Patent application number | Description | Published |
20110303661 | STORAGE MODULE ADAPTER ASSEMBLY FOR MODULAR CONTAINER - A storage module adapter assembly includes adapter base plates that are two-person portable, can be installed/removed by hand, and cooperate with existing structures of existing modular cargo containers. Each adapter base plate includes various longitudinal and transverse frame members, as well as first and second longitudinal frame members on opposed sides thereof. The first longitudinal frame member has a first height, and the second longitudinal frame member has a second height, which is greater than the first height. Each of the first and second longitudinal frame members also include generally horizontal flange members extending from a top side thereof, such that when two adapter base plates are appropriately positioned side by side, the generally horizontal flange members on the adjacent sides of the two adapter base plates overlap due to the difference between the first and second heights. The adapter base plates can then be connected together by appropriate mechanisms. | 12-15-2011 |
20140034637 | STORAGE MODULE ADAPTER ASSEMBLY FOR MODULAR CONTAINER - A storage module adapter assembly includes adapter base plates that are two-person portable, can be installed/removed by hand, and cooperate with existing structures of existing modular cargo containers. Each adapter base plate includes various longitudinal and transverse frame members, as well as first and second longitudinal frame members on opposed sides thereof. The first longitudinal frame member has a first height, and the second longitudinal frame member has a second height, which is greater than the first height. Each of the first and second longitudinal frame members also include generally horizontal flange members extending from a top side thereof, such that when two adapter base plates are appropriately positioned side by side, the generally horizontal flange members on the adjacent sides of the two adapter base plates overlap due to the difference between the first and second heights. The adapter base plates can then be connected together by appropriate mechanisms. | 02-06-2014 |
Patent application number | Description | Published |
20090278244 | IC DEVICE HAVING LOW RESISTANCE TSV COMPRISING GROUND CONNECTION - A semiconductor device includes an integrated circuit (IC) die including a substrate, and at least one through substrate via (TSV) that extends through the substrate to a protruding integral tip that includes sidewalls and a distal end. The protruding integral tip has a tip height between 1 and 50 μm. A metal layer is on the bottom surface of the IC die, and the sidewalls and the distal end of the protruding integral tips. A semiconductor device can include an IC die that includes TSVs and a package substrate such as a lead-frame, where the IC die includes a metal layer and an electrically conductive die attach adhesive layer, such as a solder filled polymer wherein the solder is arranged in an electrically interconnected network, between the metal layer and the die pad of the lead-frame. | 11-12-2009 |
20090289648 | COAXIAL FOUR-POINT PROBE FOR LOW RESISTANCE MEASUREMENTS - Various exemplary embodiments provide probes, systems and methods for measuring an effective electrical resistance/resistivity with high sensitivity. In one embodiment, the measuring system can include an upper probe set and a similar lower probe set having a sample device sandwiched there-between. The device-under-test (DUT) samples can be sandwiched between two conductors of the sample device. Each probe set can have an inner voltage sense probe coaxially configured inside an electrically-isolated outer current source probe that has a large contact area with the sample device. The measuring system can also include a computer readable medium for storing circuit simulations including such as FEM simulations for extracting a bulk through-plane electrical resistivity and an interface resistivity for an effective electrical z-resistivity of the DUT, in some cases, having sub-micro-ohm resistance. | 11-26-2009 |
20090297879 | Structure and Method for Reliable Solder Joints - A solder joint ( | 12-03-2009 |
20100159643 | BONDING IC DIE TO TSV WAFERS - A method for bonding IC die to TSV wafers includes bonding at least one singulated IC die to respective ones of a plurality of IC die on a TSV wafer that includes a top semiconductor surface and TSV precursors including embedded TSV tips to form a die-wafer stack. The die-wafer stack is thinned beginning from the bottom surface of the TSV wafer to form a thinned die-wafer stack. The thinning includes exposing the embedded TSV tips to provide electrical access thereto from the bottom surface of the TSV wafer. The thinned die-wafer stack can be singulated to form a plurality of thinned die stacks. | 06-24-2010 |
