Drachev
Alexander Drachev, Tempe, AZ US
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20100136956 | Real-time discovery and mutual screening of candidates for direct personal contact in user-designated vicinities - A method for real-time discovery and mutual screening of candidates for direct personal contact in a vicinity, using electronic devices that can communicate with a central facility, and with each other. Each user individually sets one or more target vicinity, personal attributes, and screening criteria. A list of desirable and/or available candidates in his or her designated vicinity is delivered to each user's device. Users will be able to recognize the candidates from provided descriptions, and either modify their settings to adjust the lists, or send a request for contact to a selected available candidate. Each user can iterate, until their request is accepted, or they accept a request from another user. The method minimizes both the probability, and the embarrassment of rejection by means of mutual screening of the desirable available candidates. | 06-03-2010 |
Alexandr Ivanovich Drachev, Moscow RU
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20090142862 | LUMINESCENT SEMI-CONDUCTIVE POLYMER MATERIAL, METHOD OF PREPARING THE SAME AND ORGANIC LIGHT EMITTING ELEMENT HAVING THE SAME - The present invention is related to a luminescent material generated by polymerization of a pyrromethene complex by glow discharge. The polymer material of the present invention exhibits semi-conductive properties and has a luminescence maximum in a spectrum region in the range of about 540 nm to about 585 nm with a half-width of the luminescence band in the range of about 55 nm to about 75 nm, a quantum yield of photoluminescence in the range of about 0.6 to about 0.8, and an electric conductivity at a temperature of about 20° C. in the range of about | 06-04-2009 |
Roman Drachev, Midland, MI US
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20140220296 | SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY - A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal. | 08-07-2014 |
Roman V. Drachev, Bedford, NH US
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20150068445 | METHOD FOR PRODUCING BULK SILICON CARBIDE - A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. | 03-12-2015 |
20150068446 | METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE USING A SILICON CARBIDE SEED - A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. | 03-12-2015 |
20150068447 | METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE FROM A SILICON CARBIDE PRECURSOR - A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. | 03-12-2015 |
20150068457 | APPARATUS FOR PRODUCING BULK SILICON CARBIDE - A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. | 03-12-2015 |
20150072101 | BULK SILICON CARBIDE HAVING LOW DEFECT DENSITY - A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. | 03-12-2015 |
Vladimir P. Drachev, West Lafayette, IN US
Patent application number | Description | Published |
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20090219623 | Negative Index Material With Compensated Losses - A composition of resonant passive metal-dielectric elements with gain medium results in a meta-material with an effective negative refractive index and compensated losses. To compensate for losses, additional energy is supplied using the stimulated emission from active elements made of a gain material. The overall objective is to overcome the fundamental threshold in resolution for conventional optical imaging limited to about a half-wavelength of incident light. The negative index material with compensated losses (NIMCOL) can be used in NIM-based optical imaging and sensing devices with enhanced sub-wavelength resolution. A lasing device based on overcompensating for the loss in NIM structures is disclosed as well. | 09-03-2009 |
20100134898 | NEAR FIELD SUPER LENS EMPLOYING TUNABLE NEGATIVE INDEX MATERIALS - A tunable super-lens (TSL) for nanoscale optical sensing and imaging of bio-molecules and nano-manufacturing utilizes negative-index materials (NIMs) that operate in the visible or near infrared light. The NIMs can create a lens that will perform sub-wavelength imaging, enhanced resolution imaging, or flat lens imaging. This new TSL covers two different operation scales. For short distances between the object and its image, a near-field super-lens (NFSL) can create or enhance images of objects located at distances much less than the wavelength of light. For the far-zone, negative values are necessary for both the permittivity ε a permeability μ. While well-structured periodic meta-materials, which require delicate design and precise fabrication, can be used, metal-dielectric composites are also candidates for NIMs in the optical range. The negative-refraction in the composite films can be made by using frequency-selective photomodification. | 06-03-2010 |