Dyson
Andrew Dyson, Eppstein DE
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20090218378 | CARGO SPACE FLOOR HAVING A SKI RACK AND MOTOR VEHICLE HAVING SUCH A CARGO SPACE FLOOR - A cargo space floor is provided for a motor vehicle and a ski rack is positioned on the cargo space floor that may be pivoted from a lower nonuse position around a first pivot axis into an upper usage position, in which a ski may be fastened to the ski rack. The ski rack has at least one first support strut and one second support strut that are spaced apart from one another and have openings aligned with one another for receiving a ski. A motor vehicle is also provided having such an advantageous cargo space floor. | 09-03-2009 |
John Kenneth Dyson, Victoria AU
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20120159889 | INTERLOCKING MASONRY BLOCK - In one aspect the invention provides an interlocking masonry block including a rear face, a front face, at least one aperture extending vertically through said block for receiving a flowable concrete mixture used in core filling, and at least one generally vertical side being registerable with an opposing side of an abutting block to inhibit movement of said flowable concrete out through a vertical interface between said blocks. | 06-28-2012 |
20120167516 | METHOD OF FORMING PROTRUSIONS ON A MASONRY BLOCK - A method and mould for forming upwardly extending protrusions on a wall masonry block during moulding of the block. The method including pouring a flowable concrete mixture into a lower mould to form a body of said wall masonry block, applying a head shoe to form an upper section of said wall masonry block, the head shoe including a first mould portion for forming an upper bedding face of said block and a second mould portion for forming at least one protrusion extending upwardly from the upper bedding face, the head shoe being shaped to improve the flow of said concrete mixture into the second mould portion during compression of the block, and removing the masonry block from the mould. | 07-05-2012 |
Maja Dyson, Dunboyne IE
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20100140502 | OXYGEN SENSITIVE MATERIAL, SENSORS, SENSOR SYSTEMS WITH IMPROVED PHOTOSTABILITY - An oxygen sensitive polymeric material with enhanced photostability, comprising an oxygen sensitive indicator and photostabilizer incorporated into an oxygen permeable polymeric material is provided. The oxygen sensitive indicator can be, but is not limited to, [Ru(L1)(L2)(L3)] | 06-10-2010 |
20100143675 | INKS AND COATINGS FOR THE PRODUCTION OF OXYGEN SENSITIVE ELEMENTS WITH IMPROVED PHOTOSTABILITY - An oxygen sensitive ink or coating with enhanced photostability, comprising an oxygen sensitive indicator, a photostabilizer, an oxygen permeable binder and a solvent mixture is provided. The oxygen sensitive indicator is selected from, but not limited to [Ru(L1)(L2)(L3)] | 06-10-2010 |
Maja Dyson, Co. Meath IE
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20080271517 | Non-Invasive Gas Monitoring for Manufactured Multiple Paned Glass Units - A system for determining gas content in an enclosed atmosphere ( | 11-06-2008 |
Mark Dyson, Singapore SG
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20080237642 | Method to Reduce Boron Penetration in a SiGe Bipolar Device - The invention, in one aspect, provides a method of manufacturing a semiconductor device. This aspect includes forming gate electrodes in a non-bipolar transistor region of a semiconductor substrate, placing a polysilicon layer over the gate electrodes in the non-bipolar transistor region and over the semiconductor substrate within a bipolar transistor region. A protective layer is formed over the polysilicon layer. The protective layer has a weight percent of hydrogen that is less than about 9% and is selective to silicon germanium (SiGe), such that SiGe does not form on the protective layer. This aspect further includes forming emitters for bipolar transistors in the bipolar transistor region, including forming a SiGe layer under a portion of the polysilicon layer. | 10-02-2008 |
20090050977 | METHOD TO REDUCE BORON PENETRATION IN A SiGe BIPOLAR DEVICE - The invention, in one aspect, provides a method of manufacturing a semiconductor device. This aspect includes forming gate electrodes in a non-bipolar transistor region of a semiconductor substrate, placing a polysilicon layer over the gate electrodes in the non-bipolar transistor region and over the semiconductor substrate within a bipolar transistor region. A protective layer is formed over the polysilicon layer. The protective layer has a weight percent of hydrogen that is less than about 9% and is selective to silicon germanium (SiGe), such that SiGe does not form on the protective layer. This aspect further includes forming emitters for bipolar transistors in the bipolar transistor region, including forming a SiGe layer under a portion of the polysilicon layer. | 02-26-2009 |
20090236668 | METHOD TO IMPROVE WRITER LEAKAGE IN SiGe BIPOLAR DEVICE - The invention, in one aspect, provides a method for fabricating a semiconductor device, which includes conducting an etch through an opening in an emitter layer to form a cavity from an underlying oxide layer that exposes a doped tub. A first silicon/germanium (SiGe) layer, which has a Ge concentration therein, is formed within the cavity and over the doped tub by adjusting a process parameter to induce a strain in the first SiGe layer. A second SiGe layer is formed over the first SiGe layer, and a capping layer is formed over the second SiGe layer. | 09-24-2009 |
