Patent application number | Description | Published |
20080237623 | LIGHT EMITTING DEVICE - A light emitting device includes a pair of electrodes, wherein at least one electrode is transparent or semi-transparent, and an phosphor layer provided between the pair of electrodes, wherein the phosphor layer includes a layer having nitride semiconductor particles, and wherein the nitride semiconductor particles have metal nano structures precipitated in grain boundaries between the nitride semiconductor particles. | 10-02-2008 |
20080237628 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD - A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron transporting layer. | 10-02-2008 |
20090206730 | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE - This light emitting device includes a pair of electrodes at least one of which is transparent or translucent, and a phosphor layer that is sandwiched between the electrodes and has a polycrystalline structure made of a first semiconductor material, and in this structure, a second semiconductor material different from the first semiconductor material is segregated on a grain boundary of the polycrystalline structure. The first semiconductor material and the second semiconductor material preferably have semiconductor structures of conduction types that are different from each other. Moreover, the first semiconductor material preferably has an n-type semiconductor structure, and the second semiconductor material preferably has a p-type semiconductor structure. Furthermore, in the case where the first semiconductor material is a zinc-based material containing zinc, at least one of the paired electrodes is preferably made of a material containing zinc. | 08-20-2009 |
20090213615 | LIGHT EMITTING DEVICE HAVING A STRAIGHT-LINE SHAPE - A light emitting device having a straight-line shape is provided with: a pair of first and second electrodes each having a straight-line shape which face each other; and a phosphor layer having a straight-line shape provided so as to be sandwiched between the pair of electrodes, wherein at least one of the pair of first and second electrodes is a transparent electrode, at least one buffer layer is provided so as to be sandwiched between the first or second electrode and the phosphor layer, and the buffer layer makes the height of a potential barrier between the electrode and the phosphor layer which sandwich the buffer layer lower than the height of a Schottky barrier when the electrode and the phosphor layer are brought into direct contact. | 08-27-2009 |
20100102343 | DISPLAY DEVICE - A display device is provided with a pair of a first electrode and a second electrode, at least one electrode of the first and second electrodes being transparent or translucent and a phosphor layer provided as being sandwiched between the first electrode and the second electrode, and at least one buffer layer provided as being sandwiched between the first or second electrode and the phosphor layer, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions, and wherein the buffer layer is sandwiched between the first or second electrode and the phosphor layer so that the size of an electric potential barrier between the first or second electrode and the phosphor layer via the buffer layer is made smaller than the size of a Schottky barrier between the first or second electrode and the phosphor layer that are directly made contact with each other without the buffer layer therebetween. | 04-29-2010 |
20100182800 | LINEAR LIGHT-EMITTING DEVICE - A linear light-emitting device is provided with a pair of first and second linear electrodes opposing each other, and a linear phosphor layer is sandwiched between the paired electrodes, with at least one of the paired first and second electrodes being a transparent electrode, and the phosphor layer has a polycrystalline structure made from a first semiconductor substance, with a second semiconductor substance different from the first semiconductor substance being segregated on a grain boundary of the polycrystalline structure. | 07-22-2010 |
20100188319 | DISPLAY APPARATUS - A display is provided with: a substrate; a plurality of parallel scan wires extending over the substrate in a first direction; a plurality of parallel data wires extending parallel to a surface of the substrate in a second direction perpendicular to the first direction; at least one switching element per intersection between the scan wires and the data wires; pixel electrodes connected to the switching elements; at least one phosphor layer provided above the pixel electrodes; and common electrodes provided above the phosphor layer, and the phosphor layer has a polycrystalline structure made of a first semiconductor material and a second semiconductor material segregated between grain boundaries in the polycrystalline structure, which is different from the first semiconductor material. | 07-29-2010 |
20100213450 | PHOSPHOR ELEMENT AND DISPLAY DEVICE - A phosphor element is provided with a first electrode and a second electrode. The electrodes are arranged to face each other, and at least one of the electrodes is transparent or semi-transparent. The phosphor element is also provided with a phosphor layer, which is sandwiched between the first electrode and the second electrode and has phosphor particles dispersed in a medium made of a hole transport material. Conductive nano particles are held on the surface of each of the phosphor particles. | 08-26-2010 |
20100231487 | LIGHT-EMITTING DEVICE AND DISPLAY - This light-emitting device includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode and constituted by dispersing n-type semiconductor particles in a p-type semiconductor medium. A light-emitting device in another embodiment includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode wherein a p-type semiconductor is segregated among the n-type semiconductor particles. | 09-16-2010 |
20100245218 | LIGHT-EMITTING DEVICE AND DISPLAY DEVICE - Disclosed is a light-emitting device including a first electrode and a second electrode arranged facing each other, at least one of the electrodes being transparent or semi-transparent, and a phosphor layer provided as being sandwiched between the first electrode and the second electrode. In the phosphor layer, conductive nano particles and phosphor particles are dispersed in a matrix including a hole-transporting material. Also disclosed is another light-emitting device including a first electrode and a second electrode arranged facing each other, at least one of the electrodes being transparent or semi-transparent, and a phosphor layer sandwiched between the first electrode and the second electrode. This phosphor layer includes a phosphor particle powder containing phosphor particles, the phosphor particle having at least surface covered with a coating layer, the coating layer including a hole transport material and conductive nano particles dispersed in the hole transport material. | 09-30-2010 |
