Patent application number | Description | Published |
20090050947 | Apparatus, system, and method providing backside illuminated imaging device - Method, apparatus, and/or system providing a backside illuminated imaging device. A non-planar metallic or otherwise reflective layer is provided in an image pixel cell at the frontside of the device substrate to capture radiation passing through the device substrate. The non-planar surface is formed to be capable of reflecting substantially all such radiation back to a photosensor located in the same pixel cell. | 02-26-2009 |
20090081822 | OPTICAL ENHANCEMENT OF INTEGRATED CIRCUIT PHOTODETECTORS - A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device. | 03-26-2009 |
20090250734 | PIXEL WITH ASYMMETRIC TRANSFER GATE CHANNEL DOPING - A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized. | 10-08-2009 |
20100267182 | WAFER BONDING OF MICRO-ELECTRO MECHANICAL SYSTEMS TO ACTIVE CIRCUITRY - A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer. | 10-21-2010 |
Patent application number | Description | Published |
20080286915 | Metal-Oxide-Semiconductor High Electron Mobility Transistors and Methods of Fabrication - A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described. | 11-20-2008 |
20090108385 | METHOD AND APPARATUS FOR IMPROVING CROSSTALK AND SENSITIVITY IN AN IMAGER - A pixel sensor cell includes a substrate of a first conductivity type, and a photoconversion region. The photoconversion region includes a pinning layer of the first conductivity type for receiving incident light of multiple colors, and a diode implant layer of a second conductivity type, disposed below the pinning layer, for accumulating photo-generated charge. Also included is a deep well of the first conductivity type, disposed below the diode implant layer, for rejecting at least one color of the incident light. The deep well includes a doped region, vertically disposed at a predetermined depth below the diode implant layer. The diode implant layer is effective in accumulating photo-generated charge of a blue color, and the deep well is effective in rejecting photo-generated charges of green and red colors from the diode implant layer. By placing the deep well at another predetermined depth below the diode implant layer, the deep well is effective in rejecting photo-generated charge of a red color from the diode implant layer. | 04-30-2009 |
20090174018 | CONSTRUCTION METHODS FOR BACKSIDE ILLUMINATED IMAGE SENSORS - A method of constructing a backside illuminated image sensor is described. The method includes the steps of forming a semiconductor wafer, forming at least electrical contacts in the semiconductor wafer, forming, in a handle wafer separate from the semiconductor wafer, a plurality of via holes, attaching the semiconductor wafer to the handle wafer such that the via holes in the handle wafer are aligned with the respective electrical contacts on the semiconductor wafer, removing the substrate layer from the semiconductor wafer, removing at least a portion of the handle wafer to expose the plurality of via holes, filling each of the exposed via holes with a conductive material and applying a solder material to each of the exposed via holes such that the conductive material in each of the via holes is electrically connected to the solder material. | 07-09-2009 |
20090174801 | METHOD AND APPARATUS FOR IDENTIFICATION AND CORRECTION OF ABERRANT PIXELS IN AN IMAGE SENSOR - An apparatus and method for identifying aberrant pixels in an image sensor. The apparatus includes a light sensitive element configured to detect a first signal value representing a first level of an incident light and a light sensitive region separate from the light sensitive element configured to detect a second signal value representing a second level of the incident light. Comparing circuitry is configured to compare the first signal value and the second signal value and to output a signal indicating the pixel is an aberrant pixel if the first and second signal values differ by more than a maximum threshold value or less than a minimum threshold value in a threshold value range. | 07-09-2009 |
20090184349 | 3D BACKSIDE ILLUMINATED IMAGE SENSOR WITH MULTIPLEXED PIXEL STRUCTURE - A three-dimensional pixel array, a method of manufacturing a pixel array and an imager including the three-dimensional pixel array. The three-dimensional array includes multiple groups of pixels, each group of pixels including a first layer and a second layer. The first layer includes multiple photosensitive elements, one per pixel in the group, at least one floating diffusion region connected to each photosensitive element in the group via at least one respective transfer gate per pixel and multiple transfer gate lines, at least two transfer gate lines connected to each respective transfer gate in each row of pixels. The second layer includes at least a rest transistor per group and a source follower transistor coupled to the shared floating diffusion in the first layer. | 07-23-2009 |
20130288461 | Metal-Oxide-Semiconductor High Electron Mobility Transistors and Methods of Fabrication - A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described. | 10-31-2013 |