| Patent application number | Description | Published |
|---|
| 20080236618 | Cleaning of bonded silicon electrodes - Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member. | 10-02-2008 |
| 20090090393 | CLEANING FIXTURES AND METHODS OF CLEANING ELECTRODE ASSEMBLY PLENUMS - According to one embodiment of the present invention, a method of cleaning one or more fluid plenums of an electrode assembly is provided. According to the method, a plurality of fluid ports in communication with the fluid plenum are isolated and differentiated into respective sets of plenum input ports and plenum output ports. The input and output ports are engaged with respective cleaning fluid couplings. A cleaning fluid is directed through the fluid plenum by creating a fluid pressure differential ΔP=P | 04-09-2009 |
| 20090321018 | PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME - In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated. | 12-31-2009 |
| 20090322199 | BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME - A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated. | 12-31-2009 |
| 20090325320 | PROCESSES FOR RECONDITIONING MULTI-COMPONENT ELECTRODES - A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated. | 12-31-2009 |
| 20100139692 | IMMERSIVE OXIDATION AND ETCHING PROCESS FOR CLEANING SILICON ELECTRODES - A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed. | 06-10-2010 |
| 20100144246 | PLATEN AND ADAPTER ASSEMBLIES FOR FACILITATING SILICON ELECTRODE POLISHING - A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis. The silicon electrode is polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary motion to the engaged silicon electrode, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode rotates about the rotary polishing axis. Additional embodiments are contemplated, disclosed and claimed. | 06-10-2010 |
| 20100319813 | BARE ALUMINUM BAFFLES FOR RESIST STRIPPING CHAMBERS - Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer. | 12-23-2010 |
| 20110146909 | METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS - Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times. | 06-23-2011 |
