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Ducruet
Alexander P. Ducruet, Pittsburgh, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20080311112 | USE OF TOLL-LIKE RECEPTOR-9 AGONISTS, TOLL-LIKE RECEPTOR-4 ANTAGONISTS, AND/OR NUCLEAR OLIGOMERIZATION DOMAIN-2 AGONISTS FOR THE TREATMENT OR PREVENTION OF TOLL-LIKE RECEPTOR-4-ASSOCIATED DISORDERS - The present invention relates to the use of a TLR9 agonist and/or a TLR4 antagonist and/or a NOD2 agonist for treatment or prevention of disorders involving TLR4 activation, such as systemic sepsis and necrotizing enterocolitis. | 12-18-2008 |
Andrew F. Ducruet, New York, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20090280058 | Delivery Of Double-Stranded RNA Into The Central Nervous System - The present invention provides for compositions and methods for in vivo delivery of a cell-permeable complex to cells of the central nervous system, wherein the cell-permeable complex decreases the level of a functional target protein encoded by a target mRNA molecule. In preferred embodiments of the invention, the cell-permeable complex comprises an siRNA nucleic acid molecule operably linked to a cell-penetrating peptide, wherein the cell-penetrating peptide facilitates transport of the cell-permeable complex across both the blood brain barrier and cell membrane of a target cell. The methods of the invention further encompass the utilization of convection-enhanced delivery methods such as intracerebral clysis (ICC) to deliver the cell-permeable complex to the target cells of the central nervous system. | 11-12-2009 |
Clarisse Ducruet, Grenoble FR
| Patent application number | Description | Published |
|---|---|---|
| 20090147392 | MAGNETIC ELEMENT WITH THERMALLY-ASSISTED WRITING - This magnetic element with thermally-assisted writing using a field or spin transfer comprises a magnetic reference layer referred to as the “trapped layer”, the magnetisation of which is in a fixed direction; a magnetic storage layer called the “free layer” having a variable magnetisation direction and consisting of a layer made of a ferromagnetic material with magnetisation in the plane of the layer and magnetically coupled to a magnetisation-trapping layer made of an antiferromagnetic material; a semiconductor or an insulating layer with confined-current-paths sandwiched between the reference layer and the storage layer. At least one bilayer consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer is placed in the storage layer between ferromagnetic layer which is in contact with the semiconductor or insulating layer with confined-current-paths and antiferromagnetic layer. | 06-11-2009 |
| 20100284215 | MAGNETIC MEMORY WITH A THERMALLY ASSISTED WRITING PROCEDURE AND REDUCED WRITING FIELD - A magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure, comprising a magnetic tunnel junction formed from a ferromagnetic storage layer having a first magnetization adjustable at a high temperature threshold, a ferromagnetic reference layer having a fixed second magnetization direction, and an insulating layer, said insulating layer being disposed between the ferromagnetic storage and reference layers; a select transistor being electrically connected to said magnetic tunnel junction and controllable via a word line; a current line electrically connected to said magnetic tunnel junction; characterized in that the magnetocrystalline anisotropy of the ferromagnetic storage layer is essentially orthogonal with the magnetocrystalline anisotropy of the ferromagnetic reference layer. The TAS-MRAM cell of the invention can be written with a smaller magnetic field than the one used in conventional TAS-MRAM cells and has low power consumption. | 11-11-2010 |
Rene Ducruet, Cranves-Sales FR
| Patent application number | Description | Published |
|---|---|---|
| 20090000928 | Electric Micro-Contactor for a Circuit Card and Electric Switch Comprising One Such Micro-Contactor - An electrical microcontact for printed circuit boards is adapted to make an electrical contact between two associated connecting areas of a circuit board. The microcontact includes a metal plate having a generally U-shaped first portion each of the branches whereof has at its end reflow areas adapted to be connected by the reflow process to associated connecting areas of the circuit board and a second portion taking the form of a central tongue connected in one piece to the base of the U and extending between the two branches of the U, this tongue being inclined relative to a plane defined by the U in such a manner that pressing on a pressure area situated toward the free end of the tongue makes electrical contact between a contact area of the tongue and the associated connecting area of the printed circuit board. | 01-01-2009 |