Patent application number | Description | Published |
20090008034 | PLASMA PROCESSING APPARATUS - A plasma generation chamber and a processing chamber are isolated from each other by a barrier wall member disposed between them. The barrier wall member includes two plate members and stacked one on top of the other over a gap, a plurality of through holes and, via which hydrogen radicals are allowed to pass, are respectively formed at the plate member and the plate member. The through holes at one plate member are formed with an offset relative to the through holes formed at the other plate member and the plate members are both constituted of an insulating material that does not transmit ultraviolet light. | 01-08-2009 |
20090081565 | METHOD FOR FORMING ETCHING MASK, CONTROL PROGRAM AND PROGRAM STORAGE MEDIUM - Disclosed is a method for forming an etching mask, capable of precisely and easily forming an etching mask having a microscopic pattern of a non-straight-line shape. An exposure pattern of a straight-line shape is transferred to a photoresist by using a first reticle and developed, and after a trimming process, a SiO | 03-26-2009 |
20090179003 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - An ashing process in which an etching mask is removed through ashing by supplying hydrogen radicals toward a wafer W being heated to a predetermined temperature and a restoration process in which the film quality of a low dielectric constant insulating film having been damaged during an etching process is restored while, at the same time, rendering the low dielectric constant insulating film exposed at a recessed portion into a hydrophobic state by supplying a gas containing a β-diketone compound with an ignition point equal to or higher than 300° C. toward the wafer W having undergone the ashing process, are executed. | 07-16-2009 |
20110065049 | PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A disclosed mask pattern forming method includes isotropically coating a surface of a resist pattern array having a predetermined line width with a silicon oxide film, embedding a gap in the resist pattern array coated by the silicon oxide film with a carbon film, removing the carbon film from the upper portion and etching back the carbon film while leaving the carbon film within the gap in any order, removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness in any order, and forming a first mask pattern array which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width, and arranged interposing a space width substantially the same as the predetermined line width with an asking process provided to the resist pattern array exposed from the removed silicon oxide film. | 03-17-2011 |
20110104901 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes a process of forming a first organic film pattern on a to-be-etched layer on a substrate, a process of forming a silicon oxide film coating the first organic film pattern in an isotropic manner, a process of etching the silicon oxide film to form a first mask pattern in such a manner to cause the width of the line part of the first organic film pattern to have a fixed proportion with respect to a thickness of the silicon oxide film that coats a surface of the line part in the isotropic manner, a process of forming a second organic film pattern coating the silicon oxide film, a process of forming a second mask pattern that includes the silicon oxide film on a side face part in an area that is coated by the second organic film pattern, and a process of, in an area other than the area that is coated by the second organic film pattern, forming a third mask pattern in which an even number of the silicon oxide films are arranged. | 05-05-2011 |
20110201206 | METHOD FOR FORMING AMORPHOUS CARBON NITRIDE FILM, AMORPHOUS CARBON NITRIDE FILM, MULTILAYER RESIST FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM IN WHICH CONTROL PROGRAM IS STORED - An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an N | 08-18-2011 |
20120031434 | SUBSTRATE CLEANING METHOD - There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate. | 02-09-2012 |
20120190206 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes forming a first organic film pattern on a to-be-etched layer on a substrate, forming a silicon oxide film coating the first organic film pattern-etching the silicon oxide film to form a first mask pattern to cause the width of the line part of the first organic film pattern to have a fixed proportion with respect forming a second organic film pattern coating the silicon oxide film, forming a second mask pattern including the silicon oxide film on a side face part in an area coated by the second organic film pattern, and forming, in an area other than the area coated by the second organic film pattern, a third mask pattern in which an even number of the silicon oxide films are arranged. | 07-26-2012 |
20130122429 | PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A disclosed manufacturing method of a semiconductor device includes laminating a substrate, an etched film, an anti-reflective coating film, and a resist film; forming a pattern made of the resist film using a photolithographic technique; forming the third mask pattern array by a mask pattern forming method; and a seventh step of forming a fourth mask pattern array by processing the etched film using the third mask pattern array. | 05-16-2013 |
20130302993 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PLASMA ETCHING APPARATUS - A semiconductor device manufacturing method includes a plasma etching step for etching an etching target film formed on a substrate accommodated in a processing chamber. In the plasma etching step, a processing gas including a gaseous mixture containing predetermined gases is supplied into the processing chamber, and a cycle including a first step in which a flow rate of at least one of the predetermined gases is set to a first value during a first time period and a second step in which the flow rate thereof is set to a second value that is different from the first value during a second time period is repeated consecutively at least three times without removing a plasma. The first time period and the second time period are set to about 1 to 15 seconds. | 11-14-2013 |