Patent application number | Description | Published |
20130029495 | REMOVAL OF SILICON NITRIDES DURING MANUFACTURING OF SEMICONDUCTOR DEVICES - A method to remove excess material during the manufacturing of semiconductor devices includes providing a semiconductor wafer comprising silicon nitride deposited thereon and applying a chemical solution to the semiconductor wafer, wherein the chemical solution comprises a combination of sulfuric acid and deionized water. | 01-31-2013 |
20130137276 | METHOD AND APPARATUS FOR PREVENTING NATIVE OXIDE REGROWTH - A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged. | 05-30-2013 |
20130145587 | VERTICALLY RETRACTABLE FLOW CELL SYSTEM - A system for combinatorial processing is provided. The system includes a plurality of reactor cells. Each of the plurality of reactor cells includes a vertical recess extending along a length of the outer surface of the plurality of reactor cells. The vertical recess is operable to receive a vertical rail. The system also includes a plurality of horizontal rails extending between rows of the plurality of reactor cells. Each of the plurality of horizontal rails has a member slidably mounted thereon. The member is coupled to the vertical rail thereby enabling independent horizontal and vertical movement for each of the plurality of reactor cells. | 06-13-2013 |
20140094037 | Method and Apparatus for Preventing Native Oxide Regrowth - A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged. | 04-03-2014 |
20140252565 | Nucleation Interface for High-K Layer on Germanium - A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO | 09-11-2014 |
20150021772 | Mixed-metal barrier films optimized by high-productivity combinatorial PVD - A barrier film including at least one ferromagnetic metal (e.g., nickel) and at least one refractory metal (e.g., tantalum) effectively blocks copper diffusion and facilitates uniform contiguous (non-agglomerating) deposition of copper layers less than 100 Å thick. Methods of forming the metal barrier include co-sputtering the component metals from separate targets. Using high-productivity combinatorial (HPC) apparatus and methods, the proportions of the component metals can be optimized. Gradient compositions can be deposited by varying the plasma power or throw distance of the separate targets. | 01-22-2015 |
20150179508 | Tantalum-Based Copper Barriers and Methods for Forming the Same - Embodiments described herein provide tantalum-based copper barriers and methods for forming such barriers. A dielectric body is provided. A first layer is formed above the dielectric body. The first layer includes tantalum. A second layer is formed above the first layer. The second layer includes manganese. A third layer is formed above the second layer. The third layer includes copper. | 06-25-2015 |