| Patent application number | Description | Published |
|---|
| 20080257743 | METHOD OF MAKING AN INTEGRATED CIRCUIT INCLUDING ELECTRODEPOSITION OF METALLIC CHROMIUM - A method of making an integrated circuit including a composition of matter for electrodepositing of chromium is disclosed. One embodiment provides a bath having a solution of a chromium salt in a substantially anhydrous organic solvent, to uses of certain chromium salts for electrodepositing and to processes for electrodepositing chromium. | 10-23-2008 |
| 20080257744 | METHOD OF MAKING AN INTEGRATED CIRCUIT INCLUDING ELECTRODEPOSITION OF ALUMINIUM - A method of making an integrated circuit including composition of matter for electrodepositing of aluminium is disclosed. One embodiment includes a bath having a solution of selected aluminium salts in a substantially anhydrous organic solvent, to uses of certain aluminium salts for electrodepositing and to processes for electrodepositing aluminium. | 10-23-2008 |
| 20080315423 | SEMICONDUCTOR DEVICE - A semiconductor device includes a carrier, a chip including a first face having a contact area, where the chip is attached to the carrier such that the contact area faces away from the carrier, a copper connector configured for attachment to the contact area, and a solder material configured to couple the copper connector to the contact area. | 12-25-2008 |
| 20090108423 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a leadframe defining a die pad, a chip electrically coupled to the die pad, encapsulation material covering the chip and the die pad, and a plurality of lead ends exposed relative to the encapsulation material and configured for electrical communication with the chip, and a nitrogen-containing hydrocarbon coating disposed over at least the lead ends of the leadframe, where the hydrocarbon coating is free of metal particles. | 04-30-2009 |
| 20090129971 | LEAD-FREE SOFT SOLDER - The invention relates to a soft solder which includes the alloying constituents bismuth and two of the three metals silver, copper and nickel, wherein bismuth forms between 20% by weight and 99.8% by weight of the alloy, silver forms between 0.1% by weight and 50% by weight of the alloy, copper forms between 0.1% by weight and 30% by weight of the alloy and nickel forms between 0.1% by weight and 30% by weight of the alloy. | 05-21-2009 |
| 20100059857 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device. One embodiment provides a metal carrier. A semiconductor chip is provided. A porous layer is produced at a surface of at least one of the carrier and the semiconductor chip. The semiconductor chip is placed on the carrier. The resulting structure is heated until the semiconductor chip is attached to the carrier. | 03-11-2010 |
| 20110107595 | SEMICONDUCTOR DEVICE - A method of electrically interconnecting a semiconductor chip to another electronic device including providing a carrier including contact pins and a chip attached to the carrier, the chip having a copper contact pad that faces away from the carrier, extending a copper electrical connector between the contact pins and the contact pad, and diffusion soldering the copper electrical connector to the active area with a solder material including tin to form a solder connection including a contiguous bronze coating disposed between and in direct contact with both the copper electrical connector and the contact pad. | 05-12-2011 |
| 20110127314 | BONDING MATERIAL WITH EXOTHERMICALLY REACTIVE HETEROSTRUCTURES - A bonding material including a meltable joining material and a plurality of heterostructures distributed throughout the meltable joining material, the heterostructures comprising at least a first material and a second material capable of conducting a self-sustaining exothermic reaction upon initiation by an external energy to generate heat sufficient to melt the meltable joining material. | 06-02-2011 |
