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Dora
Emery G. Dora, San Francisco, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080229435 | Mapks as Modifiers of the Rac, Axin, and Beta-Catenin Pathways and Methods of Use - Human MAPK genes are identified as modulators of the Rac, axin, and beta-catenin pathways, and thus are therapeutic targets for disorders associated with defective Rac, axin, and beta-catenin function. Methods for identifying modulators of Rac, axin, and beta-catenin, comprising screening for agents that modulate the activity of MAPK are provided. | 09-18-2008 |
Krishna Murali Dora, Hyderabad IN
| Patent application number | Description | Published |
|---|---|---|
| 20100109618 | METHOD AND SYSTEM FOR MANAGING UNINTERRUPTABLE POWER SUPPLY FOR HARMONIC REDUCTION - A method and system for managing a dual rectifier uninterruptable power supply, comprising activating each of said rectifiers to provide an output DC voltage, monitoring a level of operation of the uninterruptable power supply and deactivating a selected one of said dual rectifiers when a level of operation of said two activate rectifiers is less than a first predetermined level of operation. | 05-06-2010 |
| 20110141783 | CONTROL OF FOUR-LEG TRANSFORMERLESS UNINTERRUPTIBLE POWER SUPPLY - A system and method for managing a 4 leg transformerless Uninterrupted Power Supply is disclosed. The system comprises a 3 leg inverter modulation signal generator that applies signals to a modulation circuit that generates a 4 | 06-16-2011 |
Yuvaraj Dora, Vellore IN
| Patent application number | Description | Published |
|---|---|---|
| 20080308813 | HIGH BREAKDOWN ENHANCEMENT MODE GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH INTEGRATED SLANT FIELD PLATE - High breakdown enhancement mode gallium nitride (GaN) based high electron mobility transistors (HEMTs) with integrated slant field plates. These HEMTs have an epilayer structure comprised of AlGaN/GaN buffer. Before the formation of the gate electrode, a passivation layer is deposited, and then the opening for the gate is patterned. The passivation layer below the gate is etched using an etch condition that creates a slanted sidewalls. Then, the charge below the channel is removed either by Fluorine-based plasma treatment and/or by a recess etch. The gate metal is deposited with an angled rotation to form a gate structure with an inherent field plate with rounded edges. | 12-18-2008 |