Patent application number | Description | Published |
20080217635 | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 09-11-2008 |
20080258168 | Semiconductor light emitting device packages and methods - A submount for a light emitting device package includes a rectangular substrate. A first bond pad and a second bond pad are on a first surface of the substrate. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode thereon. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are a the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. Related LED packages and methods of forming LED packages are disclosed. | 10-23-2008 |
20100140636 | Light Emitting Diode with Improved Light Extraction - A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors. | 06-10-2010 |
20100140637 | Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration - A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure. | 06-10-2010 |
20100252851 | LED PACKAGE WITH INCREASED FEATURE SIZES - A light emitter package having increased feature sizes for improved luminous flux and efficacy. An emitter chip is disposed on a submount with a lens that covers the emitter chip. In some cases, the ratio of the width of the light emitter chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to emit light more efficiently. Some packages include submounts having dimensions greater than 3.5 mm square used in conjunction with larger emitter chips. Materials having higher thermal conductivities are used to fabricate the submounts, providing the package with better thermal management. | 10-07-2010 |
20110008922 | METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 01-13-2011 |
20110284903 | Semiconductor Light Emitting Device Packages and Methods - A submount for a light emitting device package includes a substrate. A first bond pad and a second bond pad are on a first surface of the substrate. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode thereon. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are a the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. Related LED packages and methods of forming LED packages are disclosed. | 11-24-2011 |
20120153343 | METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 06-21-2012 |
20130119418 | METHODS OF FORMING OPTICAL CONVERSION MATERIAL CAPS AND LIGHT EMITTING DEVICES INCLUDING PRE-FORMED OPTICAL CONVERSION MATERIAL CAPS - A method of forming can be provided by applying an optical conversion material to a mold to form a unitary layer of optical conversion material and removing the unitary layer of optical conversion material from the mold. | 05-16-2013 |
20130146904 | Optoelectronic Structures with High Lumens Per Wafer - An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens. | 06-13-2013 |
20130292639 | LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad. | 11-07-2013 |
20140256072 | Semiconductor Light Emitting Device Packages and Methods - A submount for a light emitting device package includes a substrate with a first bond pad and a second bond pad on a first surface. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are on the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. | 09-11-2014 |
Patent application number | Description | Published |
20120193651 | LIGHT EMITTING DEVICES, SYSTEMS, AND METHODS - Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device. | 08-02-2012 |
20120326159 | LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY - Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip. | 12-27-2012 |
20130214666 | SOLID STATE LAMP WITH LIGHT DIRECTING OPTICS AND DIFFUSER - Lamps and bulbs are disclosed generally comprising different combinations and arrangements of a light source, a reflective optical element, and a separate diffusing layer. This arrangement allows for the fabrication of lamps and bulbs that are efficient, reliable and cost effective and can provide an essentially omni-directional emission pattern, even with a light source comprised of an arrangement of LEDs. The lamps according to the present invention can also comprise thermal management features that provide for efficient dissipation of heat from the LEDs, which in turn allows the LEDs to operate at lower temperatures. The lamps can also comprise optical elements to help change the emission pattern from the generally directional pattern of the LEDs to a more omni-directional pattern. | 08-22-2013 |
20140048822 | LIGHT EMITTING DIODES INCLUDING CURRENT SPREADING LAYER AND BARRIER SUBLAYERS - Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers. | 02-20-2014 |
20140167065 | LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY - Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror, such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip. | 06-19-2014 |
20140217443 | CHIP WITH INTEGRATED PHOSPHOR - This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed. | 08-07-2014 |
