Patent application number | Description | Published |
20110115033 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region. | 05-19-2011 |
20110284957 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To fabricate a power MOSFET, etc. high in voltage-proofing (or breakdown voltage) and low in ON resistance (or On-state resistance) by a trench filling method, trial manufacture of power MOSFETs, etc. has been repeated with varying internal structures and layouts of super junction structures in a chip inner region located inside a guard ring. As a result, there occasionally occurred a source-drain voltage-proofing defect attributable to outer end portions of a supper junction structure. In one aspect of the present invention there is provided a semiconductor device having a power semiconductor element with a super junction structure introduced substantially throughout the whole surface of a drift region, the super junction structure being provided substantially throughout the whole surfaces of end portions of a semiconductor chip which configures the semiconductor device. | 11-24-2011 |
20110294278 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device which prevents damage to alignment marks used for alignment between a superjunction structure and process layers at subsequent steps. In the related art, recesses are made in a semiconductor substrate before the formation of the superjunction structure and used as alignment marks and in order to prevent damage to the alignment marks, the alignment marks are covered by an insulating film such as a silicon oxide film during the subsequent process of forming the superjunction structure, but the inventors have found that damage may penetrate the cover film, reach the semiconductor substrate and destroy the marks. In the method according to the invention, alignment marks for alignment between the superjunction structure and process layers at subsequent steps are formed after the formation of the superjunction structure. | 12-01-2011 |
20130189819 | METHOD OF MANUFACTURING VERTICAL PLANAR POWER MOSFET AND METHOD OF MANUFACTURING TRENCH-GATE POWER MOSFET - In the manufacturing steps of a super-junction power MOSFET having a drift region having a super junction structure, after the super junction structure is formed, introduction of a body region and the like and heat treatment related thereto are typically performed. However, in the process thereof, a dopant in each of P-type column regions and the like included in the super junction structure is diffused to result in a scattered dopant profile. This causes problems such as degradation of a breakdown voltage when a reverse bias voltage is applied between a drain and a source and an increase in ON resistance. According to the present invention, in a method of manufacturing a silicon-based vertical planar power MOSFET, a body region forming a channel region is formed by selective epitaxial growth. | 07-25-2013 |
20130264650 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region. | 10-10-2013 |
20140120669 | METHOD OF MANUFACTURING VERTICAL PLANAR POWER MOSFET AND METHOD OF MANUFACTURING TRENCH-GATE POWER MOSFET - In the manufacturing steps of a super-junction power MOSFET having a drift region having a super junction structure, after the super junction structure is formed, introduction of a body region and the like and heat treatment related thereto are typically performed. However, in the process thereof, a dopant in each of P-type column regions and the like included in the super junction structure is diffused to result in a scattered dopant profile. This causes problems such as degradation of a breakdown voltage when a reverse bias voltage is applied between a drain and a source and an increase in ON resistance. According to the present invention, in a method of manufacturing a silicon-based vertical planar power MOSFET, a body region forming a channel region is formed by selective epitaxial growth. | 05-01-2014 |
20140191309 | VERTICAL POWER MOSFET - When forming a super junction by the embedded epitaxial method, adjusting a taper angle of dry etching to form an inclined column is generally performed in trench forming etching, in order to prevent a reduction in breakdown voltage due to fluctuations in concentration in an embedded epitaxial layer. However, according to the examination by the present inventors, it has been made clear that such a method makes design more and more difficult in response to the higher breakdown voltage. In the present invention, the concentration in an intermediate substrate epitaxy column area in each substrate epitaxy column area configuring a super junction is made more than that in other areas within the substrate epitaxy column area, in a vertical power MOSFET having the super junction by the embedded epitaxial method. | 07-10-2014 |
20140206162 | MANUFACTURING METHOD OF POWER MOSFET USING A HARD MASK AS A STOP LAYER BETWEEN SEQUENTIAL CMP STEPS - A manufacturing method of a power MOSFET employs a hard mask film over a portion of the wafer surface as a polishing stopper, between two successive polishing steps. After embedded epitaxial growth is performed in a state where a hard mask film for forming trenches is present in at least a scribe region of a wafer, primary polishing is performed by using the hard mask film as a stopper, and secondary polishing is then performed after the hard mask film is removed. | 07-24-2014 |
20140284705 | METHOD OF MANUFACTURING VERTICAL PLANAR POWER MOSFET AND METHOD OF MANUFACTURING TRENCH-GATE POWER MOSFET - In the manufacturing steps of a super-junction power MOSFET having a drift region having a super junction structure, after the super junction structure is formed, introduction of a body region and the like and heat treatment related thereto are typically performed. However, in the process thereof, a dopant in each of P-type column regions and the like included in the super junction structure is diffused to result in a scattered dopant profile. This causes problems such as degradation of a breakdown voltage when a reverse bias voltage is applied between a drain and a source and an increase in ON resistance. According to the present invention, in a method of manufacturing a silicon-based vertical planar power MOSFET, a body region forming a channel region is formed by selective epitaxial growth. | 09-25-2014 |
