Patent application number | Description | Published |
20090206432 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer. | 08-20-2009 |
20090261443 | SHARED-PIXEL-TYPE IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts. | 10-22-2009 |
20110080511 | IMAGE SENSORS AND METHODS OF FABRICATING THE SAME - An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate. | 04-07-2011 |
20120077301 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench. | 03-29-2012 |
20120252155 | METHOD OF IMPLANTING IMPURITIES AND METHOD OF MANUFACTURING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR USING THE SAME - In a method of doping impurities, an amorphous layer is formed on a substrate. Impurities are implanted through a top surface of the amorphous layer to form a first doping region at an upper portion of the substrate. The first doping region and the amorphous layer are transformed into a second doping region and a recrystallized layer, respectively, by a laser annealing process. The recrystallized layer is removed. | 10-04-2012 |
20130240960 | IMAGE SENSOR - An image sensor having a sensor array area, a circuit area around the sensor array area, and a pad area adjacent to the circuit area includes a substrate, a multi-layer wiring structure including a plurality of wiring layers on a first surface of the substrate in the circuit area, at least one well in the substrate in the circuit area, and metal wiring that extends on a second surface of the substrate opposite to the first surface, from the pad area to the circuit area, and extends from the second surface into contacts with the at least one well. | 09-19-2013 |
20140264695 | Image Sensor and Method of Manufacturing the Same - An image sensor includes a semiconductor layer having a first surface and a second surface opposite to each other and including a photodiode and a hydrogen containing region adjacent the first surface. A crystalline anti-reflective layer is on the first surface of the semiconductor layer, and is configured to allow hydrogen atoms to penetrate into the first surface of the semiconductor layer. Driving transistors and wires are on the second surface of the semiconductor layer, and a color filter and a micro lens are on the anti-reflective layer. The hydrogen containing region contains hydrogen atoms that combine with defects at the first surface. | 09-18-2014 |
20140374868 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor includes a plurality of photo detectors and a plurality of trench isolations configured to isolate the photo detectors from each other. Each of the trench isolations includes a plurality of films in a multi-layer structure. A method of manufacturing an image sensor includes forming a plurality of trench isolations to isolate a plurality of photo detectors from each other, forming a first film in each of the trench isolations, and forming a second film that constructs a multi-layer structure together with the first film. | 12-25-2014 |