20140268728 | LIGHT EMITTER COMPONENTS, SYSTEMS, AND RELATED METHODS - Light emitter components, systems, and related methods having improved optical efficiency and a lower manufacturing cost are disclosed. In one aspect, a light emitter component can include a substrate having an elongated body and first and second ends. At least a first trace and a second trace can be provided on the substrate. In some aspects, the first trace can be disposed proximate the first end of the substrate and the second trace can be disposed proximate the second end of the substrate, with no other portion of the first trace or second trace being disposed between the first and second ends of the substrate. In some aspects, a string of LED chips can be provided on the substrate. The string of LED chips can be disposed between the first and second ends of the substrate. Angled traces, gaps and light emitter components can also be provided in some aspects. | 09-18-2014 |
Patent application number | Description | Published |
20080197378 | Group III Nitride Diodes on Low Index Carrier Substrates - A light emitting diode is disclosed that includes a layer of p-type Group III nitride and a layer of n-type Group III nitride on a transparent carrier substrate that has an index of refraction lower then the layer of Group III nitride adjacent the carrier substrate. A layer of transparent adhesive joins the transparent substrate to the Group III nitride layers, and the transparent adhesive has an index of refraction lower than the layer of Group III nitride. The diode includes respective ohmic contacts to the p-type Group III nitride layer and to the n-type Group III nitride layer. | 08-21-2008 |
20080210971 | NICKEL TIN BONDING SYSTEM WITH BARRIER LAYER FOR SEMICONDUCTOR WAFERS AND DEVICES - A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer. | 09-04-2008 |
20080258161 | Transparent ohmic Contacts on Light Emitting Diodes with Carrier Substrates - A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure. | 10-23-2008 |
20100006883 | LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR - Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers. | 01-14-2010 |
20100276700 | EXTERNAL EXTRACTION LIGHT EMITTING DIODE BASED UPON CRYSTALLOGRAPHIC FACETED SURFACES - A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride. | 11-04-2010 |
20110180839 | Nickel Tin Bonding System with Barrier Layer for Semiconductor Wafers and Devices - A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer. | 07-28-2011 |
20120305939 | LIGHT EMITTING DIODES INCLUDING BARRIER SUBLAYERS - Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers. | 12-06-2012 |
Patent application number | Description | Published |
20120287601 | HIGH EFFICIENCY LED LAMP - A high-efficiency LED lamp is disclosed. Embodiments of the present invention provide a high-efficiency, high output solid-state lamp. The lamp includes an LED assembly, and an optical element or diffuser disposed to receive light from the LED assembly. The optical element includes a primary exit surface, wherein the primary exit surface is at least about 1.5 inches from the LED assembly. In example embodiments, the optical element is roughly cylindrical in shape, but can take other shapes and be made from various materials. An LED lamp according to some embodiments of the invention has an efficiency of at least about 150 lumens per watt. In some embodiments, the lamp has a light output of at least 1200 lumens. In some embodiments, the LED lamp produces light with a color rendering index (CRI) of at least 90 and a warm white color. | 11-15-2012 |
20120287619 | HIGH EFFICIENCY LED LAMP - A high-efficiency LED lamp is disclosed. Embodiments of the present invention provide a high-efficiency, high output solid-state lamp. The lamp includes an LED assembly, and an optical element or diffuser disposed to receive light from the LED assembly. The optical element includes a primary exit surface for the light, wherein the primary exit surface is at least about 1.5 inches from the LED assembly. In example embodiments, the optical element is roughly cylindrical in shape. An LED lamp according to some embodiments of the invention has an efficiency of at least 150 lumens per watt. In some embodiments, the lamp has a light output of at least 1200 lumens. In some embodiments, the LED lamp produces light with a color rendering index (CRI) of at least 90 and a correlated color temperature of from 2800 to 3000 K. | 11-15-2012 |
20130265772 | OPTICAL ELEMENT INCLUDING TEXTURING TO CONTROL BEAM WIDTH AND COLOR MIXING - A method for providing an optical element may include providing an optical feature in the optical element that spreads or distributes light passing through the optical element. The method may also include providing a texturing in at least a portion of the optical feature of the optical element. | 10-10-2013 |
