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Dosunmu
Lawal Adetona Dosunmu, Moorestown, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20100017177 | Method of Predicting and Exhibiting Energy Usage for a Plurality of Buildings - The invention disclosed comprises a device and method for predicting energy usage for a plurality of buildings. Such a prediction is made by acquiring a plurality of building descriptors from at least two descriptor databases for each building of the plurality of buildings. At least one acquired building descriptor is converted into a data format pre-designated for use with an energy calculator and entered into an energy calculator. A prediction of energy usage and at least one building descriptor, such as an address, is exhibited for at least one building. An estimated cost of providing energy for the at least one building may also be calculated. | 01-21-2010 |
Oludotun Dosunmu, Akron, OH US
| Patent application number | Description | Published |
|---|---|---|
| 20080237934 | Method and Device For Producing Electrospun Fibers and Fibers Produced Thereby - The present invention relates to methods for producing fibers made from one or more polymers or polymer composites, and to structures that can be produced from such fibers. In one embodiment, the fibers of the present invention are nanofibers. The present invention also relates to apparatus for producing fibers made from one or more polymers or polymer composites, and methods by which such fibers are made. | 10-02-2008 |
Olufemi I. Dosunmu, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100320502 | GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS - A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region. | 12-23-2010 |
| 20100327381 | SIDEWALL PHOTODETECTOR - Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength. | 12-30-2010 |