20110183464 | DUAL CARRIER FOR JOINING IC DIE OR WAFERS TO TSV WAFERS - A method of forming stacked electronic articles using a through substrate via (TSV) wafer includes mounting a first carrier wafer to a top side of the TSV wafer using a first adhesive material that has a first debonding temperature. The TSV wafer is thinned from a bottom side of the TSV wafer to form a thinned TSV wafer. A second carrier wafer is mounted to the bottom side of the TSV wafer using a second adhesive material that has a second debonding temperature that is higher as compared to the first debonding temperature. The thinned TSV wafer is heated to a temperature above the first debonding temperature to remove the first carrier wafer from the thinned TSV wafer. At least one singulated IC die is bonded to TSV die formed on the top surface of the thinned TSV wafer to form the stacked electronic article. | 07-28-2011 |
20120070939 | STACKED DIE ASSEMBLIES INCLUDING TSV DIE - A method of through substrate via (TSV) die assembly includes positioning a plurality of TSV die with their topside facing down onto a curable bonding adhesive layer on a carrier. The plurality of TSV die include contactable TSVs that include or are coupled to bondable bottomside features protruding from its bottomside. The curable bonding adhesive layer is cured after the positioning. A plurality of second IC die each having a plurality of second bonding features are bonded onto the plurality of TSV die to form a plurality of stacked die assemblies on the carrier. Debonding after the bonding separates the carrier from the plurality of stacked die assemblies. The plurality of stacked die assemblies are then singulated to form a plurality of singulated stacked die assemblies. | 03-22-2012 |
20120193814 | IC Device Having Low Resistance TSV Comprising Ground Connection - A semiconductor device includes an integrated circuit (IC) die including a substrate, and a plurality of through substrate via (TSV) that extends through the substrate to a protruding integral tip and which is partially covered with a dielectric liner and partially exposed from the dielectric liner. A metal layer is on the bottom surface of the IC die die physically connecting the plurality of TSVs and physically and electrically connected to connecting the first metal protruding tips of TSVs. | 08-02-2012 |
20120194208 | Coaxial Four-Point Probe for Low Resistance Measurements - Various exemplary embodiments provide probes, systems and methods for measuring an effective electrical resistance/resistivity with high sensitivity. In one embodiment, the measuring system can include an upper probe set and a similar lower probe set having a sample device sandwiched there-between. The device-under-test (DUT) samples can be sandwiched between two conductors of the sample device. Each probe set can have an inner voltage sense probe coaxially configured inside an electrically-isolated outer current source probe that has a large contact area with the sample device. The measuring system can also include a computer readable medium for storing circuit simulations including such as FEM simulations for extracting a bulk through-plane electrical resistivity and an interface resistivity for an effective electrical z-resistivity of the DUT, in some cases, having sub-micro-ohm resistance. | 08-02-2012 |
20120202321 | IC Device Having Low Resistance TSV Comprising Ground Connection - A method of forming a semiconductor device includes an integrated circuit (IC) die which is provided with a substrate with surfaces. At least one through substrate via (TSV) is formed through the substrate to a protruding integral tip that includes sidewalls and a distal end. A metal layer is formed on the bottom surface of the IC die, and the sidewalls and the distal end of the protruding integral tips. Completing fabrication of at least one functional circuit including at least one ground pad on the top surface of the semiconductor, wherein the ground pad is coupled to said TSV. | 08-09-2012 |
20130256852 | Stacked Semiconductor Package - A method of making a stacked semiconductor package having at least a leadframe, a first die mounted above and soldered to the lead frame and a first clip mounted above and soldered to the first die. The method includes positioning the leadframe, first die and first clip in a vertically stacked relationship and nonsolderingly locking the first clip in laterally nondisplaceble relationship with the leadframe. A stacked semiconductor package and an intermediate product produced in making a stacked semiconductor package are also disclosed. | 10-03-2013 |