20140299961 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region. | 10-09-2014 |
Patent application number | Description | Published |
20080230300 | Steering Control Apparatus and Method - A vehicle steering control device is provided that suppresses changes in the steering force accompanying the shock transmitted from the road surface during the steering wheel return operation. The vehicle steering device is a steer-by-wire steering device where a steering wheel receiving the steering input which is transmitted electronically to the steering unit which turns steered road wheels of the vehicle. The steering reaction force correction (Gf×F) corresponding to road surface reaction force F is applied to the steering wheel. The device includes a turn/return sensor that senses turn/return of the steering wheel, and during return of steering wheel, road surface reaction force feedback gain Gf is made smaller than the initial turning. | 09-25-2008 |
20080249685 | Steering Control Apparatus and Method - A vehicle steering controller includes a turning unit which is mechanically separated from a steering unit, which receives the steering input, and turns the road wheels corresponding to the steering input. The controller also includes a reaction force motor that applies a steering reaction force corresponding to the turning state of the turning unit to the steering unit, a hands-off detection sensor that detects whether the steering unit is in the hands-off state, and a steering reaction force correction component that reduces the steering reaction force from that in the hands-on state when the hands-off state is detected. | 10-09-2008 |
20100138112 | VEHICLE STEERING CONTROL DEVICE AND METHOD - Under an automatic turning control, a steering controller defines a value of steering angle set according to a target turning angle of the automatic turning control, as a value of steering angle at which a reaction force is equal to 0. Thereby, the steering controller controls a steering reaction force on the basis of a difference between an actual steering angle and the value of steering angle at which the reaction force is equal to 0. | 06-03-2010 |
Patent application number | Description | Published |
20080250642 | LIQUID EJECTION HEAD, LIQUID EJECTION APPARATUS, AND METHOD FOR FABRICATING LIQUID EJECTION HEAD - A liquid ejection head includes a liquid chamber configured to contain liquid to be ejected from a nozzle, a liquid ejection member including the nozzle, and an energy generating element configured to provide energy to the liquid contained in the liquid chamber. The energy generating element ejects the liquid contained in the liquid chamber from the nozzle as a liquid droplet. A depression is formed on a surface of the liquid ejection member around the nozzle such that an opening of the depression has a width greater than a width of an opening of the nozzle and the nozzle is positioned at the bottom of the depression. The interior angle of the bottom corner of the depression is determined to be greater than 90 degrees. | 10-16-2008 |
20080259128 | LIQUID-EJECTING HEAD, LIQUID-EJECTING DEVICE, LIQUID-EJECTING METHOD, AND EJECTION MEDIUM FOR LIQUID-EJECTING HEAD - A liquid-ejecting head includes a liquid cell that contains an ejection medium that is liquid at normal temperature, a nozzle for ejecting the ejection medium in the liquid cell, an energy-generating element for supplying ejection energy to the ejection medium in the liquid cell, and heating means for heating the liquid cell independently of the supply of the ejection energy to the ejection medium in the liquid cell. The energy-generating element is driven to eject the ejection medium from the nozzle in a droplet form. The heating means is supplied with a substantially direct current component to generate heat so that at least the temperature of the liquid cell is constantly maintained above the ambient temperature irrespective of whether the energy-generating element is driven. | 10-23-2008 |
20090040280 | LIQUID EJECTING HEAD AND LIQUID EJECTING DEVICE - A liquid ejecting head having at least one heat-energy evolving element constructed in a pattern with at least one bend and that evolves heat energy to eject liquid, conductors connected to the heat evolving element and to the bend and a nozzle through which liquid is ejected associated with each heat-energy evolving element. | 02-12-2009 |
20090056768 | LIQUID EJECTION HEAD, LIQUID EJECTION APPARATUS, AND MANUFACTURING METHOD OF LIQUID EJECTION HEAD - A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet. | 03-05-2009 |
20090085955 | LIQUID EJECTION HEAD, LIQUID EJECTION APPARATUS, AND MANUFACTURING METHOD OF LIQUID EJECTION HEAD - A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet. | 04-02-2009 |
20090096841 | Liquid ejection head and liquid ejection device - A flow path structure includes a heating element, a barrier layer, a liquid chamber formed by a part of the barrier layer and a pair of walls confronting each other to hold the heating element therebetween and a first individual flow path and a second individual flow path disposed on both the sides of the liquid chamber to communicate with the liquid chamber, a liquid is supplied to the liquid chamber from at least one of first and second individual flow paths, and the distance U between the walls in the liquid chamber and the flow path width W of the first individual flow path are set to satisfy U>W. With this arrangement, a flow path structure can be provided in which a failure in flow paths due to dusts is unlike to occur and which minimizes the influence of bubbles and has almost no uneven ejection. | 04-16-2009 |
20090102887 | LIQUID EJECTION HEAD - A line head that minimizes the influence of strain due to generation of thermal stress and minimizes the influence on printing results even when only the head chips are suddenly heated is provided. First strain-reducing portions | 04-23-2009 |