20100065920 | METHOD TO REDUCE COLLECTOR RESISTANCE OF A BIPOLAR TRANSISTOR AND INTEGRATION INTO A STANDARD CMOS FLOW - The invention, in one aspect, provides a method for fabricating a semiconductor device. In one aspect, the method provides for a dual implantation of a tub of a bipolar transistor. The tub in bipolar region is implanted by implanting the tub through separate implant masks that are also used to implant tubs associated with MOS fabricate different voltage devices in a non-bipolar region during the fabrication of MOS transistors. | 03-18-2010 |
20100102418 | BIPOLAR DEVICE HAVING IMPROVED CAPACITANCE - The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector that ranges from about 0.9 microns to about 2.0 microns. | 04-29-2010 |
20110312146 | BIPOLAR DEVICE HAVING BURIED CONTACTS - This disclosure, in one aspect, provides a method of manufacturing a semiconductor device that includes forming a collector for a bipolar transistor within a semiconductor substrate, forming a base within the collector, forming a patterned isolation layer over the collector and base, forming an emitter layer over the patterned isolation layer, forming an isolation layer over the emitter layer, patterning the patterned isolation layer, the emitter layer and the isolation layer to form at least one emitter structure having an isolation region located on a sidewall thereof, and forming a buried contact in the collector to a depth sufficient to adequately contact the collector. | 12-22-2011 |
Mark Victor Dyson, Singapore SG
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20100032766 | Bipolar Junction Transistor with a Reduced Collector-Substrate Capacitance - A process for forming a bipolar junction transistor (BJT) in a semiconductor substrate and a BJT formed according to the process. A buried isolation region is formed underlying BJT structures to isolate the BJT structures from the p-type semi-conductor substrate. To reduce capacitance between a BJT subcollector and the buried isolation region, prior to implanting the subcollector spaced-apart structures are formed on a surface of the substrate. The subcollector is formed by implanting ions through the spaced-apart structures and through a region intermediate the spaced-apart structures. The formed BJT subcollector therefore comprises a body portion and end portions extending therefrom, with the end portions disposed at a shallower depth than the body portion, since the ions implanting the end portions must pass through the spaced-apart structures. The shallower depth of the end portions reduces the capacitance. | 02-11-2010 |
Paul Dyson, Ecublens CH
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20090143597 | Ionic Liquids Based on Imidazolium Salts Incorporating a Nitrile Functionality - Novel chemical compounds of the general formula | 06-04-2009 |
20100068131 | HYDROGEN PRODUCTION FROM FORMIC ACID - The present invention relates to a method of producing hydrogen gas and carbon dioxide in a catalytic reaction from formic acid, said reaction being conducted in an aqueous solution over a wide temperature range and already at room temperature (25° C.). The reaction is advantageous because it can be tuned to take place at very high rates, up to about 90 litre H2/minute/litre reactor volume. The gas produced is free of carbon monoxide. The method of the present invention is particularly suitable for providing hydrogen for a motor, fuel cell or chemical synthesis. | 03-18-2010 |
20120108820 | IONIC LIQUIDS BASED ON IMIDAZOLIUM SALTS INCORPORATING A NITRILE FUNCTIONALITY - Novel chemical compounds of the general formula | 05-03-2012 |
Paul Joseph Dyson, Ecublens CH
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20090312301 | Transition Metal Complexes for Inhibiting Resistance in the Treatment of Cancer and Metastasis - The present invention relates to organometallic compounds useful in the treatment of metastasis. The organometallic compounds comprise a ligand that is covalently bound to a bioactive compound, which is an inhibitor of a resistance pathway or a derivative thereof. Preferably, the organometallic compounds are half-sandwich (“piano-stool”) compounds. The compounds of the present invention offer a high variability with respect to the bioactive compound and to the nature of the ligand bound to a central transition metal. | 12-17-2009 |
20100173885 | ORGANOMETEALLIC COMPOUNDS - The present invention relates to novel organometallic compounds for use as a medicine, in particular in photodynamic therapy against various diseases, such as cancer or inflammatory and/or immune disorders. The compounds comprise a central porphyrin or phtalocyanine backbone to which ligand linkers coordinated to at least one transition metal are attached. Eta-5 or eta-6 arenes further bind to the transition metal. According to a preferred embodiment, the compound is a tetranuclear Ruthenium (+II) complex. | 07-08-2010 |
20130172408 | Medicaments Based on Dinuclear Arene Ruthenium Complexes Comprising Bridging Thiolato, Selenolato or Alkoxo Ligands - The present invention provides new complexes and medicaments based on dinuclear ruthenium complexes comprising bridging thiolato or selenolato ligands. The complexes comprise a Ru | 07-04-2013 |
Roderick Mark Dyson, Gauteng ZA
Patent application number | Description | Published |
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20080301049 | Transaction Management System - The transaction management system | 12-04-2008 |