20130271981 | LED LAMP - A lamp has an optically transmissive enclosure and a base. A tower extends from the base into the enclosure and supports an LED assembly in the enclosure. The LED assembly comprises a plurality of LEDs operable to emit light when energized through an electrical path from the base. The tower and the LED assembly are arranged such that the plurality of LEDs are disposed about the periphery of the tower in a band and face outwardly toward the enclosure to create a source of the light that appears as a glowing filament. The tower forms part of a heat sink that transmits heat from the LED assembly to the ambient environment. The LED assembly has a three-dimensional shape. An electrical interconnect connects a conductor to the heat sink where the conductor is in the electrical path between the LED assembly and the base. | 10-17-2013 |
20130271987 | GAS COOLED LED LAMP - A gas cooled LED lamp and submount is disclosed. The centralized nature of the LEDs allows the LEDs to be configured near the central portion of the optical envelope of the lamp. In example embodiments, the LEDs can be cooled and/or cushioned by a gas in thermal communication with the LED array to enable the LEDs to maintain an appropriate operating temperature for efficient operation and long life. In some embodiments, the LED assembly is mounted on a glass stem. In some embodiments a thermal resistant path is created that prevents overtemperature of the LED array during the making of the lamp. In some embodiments the LED assembly comprises a lead frame and/or metal core board that is bent into a three-dimensional shape to create a desired light pattern in the enclosure or an extruded submount formed into a three-dimensional shape. | 10-17-2013 |
20130271989 | GAS COOLED LED LAMP - In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen. | 10-17-2013 |
20130271990 | GAS COOLED LED LAMP - In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen. | 10-17-2013 |
20130271991 | LED LAMP - A lamp has an optically transmissive enclosure and a base. A tower extends from the base into the enclosure and supports an LED assembly in the enclosure. The LED assembly comprises a plurality of LEDs operable to emit light when energized through an electrical path from the base. The tower and the LED assembly are arranged such that the plurality of LEDs are disposed about the periphery of the tower in a band and face outwardly toward the enclosure to create a source of the light that appears as a glowing filament. The tower forms part of a heat sink that transmits heat from the LED assembly to the ambient environment. The LED assembly has a three-dimensional shape. An electrical interconnect connects a conductor to the heat sink where the conductor is in the electrical path between the LED assembly and the base. | 10-17-2013 |
20130279175 | LED LAMP - A lamp has an optically transmissive enclosure and a base defining a longitudinal axis of the lamp that extends from the base to the free end of the enclosure. An LED assembly is positioned in the optically transmissive enclosure. The LED assembly includes LEDs operable to emit light when energized through an electrical path from the base. The LED assembly is arranged such that the plurality of LEDs face perpendicularly to the longitudinal axis of the lamp. The emission profile of the LEDs being at least 120 degrees FWHM. | 10-24-2013 |
20130294092 | LED LAMP - A lamp has an optically transmissive enclosure and a base defining a longitudinal axis of the lamp extending from the base to the free end of the enclosure. A heat sink is at least partially located in the enclosure and includes a tower that extends along the longitudinal axis of the lamp. An LED assembly is positioned in the optically transmissive enclosure. The LED assembly comprises a lead frame circuit or a flex circuit where LEDs are attached to the circuits. The lead frame and flex circuit are formed into a three-dimensional shape and are thermally coupled to the tower. | 11-07-2013 |
20130301252 | GAS COOLED LED LAMP - In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. A board supports lamp electronics for the lamp and is located in the enclosure. The LED array is mounted to the board and LEDs are mounted on a submount formed to have a three dimensional shape. The board is electrically coupled to the LED array and the submount may be thermally coupled to the gas for dissipating heat from the plurality of LEDs. | 11-14-2013 |
20140036497 | LED LAMP - A lamp comprises an enclosure comprising a reflector and a lens where the reflector is made of thermally conductive material. A base is coupled to the enclosure. An LED is located in the enclosure and emits light when energized through an electrical path from the base. A heat sink comprises a heat dissipating portion that may be at least partially exposed to the ambient environment and a heat conducting portion that is thermally coupled to the LED. The reflector is thermally coupled to the heat sink and is exposed to the exterior of the lamp such that heat from the heat sink may be dissipated to the ambient environment at least partially through the reflector. | 02-06-2014 |
