| Patent application number | Description | Published |
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| 20080217635 | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 09-11-2008 |
| 20080258168 | Semiconductor light emitting device packages and methods - A submount for a light emitting device package includes a rectangular substrate. A first bond pad and a second bond pad are on a first surface of the substrate. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode thereon. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are a the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. Related LED packages and methods of forming LED packages are disclosed. | 10-23-2008 |
| 20100140636 | Light Emitting Diode with Improved Light Extraction - A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors. | 06-10-2010 |
| 20100140637 | Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration - A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure. | 06-10-2010 |
| 20100252851 | LED PACKAGE WITH INCREASED FEATURE SIZES - A light emitter package having increased feature sizes for improved luminous flux and efficacy. An emitter chip is disposed on a submount with a lens that covers the emitter chip. In some cases, the ratio of the width of the light emitter chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to emit light more efficiently. Some packages include submounts having dimensions greater than 3.5 mm square used in conjunction with larger emitter chips. Materials having higher thermal conductivities are used to fabricate the submounts, providing the package with better thermal management. | 10-07-2010 |
| 20110008922 | METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 01-13-2011 |
| Patent application number | Description | Published |
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| 20080197378 | Group III Nitride Diodes on Low Index Carrier Substrates - A light emitting diode is disclosed that includes a layer of p-type Group III nitride and a layer of n-type Group III nitride on a transparent carrier substrate that has an index of refraction lower then the layer of Group III nitride adjacent the carrier substrate. A layer of transparent adhesive joins the transparent substrate to the Group III nitride layers, and the transparent adhesive has an index of refraction lower than the layer of Group III nitride. The diode includes respective ohmic contacts to the p-type Group III nitride layer and to the n-type Group III nitride layer. | 08-21-2008 |
| 20080210971 | NICKEL TIN BONDING SYSTEM WITH BARRIER LAYER FOR SEMICONDUCTOR WAFERS AND DEVICES - A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer. | 09-04-2008 |
| 20080258161 | Transparent ohmic Contacts on Light Emitting Diodes with Carrier Substrates - A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure. | 10-23-2008 |
| 20100006883 | LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR - Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers. | 01-14-2010 |
| 20100276700 | EXTERNAL EXTRACTION LIGHT EMITTING DIODE BASED UPON CRYSTALLOGRAPHIC FACETED SURFACES - A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride. | 11-04-2010 |