20100276675 | LIGHT-EMITTING DEVICE - Disclosed is a light emitting device including a pair of electrodes at least one of which is transparent or semi-transparent, and a phosphor layer arranged between the pair of electrodes. The phosphor layer contains phosphor particles dispersed therein, and conductive nano particles are interposed at the interface between the phosphor layer and one of the electrodes. Also disclosed is another light emitting device including a pair of electrodes at least one of which is transparent or semi-transparent, and a phosphor layer arranged between the pair of electrodes. In this light emitting device, the phosphor layer contains phosphor particles dispersed therein, and at least one of the pair of electrodes is provided with a brush-like electrode projecting towards the phosphor layer. The brush-like electrode may be provided on the electrode on the positive electrode side, and the brush-like electrode provided on the electrode on the positive electrode side may preferably have a work function of 4.5 eV or more. | 11-04-2010 |
20100283066 | LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME - A light emitting device ( | 11-11-2010 |
20100308332 | DISPLAY DEVICE - A display device is provided with a pair of a first electrode and a second electrode at least one of which is transparent or translucent and a phosphor layer formed so as to be sandwiched between the first electrode and the second electrode, and the phosphor layer has a polycrystal structure made of a first semiconductor substance in which a second semiconductor substance different from the first semiconductor substance is segregated on a grain boundary of the polycrystal structure, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions. | 12-09-2010 |
20100314639 | LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME - The light emitting device ( | 12-16-2010 |
20110006296 | LIGHT EMITTING DEVICE - A light emitting device ( | 01-13-2011 |
20110012167 | LIGHT EMITTING ELEMENT - A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes. | 01-20-2011 |
20110156080 | LIGHT EMITTING DEVICE - A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each other on a plane in parallel with the c-axe. | 06-30-2011 |
20110175098 | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE - A light emitting element includes: a first electrode and a second electrode provided as being opposed each other, at least one of the first electrode and the second electrode being transparent or translucent; and a phosphor layer sandwiched between the first electrode and the second electrode, from a direction that is perpendicular to main surfaces of the first and second electrodes. In this structure, the phosphor layer includes: a plurality of phosphor particles that are disposed within a plane of the phosphor layer; and a first and second insulating guides that sandwich two sides of each of the phosphor particles from a direction that is in parallel with the surface of the phosphor layer. | 07-21-2011 |
20120018728 | THIN FILM TRANSISTOR, DISPLAY DEVICE USING THE SAME, AND THIN FILM TRANSISTOR MANUFACTURING METHOD - A TFT of the present invention includes: a supporting substrate; a gate electrode formed on the supporting substrate; a gate insulation film formed on the substrate so as to cover the gate electrode; a first semiconductor layer formed across from the gate electrode with respect to the gate insulation film; a second semiconductor layer (i) formed on the first semiconductor layer, and (ii) having a first thickness and a secorrd thickness which is greater than the first thickness; an ohmic contact layer formed on the second semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer, spacing apart with each other. | 01-26-2012 |
20120094403 | METHOD OF MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE - Provided is a method of manufacturing a TFT substrate for preventing characteristics of a native oxide layer in a boundary between a microcrystal semiconductor layer and an amorphous semiconductor layer from being degraded. The method includes forming a gate electrode, forming a gate insulating film, modifying the formed first amorphous silicon thin film into a first crystalline silicon thin film, removing a silicon oxide layer on the surface of the first crystalline silicon thin film, forming the second amorphous silicon thin film, and dry etching the first crystalline silicon thin film and the second amorphous silicon thin film, and it is determined whether or not the in-process TFT substrate after the dry etching is returned to the processes after the dry etching by measuring the emission intensity of radicals in plasma during the dry etching and detecting the presence or absence of the silicon oxide layer in the boundary. | 04-19-2012 |
20130001572 | DISPLAY DEVICE, THIN-FILM TRANSISTOR USED FOR DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTORS - A thin-film transistor used for a display device includes a gate electrode formed on an insulating substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a semiconductor layer composed of first semiconductor layer and second semiconductor layer formed on the gate insulating film; an ohmic contact layer formed on the semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer so as to be spaced from each other. The transistor further includes an etching stopper made of spin-on glass (SOG) on a channel-forming region of the semiconductor layer. | 01-03-2013 |
20130016298 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes a pair of transparent substrates disposed facing each other through a liquid crystal layer; a gate insulating film formed so as to cover a gate electrode formed in the pixel regions of one of the pair of the transparent substrates closer to the liquid crystal layer; a switching element made of a thin-film transistor placed on the gate insulating film; a first electrode placed on the switching element through first and second insulating films; and a second electrode placed on the first electrode through a third insulating film. The liquid crystal display device generates an electric field in parallel with the pair of the transparent substrates and between the first and second electrodes. The second insulating film is formed of an SOG material having Si—O bonds. | 01-17-2013 |
20130021553 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes a pair of transparent substrates facing each other through a liquid crystal layer disposed therebetween; a gate insulating film formed so as to cover a gate electrode formed in the pixel regions, disposed closer to the liquid crystal layer, of one of the transparent substrates; a semiconductor film provided on the gate insulating film, for forming a thin-film transistor; a first electrode provided on the semiconductor film through the first insulating film and the second insulating film; a second electrode provided on the first electrode through a third insulating film; and a contact hole formed collectively in the first insulating film, the second insulating film, and the third insulating film on the first electrode, where a second electrode is formed on the contact hole. A floating electrode is formed in the peripheral region of the contact hole. | 01-24-2013 |