20140191653 | PROTECTIVE DIFFUSIVE COATING FOR LED LAMP - The present disclosure discloses LED lamps and enclosures comprising light transparent polymer coatings comprising light diffusing particles as well as methods for providing improved luminous intensity distribution. More particularly, the present disclosure relates to enclosures comprising light-transparent polymer coatings comprising a light diffusing particles on at least one surfaces of the enclosure of an LED lamp. | 07-10-2014 |
20140239794 | GAS COOLED LED LAMP - In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen. | 08-28-2014 |
20140268692 | DOOR FRAME TROFFER - An indirect troffer. Embodiments of the present invention provide a troffer-style fixture that is particularly well-suited for use with solid state light sources, such as LEDs. The troffer comprises light bars mounted proximate to a back reflector. A back reflector defines a reflective interior surface of the lighting troffer. To facilitate thermal dissipation, the light bar can act as a heat sink. A portion of the heat sink is exposed to the ambient room environment while another portion functions as a mount surface for the light sources that faces the back reflector. One or more light sources disposed along the light bar mount surface emit light into an interior cavity where it can be mixed and/or shaped prior to emission. In some embodiments, one or more lens plates extend from the light bar out to the back reflector. | 09-18-2014 |
Patent application number | Description | Published |
20090161356 | LIGHTING DEVICE AND METHOD OF LIGHTING - There is provided a lighting device which emits light with an wall plug efficiency of at least 85 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more luminescent material. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with a wall plug efficiency of at least 85 lumens per watt. | 06-25-2009 |
20110182065 | LIGHTING DEVICE WITH MULTI-CHIP LIGHT EMITTERS, SOLID STATE LIGHT EMITTER SUPPORT MEMBERS AND LIGHTING ELEMENTS - A lighting device in which a solid state light emitter in a first multi-chip light emitter is spatially offset relative to a solid state light emitter in a second multi-chip light emitter. A lighting device comprising first, second and third multi-chip light emitters, in which any solid state light emitter in the second multi-chip light emitter that is spatially offset relative to a first solid state light emitter on the first multi-chip light emitter by less than 10 degrees emits light of a hue that differs from the hue of light emitted by the first solid state light emitter by more than seven MacAdam ellipses. A solid state light emitter support member comprising a center region and at least first, second and third protrusions extending from the center region. A lighting device comprising at least a first housing member, and means for emitting substantially uniform light. | 07-28-2011 |
20120280621 | Temperature Responsive Control For Lighting Apparatus Including Light Emitting Devices Providing Different Chromaticities And Related Methods - A lighting apparatus may include a plurality of light emitting devices, a temperature sensor, and a compensation circuit. The plurality of light emitting devices may include a first light emitting device configured to emit light having a first chromaticity, a second light emitting device configured to emit light having a second chromaticity different than the first chromaticity, and a third light emitting device configured to emit light having the second chromaticity. Moreover, the first, second, and third light emitting devices may be electrically coupled in series. The temperature sensor may be configured to generate a temperature sense signal responsive to heat generated by at least one of the plurality of light emitting devices. The compensation circuit may be coupled to the third light emitting device, with the compensation circuit being configured to vary a level of electrical current through the third light emitting device relative to the electrical current through the first and second light emitting devices responsive to the temperature sense signal. Related methods are also discussed. | 11-08-2012 |
20130201670 | MULTIPLE PANEL TROFFER-STYLE FIXTURE - Lighting fixtures are described utilizing a plurality of light sources, or light engines, which are mounted together in a modular fashion in the light fixture opening. In some embodiments, the plurality of light sources can comprise lighting panels that together form the overall fixture light source. The present invention is particularly applicable to troffer-style lighting fixtures that can be arranged with a plurality of lighting panels arranged in the troffer opening to illuminate the space below the troffer. Embodiments of the present invention can also utilize solid state light sources for the lighting panels, with some embodiments utilizing light emitting diodes (LEDs). | 08-08-2013 |
