Patent application number | Description | Published |
20130175588 | COHERENT SPIN FIELD EFFECT TRANSISTOR - A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co | 07-11-2013 |
20130233368 | DOPED BORON CARBIDES AND THERMOELECTRIC APPLICATIONS - A thermoelectric converter is provided where an n-type boron carbide element is paired with a p-type boron carbide element and placed between a eat sink and a high temperature are, such as the ocean in which a submarine operates, and the interior of that submarine, respectively. Boron carbide elements suitable for use in this invention are deposited from meta carborane (n-type) together with dopants to emphasize n-type character, such as chromocene, and orthocarborane, together with dopants to emphasize p-type character, such as 1,4 diaminobenzene to form the p-type element. | 09-12-2013 |
20140170779 | COHERENT SPIN FIELD EFFECT TRANSISTOR - A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co | 06-19-2014 |
20140203382 | BORON CARBIDE FILMS EXHIBITS EXTRAORDINARY MAGNETOCONDUCTANCE AND DEVICES BASED THEREON - Boron carbide polymers prepared from orthocarborane icosahedra cross-linked with a moiety A wherein A is selected from the group consisting of benzene, pyridine. 1, 4-diaminobenzene and mixtures thereof give positive magnetoresistance effects of 30%-80% at room temperature. The novel polymers may be doped with transitional metals to improve electronic and spin performance. These polymers may be deposited by any of a variety of techniques, and may be used in a wide variety of devices including magnetic tunnel junctions, spin-memristors and non-local spin valves. | 07-24-2014 |
20140217375 | NOVEL SEMICONDUCTING ALLOY POLYMERS FORMED FROM ORTHOCARBORANE AND 1,4-DIAMINOBENZENE - Novel semiconducting polymers have been formed via the electron-induced cross-linking of orthocarborane B10C2H2 and 1,4-diaminobenzene. The films were formed by co-condensation of the molecular precursors and 200 eV electron-induced cross-linking under ultra-high vacuum (UHV) conditions. Ultraviolet photoemission spectra show that the compound films display a shift of the valence band maximum from ˜4.3 eV below the Fermi level for pure boron carbide to −1.7 eV below the Fermi level when diaminobenzene is added. The surface photovoltage effect decreases with decreasing B/N atomic ratio. A neutron detector comprises the polymer as the p-type semiconductor to be paired with an n-type semiconductor. | 08-07-2014 |