Patent application number | Description | Published |
20130057464 | ELECTRO-PHORETIC DISPLAY DEVICE AND FABRICATING METHOD THEREOF - An electro-phoretic display device includes a first substrate, an active elements array, a driving circuit, a conductive flexible board, an electro-phoretic layer and a second substrate. The first substrate has a first surface defining a display area and a circuit area, and a second surface. The active elements array is disposed within the display area and the driving circuit is disposed within the circuit area and electrically connected to the active elements array. The conductive flexible board is partially disposed at the first substrate and electrically connected to the driving circuit. The electro-phoretic layer and the second substrate are sequentially disposed on the active elements array and the driving circuit. A fabricating method of electro-phoretic display device is also disclosed. | 03-07-2013 |
20130076249 | ELECTRONIC DEVICE - An electronic device including a body and a light source module is provided. The body has a side on which an unstable display is disposed and another side on which a bi-stable display is disposed. The light source module is arranged inside the body and configured to provide a light source to one or none of the unstable display and the bi-stable display. | 03-28-2013 |
20130099220 | Transistor Structure - A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector. | 04-25-2013 |
20130146868 | FIELD EFFECT TRANSISTOR - A field effect transistor (FET) is provided. The active layer of this FET is composed of at least two different amorphous metal oxide semiconductor layer stacked together. Therefore, the two opposite surfaces of the active layer can have different band gap values. | 06-13-2013 |
20130153891 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a thin film transistor, which includes a metal oxide semiconductor layer, an insulating layer, a gate electrode, a source electrode and a drain electrode. The metal oxide semiconductor layer includes a channel region having at least one first region and a second region. The first region has an oxygen vacancy concentration greater than an oxygen vacancy concentration of the second region. The second region surrounds the first region. A method for manufacturing the thin film transistor is disclosed as well. | 06-20-2013 |
20130181605 | DISPLAY PANEL - A display panel includes a substrate, a plurality of first signal lines, a plurality of second signal lines, a plurality of pixel units, a plurality of transmitting lines, and a driving chip. The transmitting lines are disposed on the substrate and electrically connected to the second signal lines. The driving chip includes a plurality of first pins, a plurality of second pins, and a driving circuit. The first pins are electrically connected to the first signal lines, and the second pins are electrically connected to the transmitting lines. The first pins and the second pins are disposed alternately and evenly, such that the first signal lines and the transmitting lines do not intersect each other. The transmitting lines are disposed on the substrate evenly. | 07-18-2013 |
20130200362 | THIN FILM TRANSISTOR - A thin film transistor (TFT) is provided, which includes a gate, a semiconductor layer, an insulation layer, a source and a drain. The semiconductor layer has a first end and a second end opposite to the first end. The insulation layer is disposed between the gate and the semiconductor layer. The source clamps the first end of the semiconductor layer and the drain clamps the second end of the semiconductor layer. | 08-08-2013 |
20130200381 | Display Panel Circuit Structure - A display panel circuit structure includes a substrate, a first metal layer, a second metal layer, and a third metal layer. The first metal layer is disposed on the substrate. The second metal layer is disposed on the first metal layer and electrically connected to the first metal layer, in which the second metal layer has a pad area and a trace area connected to the pad area. The line width of the second metal layer in the pad area is greater than the line width of the second metal layer in the trace area. The third metal layer is disposed on the second metal layer, in which the third metal layer does not overlap the second metal layer n the trace area. | 08-08-2013 |
20130201548 | ELECTRONIC INK DISPLAY DEVICE - An electronic-ink display device includes a cover plate, an electronic-ink display, a frame, and a water-proof glue. The electronic-ink display is disposed on the cover plate. The frame is disposed on a periphery area of the cover plate and surrounds the electronic-ink display to form a circular trench. Then, the water-proof glue fills the circular trench. | 08-08-2013 |