| Patent application number | Description | Published |
|---|
| 20090035934 | Self-Aligned Cross-Point Memory Fabrication - Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections. | 02-05-2009 |
| 20090053535 | Reduced Residual Formation in Etched Multi-Layer Stacks - A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition. | 02-26-2009 |
| 20090148032 | Alignment Using Moire Patterns - Methods of determining relative spatial parameters between two substrates in a process of alignment are described. Generally, multiple alignment data may be collected from phase information using a pair of alignment marks. | 06-11-2009 |
| 20090148619 | Controlling Thickness of Residual Layer - Methods for manufacturing a patterned surface on a substrate are described. Generally, the patterned surface is defined by a residual layer having a thickness of less than approximately 5 nm. | 06-11-2009 |
| 20090200266 | Template Pillar Formation - Materials for forming an imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials. | 08-13-2009 |
| 20090200710 | EXTRUSION REDUCTION IN IMPRINT LITHOGRAPHY - Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified. | 08-13-2009 |
| 20090212012 | CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION - Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer. | 08-27-2009 |
| 20100095862 | Double Sidewall Angle Nano-Imprint Template - The present application describes a template with feature profiles that have multiple sidewall angles. The multiple sidewall angles facilitate control over critical dimensions and reduce issues related to template release. | 04-22-2010 |
| 20100112236 | Facilitating Adhesion Between Substrate and Patterned Layer - Systems and methods for adhering a substrate to a patterned layer are described. Included are in situ cleaning and conditioning of the substrate, and the application of an adhesion layer between the substrate and the patterned layer, as well as forming an intermediate layer between adhesion materials and the substrate. | 05-06-2010 |
| 20100120251 | Large Area Patterning of Nano-Sized Shapes - Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process. | 05-13-2010 |
| 20100323490 | Self-Aligned Cross-Point Memory Fabrication - Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections. | 12-23-2010 |
| 20110165412 | ADHESION LAYERS IN NANOIMPRINT LITHOGRAHY - Forming an adhesive layer on a nanoimprint lithography template or a double-sided disk. Forming the adhesive layer on the double-sided disk includes immersing the double-sided disk in a liquid adhesive composition and removing the double-sided disk from the adhesive composition. The outer layer of the double-sided disk is a carbon overcoating or an intermediate layer. The adhesive composition is dried to form a first adhesion layer adhered directly to the carbon overcoating or intermediate layer on a first side of the disk and a second adhesion layer adhered directly to the carbon overcoating or intermediate layer on a second side of the disk. Forming the adhesive layer on the nanoimprint lithography template includes applying an adhesive material to the template, allowing the template to remain motionless, and rinsing a portion of the adhesive material from the template with a solvent, and drying the template. | 07-07-2011 |
