| Patent application number | Description | Published |
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| 20080218211 | High-speed buffer circuit, system and method - A buffer circuit includes at least one part that is powered by a supply voltage by means of a first initialization transistor, and connected to the ground by means of a second initialization transistor. The circuit is capable of transferring, between an input and an output, an input signal including at least one rising edge and/or one falling edge. The circuit includes a first CMOS inverter, of which the input is connected to the input of the circuit, and of which the output is mounted in series with the input of a second CMOS inverter, with the output of the second CMOS inverter being connected to the output of the circuit. A circuit creates an overvoltage on one of the two inverters during operation. | 09-11-2008 |
| 20100265758 | Method for implementing an SRAM memory information storage device - A device, and a corresponding method of implementation, for SRAM memory information storage are provided. The device is powered by a supply voltage and includes an array of base cells organized in base columns, and at least one mirror column of at least one mirror cell liable to simulate the behavior of the cells in a base column. The device further includes Emulation means, in a mirror column, of the most restricting cell in a base column, Means for varying a mirror power supply voltage for the mirror column, and Means for copying the mirror power supply voltage in the emulated base column. | 10-21-2010 |
| Patent application number | Description | Published |
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| 20080290899 | Integrated circuit and method of detecting a signal edge transition - The invention relates to an edge transition detector, and a method of operating an edge transition detector. An integrated circuit includes an edge transition detector for producing an output signal at an output node in response to an input signal. The edge transition detector includes a switch coupled to the output node. The edge transition detector includes a logic device with a first input coupled to the input node and an output coupled to a control terminal of the switch to enable the switch to conduct, thereby effecting a transition of the output signal from a first logic level to a second logic level in response to the input signal. A feedback path is provided from the output node to a second input of the logic device to disable switch conductivity when the output signal completes the logic transition from the first logic level to the second logic level. | 11-27-2008 |
| 20090027987 | Memory Device and Testing - An apparatus including a memory cell, a reference cell, a control unit, coupled to the memory cell and the reference cell, and configured to initiate write processes of the memory cell and the reference cell, and a detection unit, coupled to the reference cell, and configured to detect a write completion of the reference cell. Related methods are also disclosed. | 01-29-2009 |
| 20110128767 | Memory With Intervening Transistor - Disclosed herein are memory devices and related methods and techniques. A cell in the memory device may be associated with an intervening transistor, the intervening transistor being configured to isolate the cell from adjacent cells under a first operating condition and to provide a current to a bit line associated with the cell under a second operating condition. | 06-02-2011 |