Patent application number | Description | Published |
20090288728 | Multi-layer tube - A multi-layer tube of thermoplastic resin exhibiting barrier capacity, flexibility, transparency, kink resistance and chemical resistance especially used to transport and supply various types of liquids, which multi-layer tube realizes high steam barrier performance and excels co-extrusion forming performance. There is provided a multi-layer tube comprising at least a flexible elastomer layer, a fluoro resin layer excelling in steam barrier performance and chemical stability and an adhesive resin layer disposed for bonding the layers. This multi-layer tube can find application in medical use including fluid infusion or blood transfusion tubes, use in automobile including cleaning liquid or fuel liquid tubes and use in machine instruments including ink supply tubes of printer units provided in printer, various measuring equipments and observation equipments, etc. | 11-26-2009 |
20100086755 | OXYGEN BARRIER MULTILAYER STRUCTURE, AND MULTILAYER PACKAGING MATERIAL AND MULTILAYER CONTAINER USING SAME - An oxygen barrier multilayer material for containers is developed that selectively shields oxygen from the outside and also shields volatile substances by-produced by oxidation reaction. Provided are a selective oxygen absorbent multilayer structure produced by co-extrusion having an oxygen absorbing layer containing an oxygen absorbing resin composition, an inner barrier layer (A) and an outer barrier layer (C) arranged inside and outside the oxygen absorbing layer, in which the oxygen transmission rate of the outer barrier layer (C) is smaller than the oxygen transmission rate of the inner barrier layer (A), and a multilayer packaging material and a multilayer container, using the selective oxygen absorbent multilayer structure. | 04-08-2010 |
Patent application number | Description | Published |
20090049241 | METHOD FOR CONTROLLING STORAGE SYSTEM, AND STORAGE CONTROL APPARATUS - A method for controlling a storage system including a host computer, and a first and a second storage control apparatuses each receiving a data input/output request from the host computer and executing a data input/output process for a storage device in response to the request, comprises connecting a first communication path between the host computer and the first apparatus; connecting a second communication path between the first apparatus and the second apparatus; receiving by the first apparatus a first data input/output request from the host computer through the first path; when the first apparatus has judged that the first request is not for the first apparatus, transmitting by the first apparatus a second data input/output request corresponding to the first request, to the second apparatus through the second path; and by the second apparatus, receiving the second request and executing a data input/output process corresponding to the second request received. | 02-19-2009 |
20100180077 | Logical Volume Transfer Method and Storage Network System - The present invention transfers replication logical volumes between and among storage control units in a storage system comprising a plurality of storage control units. To transfer replication logical volumes from a storage control unit to a storage control unit, a virtualization device sets a path to the storage control unit. The storage control unit then prepares a differential bitmap in order to receive access requests. When the preparation is completed, the virtualization device makes access requests to the storage control unit. The storage control unit then hands over the access requests to the storage control unit. Subsequently, the storage control unit performs a process so that the access requests are reflected in a disk device and performs an emergency destage of storing data in a cache memory into disk device. When the emergency destage is ended, the storage control unit connects to an external storage control unit and hands over access requests to the external storage control unit. | 07-15-2010 |
20130067183 | Logical Volume Transfer Method and Storage Network System - The present invention transfers replication logical volumes between and among storage control units in a storage system comprising a plurality of storage control units. To transfer replication logical volumes from a storage control unit to a storage control unit, a virtualization device sets a path to the storage control unit. The storage control unit then prepares a differential bitmap in order to receive access requests. When the preparation is completed, the virtualization device makes access requests to the storage control unit. The storage control unit then hands over the access requests to the storage control unit. Subsequently, the storage control unit performs a process so that the access requests are reflected in a disk device and performs an emergency destage of storing data in a cache memory into disk device. When the emergency destage is ended, the storage control unit connects to an external storage control unit and hands over access requests to the external storage control unit. | 03-14-2013 |
20140164698 | Logical Volume Transfer Method and Storage Network System - The present invention transfers replication logical volumes between and among storage control units in a storage system comprising storage control units. To transfer replication logical volumes from a storage control unit to a storage control unit, a virtualization device sets a path to the storage control unit. The storage control unit prepares a differential bitmap in order to receive access requests. When the preparation completes, the virtualization device makes access requests to the storage control unit. The storage control unit hands over the access requests to the storage control unit. The storage control unit performs a process so that the access requests are reflected in a disk device and performs an emergency destage of storing data in a cache memory into disk device. When the emergency destage ends, the storage control unit connects to an external storage control unit and hands over access requests to the external storage control unit. | 06-12-2014 |