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Chweefern Ee, Tiong Bahru SG
| Patent application number | Description | Published |
|---|---|---|
| 20090313426 | Buffer Management for Increased Write Speed in Large Sector Data Storage Device - An intelligent write command routine improves the operational efficiency of a data storage device (DSD) by avoiding media access of the disk when a logical block address (LBA) and the physical sector are unaligned, thus reducing write time. When a write command is received by the DSD from the host, the intelligent write command routine maintains the read data of the read buffer, instead of clearing the read buffer and performing a read of the target sector on the disk per standard protocol. The intelligent write command copies the necessary adjacent sector data from the read buffer as a data patch to the write buffer to splice around the write data received with the write command. Following each write command, the data written to the disk in the write buffer is copied to the read buffer. The read buffer is maintained with the most current data on the disk and does not need to be flushed unless the LBA of the write command is beyond the data ranges stored in the read buffer. | 12-17-2009 |
Eng Tien Ee, Kedah MY
| Patent application number | Description | Published |
|---|---|---|
| 20090083022 | EMBEDDED BUS EMULATION - A bus emulation device in accordance with one aspect of the present description includes an embedded microcontroller and a nonvolatile memory carried on a body. The memory contains firmware which includes boot code adapted to boot the microcontroller to operate in one of a plurality of dedicated operating modes in response to a mode switch. These dedicated operating modes include a learning mode in which bus signals generated by other bus devices are recorded in the nonvolatile memory, and an emulation mode in which recorded bus signals are retransmitted over the bus in response to received signals, to emulate a bus device. Other aspects are described and claimed. | 03-26-2009 |
Kim Hung Jeremy Ee, Singapore SG
| Patent application number | Description | Published |
|---|---|---|
| 20100066497 | TRACKING SYSTEM | 03-18-2010 |
Wooyong Ee, Louisville, KY US
| Patent application number | Description | Published |
|---|---|---|
| 20110234427 | COMMUNICATION SYSTEM INCLUDING TELEMETRIC DEVICE FOR A VEHICLE CONNECTED TO A CLOUD SERVICE - A telemetric device for a vehicle includes a location determining device arranged to determine the vehicle's location and a transmitting device arranged to continuously or nearly continuously transmit location data concerning the vehicle in real-time or near real-time. The transmission of the location data is not based on a condition of the vehicle and is without prompting by a user. | 09-29-2011 |
| 20110238647 | SYSTEM FOR EVENT-BASED INTELLIGENT-TARGETING - An event-based intelligent targeting engine is capable of delivering highly relevant content, including, but not limited to, advertisements, alerts, messages, notifications, warnings, signals, machine-to-machine (M2M) telemetry, entertainment/media, and any communications thereof, etc. based on real-time situations (i.e., observed events) of a user as well as, historical preferences both explicitly stated or observed in behavior including demographics, psychographics, and sociographics. | 09-29-2011 |
Yik Khoon Ee, Bethlehem, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20090162963 | GALLIUM NITRIDE-BASED DEVICE AND METHOD - A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect. | 06-25-2009 |
| 20090315013 | EFFICIENT LIGHT EXTRACTION METHOD AND DEVICE - A tight emitting device comprises at least one p-type layer and at least one n-type layer and a microlens array surface. A method for improving light efficiency of a light emitting device, comprises depositing polystyrene microspheres by rapid convection deposition on surface of light emitting device; depositing a monolayer of close-packed SIO | 12-24-2009 |
| 20100327783 | STAGGERED COMPOSITION QUANTUM WELL METHOD AND DEVICE - A light emitting device comprising a staggered composition quantum well. | 12-30-2010 |
Yik-Khoon Ee, Mountain View, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110147703 | ABBREVIATED EPITAXIAL GROWTH MODE (AGM) METHOD FOR REDUCING COST AND IMPROVING QUALITY OF LEDs AND LASERS - The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates. | 06-23-2011 |
| 20110155999 | SEMICONDUCTOR LIGHT-EMITTING DEVICES HAVING CONCAVE MICROSTRUCTURES PROVIDING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR PRODUCING SAME - A conventional semiconductor LED is modified to include a microlenslayer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness. | 06-30-2011 |
Yong Chiang Ee, Singapore SG
| Patent application number | Description | Published |
|---|---|---|
| 20100044869 | RELIABLE INTERCONNECTS - A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with a dielectric layer formed thereon. The dielectric layer having a conductive line disposed in an upper portion of the dielectric layer. The substrate is processed to produce a top surface of the dielectric layer that is not coplanar with a top surface of the conductive line to form a stepped topography. | 02-25-2010 |
| 20100314774 | RELIABLE INTERCONNECTS - A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with a dielectric layer formed thereon. The dielectric layer having a conductive line disposed in an upper portion of the dielectric layer. The substrate is processed to produce a top surface of the dielectric layer that is not coplanar with a top surface of the conductive line to form a stepped topography. | 12-16-2010 |