Patent application number | Description | Published |
20120286323 | SEMICONDUCTOR COMPONENT WITH IMPROVED SOFTNESS - A semiconductor component includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type arranged distant to the first emitter region in a vertical direction of the semiconductor body, a base region of one of the first and second conductivity types arranged between the first and second emitter regions and having a lower doping concentration than the first second emitter regions, a first field stop zone of the same conductivity type as the base region arranged in the base region, and a second field stop zone of the same conductivity type as the base region arranged in the base region. The second field stop zone is arranged distant to the first field stop in the vertical direction of the semiconductor, the first field stop zone is arranged between the second field stop zone and the second emitter zone, and the second field stop zone includes a plurality of field stop zone sections arranged mutually distant from each other in at least one horizontal direction of the semiconductor body. | 11-15-2012 |
20130264607 | Reverse Conducting Insulated Gate Bipolar Transistor - A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side. | 10-10-2013 |
20130341673 | Reverse Conducting IGBT - A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, and a drift region of the second conductivity type arranged in a semiconductor body. The first and second emitter regions are arranged between the drift region and a first electrode and are each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source region and the body region. A floating parasitic region of the first conductivity type is disposed outside the cell region. | 12-26-2013 |
20130341674 | Reverse Conducting IGBT - A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means. | 12-26-2013 |
20150014743 | IGBT with Emitter Electrode Electrically Connected with an Impurity Zone - An IGBT includes a semiconductor portion with IGBT cells. Each IGBT cell includes a source zone of a first conductivity type, a body zone of a second, complementary conductivity type, and a drift zone of the first conductivity type separated from the source zone by the body zone. An emitter electrode includes a main layer and an interface layer. The interface layer directly adjoins at least one of the body zone and a supplementary zone of the second conductivity type. A contact resistance between the semiconductor portion and the interface layer is higher than between the semiconductor portion and a material of the main layer. For example, the interface layer may reduce diode emitter efficiency and reverse recovery losses in IGBTs. | 01-15-2015 |
20150015309 | Electronic Circuit with a Reverse-Conducting IGBT and Gate Driver Circuit - An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced. | 01-15-2015 |
20150109050 | Method of Operating a Reverse Conducting IGBT - According to an embodiment of a method, a semiconductor device is operated in a reverse biased unipolar mode before operating the semiconductor device in an off-state in a forward biased mode. The semiconductor device includes at least one floating parasitic region disposed outside a cell region of the device. | 04-23-2015 |
20150179636 | Semiconductor Device - A semiconductor device includes at least one field effect transistor structure, which is formed on a semiconductor substrate. The field effect transistor structure includes a drift region, a body region, a source region and a gate. The source region and the drift region include at least mainly a first conductivity type, wherein the body region includes at least mainly a second conductivity type. The body region includes at least one low doping dose portion extending from the drift region to at least one of the source region or an electrical contact interface of the body region at a main surface of the semiconductor substrate, wherein a doping dose within the low doping dose portion of the body region is less than 3 times a breakdown charge. | 06-25-2015 |