20130201679 | LIGHTING DEVICE AND METHOD OF INSTALLING LIGHT EMITTER - A lighting device comprising a junction box, a trim element and a solid state light emitter, at least a portion of a space defined by regions of the trim element within a space defined by regions of the junction box, the light emitter within the trim element space. A lighting device comprising a trim element (with at least two regions) and a solid state light emitter, in which at least a first part of the first region can be positioned in a first space with the second region outside the first space, the light emitter within the first part. A lighting device, comprising a trim element (which comprises at least two regions), part of an exterior of which defines a first space, at least a first part of the first region within the first space, a solid state light emitter within the first part. Methods of installing a light emitter. | 08-08-2013 |
20130250567 | MODULAR INDIRECT TROFFER - A modular troffer-style lighting fixture. The fixture is particularly well-suited for use with solid state light sources, such as LEDs. Embodiments comprise a pan structure designed to house one or more modular light engine units within a central opening. Each light engine unit includes a reflective cup that can house several light sources on an interior mount surface. The cup is positioned proximate to a back reflector such that its open end faces a portion of the back reflector. The back reflector is shaped to define an interior chamber where light can be mixed and redirected. At least one elongated leg extends away from the reflective cup toward an edge of said back reflector. The leg(s) are used to mount the reflective cup relative to the back reflector and may also be used as a heat sink and/or an additional mount surface for light sources. | 09-26-2013 |
20130265750 | LIGHTING DEVICE AND METHOD OF INSTALLING LIGHT EMITTER - A lighting device configured to be held relative to a space extending from an opening in a first surface. A distance between first and second emitters and/or a dimension of a lens is/are larger than a largest dimension of the opening and/or a largest dimension of a power supply. Also, a bracket comprising a body member and at least two mounting clips, the body member configured to be attached to a lighting device, each mounting clip pivotable about respective pivot axes at least from a first position, where a first end region of the clip does not extend farther from an axis of the body member than all portions of the body member, to a second position, where the first end region of the clip extends farther from the axis of the body member than all portions of the body member. Also, a lighting device comprising a removable bracket. | 10-10-2013 |
20130265751 | LENSED TROFFER-STYLE LIGHT FIXTURE - Troffer-style lighting fixtures are disclosed having troffer housing with reflective regions, and respective light emitting diode (LED) arrays mounted in the reflective regions. The LED arrays are arranged to emit out of said troffer housing to illuminate a room below the troffer fixture. The LED arrays can be driven by an elevated drive signal to produce a relatively high luminous flux. The light fixtures according to the present invention can have lenses and diffusers over the arrays arranged to mix and disperse light from the light source to reduce or eliminate hot spots and to reduce or eliminate the appearance of the different LED colors. A plurality of first diffusers are included, each of which is over a respective one of the LED arrays. A second diffuser is included over the first diffusers, with the LED light passing through the first and second diffusers prior to emitting from the lighting fixture. The first and second diffusers can have shapes, surfaces or materials to disperse and/or mix the LED light as it emits from said fixtures. | 10-10-2013 |
20130279161 | PARABOLIC TROFFER-STYLE LIGHT FIXTURE - A parabolic troffer-style light fixture. The fixtures are sized to fit in, mount to, or suspend from a ceiling, such as being mounted in a conventional ceiling T-grid, for example. The fixture comprises a troffer housing that may be sized to fit in or rest on the T-grid, with the housing having a shape and size similar to those used for conventional fluorescent troffer lighting fixtures. The fixtures comprise a plurality of reflective louvers arranged in a grid that divides the fixture open end into a number of fixture regions with at least one functional louver providing a back side mount surface for light sources, for example, light emitting diodes. The functional louver mount surface faces a reflective back surface designed to redirect impinging light out of the fixture and into the lighted area. | 10-24-2013 |