetic recording layer and the reference layer have a perpendicular magnetic anisotropy. The magnetic recording layer has a magnetization reversal region having a reversible magnetization and overlapping the difference layer, a first magnetization pinned region connected to a first boundary of the magnetization reversal region with the direction of the magnetization being fixed in a first direction, and a second magnetization pinned region connected to a second boundary of the magnetization reversal region with the direction of magnetization being fixed in a second direction anti-parallel to the first direction. The first and the second magnetization pinning layers fix the magnetization of the first and the second magnetization pinned regions. | 08-23-2012 |
20130075846 | MAGNETIC MEMORY - A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer. | 03-28-2013 |
20130234268 | MAGNETIC MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - The present invention suppresses short circuits of a magnetic memory cell and a deterioration of the characteristics of a magnetic layer. A magnetic memory cell includes: a data storage layer; a tunnel barrier layer formed on the data storage layer; a reference layer formed on the tunnel barrier layer so as to cover a part of the tunnel barrier layer; and a metallic oxide layer formed on the tunnel barrier layer without covering the reference layer. The metallic oxide layer contains an oxide of a material of a contact part of the reference layer with the tunnel barrier layer. | 09-12-2013 |
20130285176 | MAGNETIC BODY DEVICE AND MANUFACTURING METHOD THEREOF - A magnetic body device has a stacked structure comprising an underlying layer, a magnetic body layer, and a cap layer. The material for the underlying layer is different from that for the cap layer. The magnetic body layer has a free magnetization region having perpendicular magnetic anisotropy and a first characteristic change region and a second characteristic change region situated on both sides of the free magnetization region in a first in-plane direction. The perpendicular magnetic anisotropy of the first characteristic change region and the second characteristic change region is at a level lower than that of the free magnetization region. An external magnetic field containing a component in the first in-plane direction is applied to the free magnetization region. Further, a current in the first in-plane direction is supplied to the free magnetization region. | 10-31-2013 |