Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Duh
Been-Lim Duh, Singapore SG
| Patent application number | Description | Published |
|---|---|---|
| 20100148042 | SENSOR - A sensor for angle measurement of a joint is disclosed. The sensor comprises a code strip, a linear encoder configured to detect relative movement between the linear encoder and the code strip, and a microcontroller configured to compute angular rotation of the joint from linear displacement obtained by the relative movement. The relative movement corresponds to rotation of the joint. A corresponding method and system are also disclosed. | 06-17-2010 |
Jeng-Gong Duh, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20110147950 | METALLIZATION LAYER STRUCTURE FOR FLIP CHIP PACKAGE - The present invention discloses a metallization layer structure for flip chip package, which comprises an UBM layer formed on a metal pad, whereby a fine-quality tin-based solder ball can be formed on the metal pad. The UBM layer is a NiZnP layer formed via the reduction and oxidization of a solution containing nickel sulfate (Ni | 06-23-2011 |
Jenq-Gong Duh, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20080296148 | Method for fabricating concentration-gradient high-frequency ferromagnetic films - The present invention discloses a method for fabricating concentration-gradient high-frequency ferromagnetic film, wherein the primary material target is arranged exactly below the sputter-coated substrate to achieve the on-substrate concentration uniformity of the components coming from the primary material target; at least one doping target is arranged at a position deviating from the center of the substrate to create a doping concentration gradient on the substrate along a direction, and a stress gradient is thus created on the substrate along the direction of concentration variation. Thus, the as-deposited ferromagnetic material fabricated at ambient temperature can possess the uniaxial anisotropy that a high-frequency ferromagnetic material needs. | 12-04-2008 |
| 20100244266 | METALLIC BONDING STRUCTURE FOR COPPER AND SOLDER - The present invention discloses a metallic bonding structure for copper and solder, which applies to connect at least one electronic element. The metallic bonding structure comprises at least one copper-based member and at least one zinc bonding member. The copper-based members are arranged on the electronic element through at least one solder member. The zinc bonding members are arranged between the copper-based members and the solder members. The solder members are tin-based solder bumps. | 09-30-2010 |
| 20100277880 | ELECTRONIC PACKAGE STRUCTURE - The present invention discloses an electronic package structure, which comprises an electronic element, a plurality of SMA (Shape Memory Alloy) connection portions, and a plurality of solder connection members. One side of the SMA connection portion is joined to the electronic element, and the solder connection member is arranged over the other side of the SMA connection portion. The SMA connection portions can comply with the strains caused by thermal stresses during the operation of the electronic product and can restore the original shape after the thermal stresses disappear. Therefore, the preset invention can prevent the junctions between the SMA connection portions and the electronic element/the solder connection members from the crack or disconnection caused by thermal stresses. | 11-04-2010 |
| 20110109415 | INDUCTOR STRUCTURE - The present invention discloses an improved inductor structure, which applies to the semiconductor field, particularly to a system-on-chip, and which comprises a substrate, a first conductive patterned film, and a first insulating layer formed between the substrate and the first conductive patterned film. The substrate has a base and an accommodation portion formed in the base. A magnetic material is filled into the accommodation portion to form a magnetic region. The accommodation portion is fabricated via etching the base or drilling a through-hole in the base. A plurality of conductive wires is arranged in a spiral way to form the first conductive patterned film. A protective layer covers the surface of the first conductive patterned film and isolates the contact of the first conductive patterned film and moisture. | 05-12-2011 |
Jiann-Jeng (john) Duh, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090089538 | Synchronous Address And Data Multiplexed Mode For SRAM - A synchronous memory system configurable in a multiplexed or non-multiplexed mode. In the multiplexed mode, address and data are provided on a shared bus, and accesses to the memory system are qualified by memory access control signals, including an address strobe signal, a counter enable signal and a counter repeat signal. A read/write control signal is maintained for one cycle after the last valid access command to avoid bus turn-around problems. In the multiplexed mode, chip enable and output enable signals may be constantly activated, thereby simplifying associated printed circuit board design. Different ports of the synchronous memory system can be independently configured to operate in either the multiplexed or non-multiplexed mode. | 04-02-2009 |
Kevin K. Duh, Seattle, WA US
| Patent application number | Description | Published |
|---|---|---|
| 20100082516 | Modifying a System in Response to Indications of User Frustration - An illustrative frustration processing system modifies the operation of a target system to improve its performance. In one case, the frustration processing system receives express indications that a user is frustrated in the course of interacting with the target system. The frustration processing system responds to these indications by modifying the operation of the target system to reduce the likelihood that the user will be frustrated in the future. The frustration processing system can modify the operation of the target system by applying a policy to the target system. The policy, in turn, is created using a prediction model. The prediction model predicts when a user is likely to be frustrated based on the user's prior indications of frustration. | 04-01-2010 |
Ting Shien Duh, Taoyuan County TW
| Patent application number | Description | Published |
|---|---|---|
| 20110077894 | Process parameter assessment method for the solid target for gallium (Ga)-68/germanium (Ge)-68 generator - A process parameter assessment method for the solid target for gallium (Ga)-68/germanium (Ge)-68 generator mainly consists of the procedures: first calculate the thickness d for the electroplated gallium (Ga)-69 on the solid target; and then through a graph of decay curves comprising 69Ga(p, 2n) 68Ge target thickness and incident energy with 5 different incident energy doses (30, 26, 25, 24, 23 MeV), based on electroplating thickness d, derive the corresponding irradiation energy dose Yi for each group after decay; and through the graph comprising 69Ga(p, 2n) 68Ge incident energy and reaction cross-sectional area (containing corrected function graph of incident energy for germanium-68, gallium-68, or zinc-65 and reaction cross-sectional area), based on the defined range by irradiation energy dose Xi and the corresponding irradiation energy dose Yi, derive the nuclear reaction cross-sectional area for each group for germanium (Ge)-68, gallium (Ga)-68, zinc (Zn)-65 and figure out the mean reaction area (MRA) from the reaction cross-sectional area of each group; and select the maximum germanium (Ge)-68 MRA value and the minimum gallium (Ga)-68 and zinc (Zn)-65 MRA values; and generate the required default irradiation energy for the MRA of each group as the optimal reaction energy. | 03-31-2011 |
Ting-Shien Duh, Longtan Township TW
| Patent application number | Description | Published |
|---|---|---|
| 20090211917 | RADIOISOTOPE T1-201 PRODUCTION PROCESS - A radioisotope Tl-201 is produced. The process includes electroplating, irradiating, dissolving precipitating, ion exchanging, decaying and filtering. The Tl-201 obtained is a liquid having a high purity. | 08-27-2009 |
Ting-Shien Duh, Daxi Town TW
| Patent application number | Description | Published |
|---|---|---|
| 20100243082 | Liquid isotope delivery system - A liquid isotope delivery system includes a pressure-controlling unit, an input unit, a target chamber, a proton-radiating unit and a storage unit. The pressure-controlling unit includes a first regulating valve, a second regulating valve connected to the first regulating valve and a third regulating valve connected to the first regulating valve. The input unit is connected to the second regulating valve. The target chamber is connected to the third regulating valve and the input unit. The proton-radiating unit is located near the target chamber. The storage unit is connected to the target chamber. | 09-30-2010 |