Doohyun
Doohyun Kim, Ansan-Si KR
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20140104955 | PROGRAMMING NONVOLATILE MEMORY DEVICE USING PROGRAM VOLTAGE WITH VARIABLE OFFSET - A method of programming a nonvolatile memory device comprises applying at least one test program pulse to selected memory cells located in a scan read area, performing a scan read operation on the selected memory cells following application of the at least one test program pulse to detect at least one one-shot upper cell, calculating an offset voltage corresponding to a scan read region at which the scan read operation is performed, setting a program start bias using the offset voltage, and executing at least one program loop using the program start bias. | 04-17-2014 |
20150078093 | NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD - A programming method includes a first program loop applying first and second pulses to a selected word line and thereafter determining a threshold voltage for the selected memory cell in relation to first and second verification voltages. Then, upon determining that the threshold voltage is lower than the first verification voltage, performing the second program loop by applying the first pulse to the selected word line, or upon determining that the threshold voltage is higher than the first verification voltage and lower than the second verification voltage, performing the second program loop by applying the second pulse to the selected word line. | 03-19-2015 |
20150179272 | NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A nonvolatile memory device may include a memory cell array which is arranged in rows and columns and has multi-level memory cells; a voltage generator providing a plurality of read voltages to a selected row of the memory cell array; and control logic performing a plurality of page read operations using the read voltages. A first read voltage and a second read voltage among the plurality of read voltages are each associated with a higher probability of occurrence of a bit read error than at least one other read voltage among the plurality of read voltages. The control logic uses the first read voltage and the second read voltage in different page read operations than each other. | 06-25-2015 |
20150270008 | NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE HAVING THE SAME AND OPERATION METHOD THEREOF - According to example embodiments, a method of operating a storage device includes reading a process capability index using a memory controller, adjusting at least one operation condition based on the process capability index, and operating one of at least one nonvolatile memory device according to the at least one operation condition adjusted. The process capability index indicates how a structure associated with a memory cell to be operated deviates from a target shape. | 09-24-2015 |
Doohyun Kim, Seoul KR
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20140373379 | DRYER WITH A WASTE HEAT RECOVERY MEANS - A dryer having a waste heat recovery device includes a cabinet, a drum rotatably mounted within the cabinet and having a front surface and a rear surface, an intake duct configured to provide an intake flow path through which air flows into the drum, an exhaust duct configured to exhaust air coming from the drum out of the cabinet, a heater configured to heat air flowing into the drum, and an ambient air duct configured to inhale air from outside the cabinet and supply the air from outside the cabinet into the drum. The waste heat recovery device includes an evaporation unit configured to absorb heat from air that is exhausted from the drum, a condenser unit configured to transfer heat absorbed from the evaporation unit to ambient air that flows into the ambient air duct, and a heat transfer medium configured to transfer heat between the evaporation unit and the condenser unit. The ambient air duct is configured to communicate air from the ambient air duct into the intake duct at a point along a flow path between the drum and the heater. | 12-25-2014 |
Doohyun Lee, Daegu KR
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20150307516 | 2,5,6,7-tetrasubstituted Thiazolo[4,5-b]pyridine Derivatives and Use Thereof - Provided are a pharmaceutical composition containing a 2,5,6,7-tetrasubstituted thiazolo[4,5-b]pyridine derivative represented by Formula 1 as an active ingredient and a use thereof effective on a vascular inflammation-related infectious disease triggered by activity of HMGB1 protein. | 10-29-2015 |
Doohyun Park, Gyeonggi-Do KR
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20150021764 | SEMICONDUCTOR DEVICE WITH REDISTRIBUTION LAYERS ON PARTIAL ENCAPSULATION AND NON-PHOTOSENSITIVE PASSIVATION LAYERS - A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface. | 01-22-2015 |
Doohyun Sung, Gyeongki-Do KR
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20140362743 | RESOURCE ALLOCATION METHOD FOR BACKHAUL LINK AND ACCESS LINK IN A WIRELESS COMMUNICATION SYSTEM INCLUDING RELAY - A resource allocation method of a relay station in a wireless communication system employing the relay station is provided. The method includes: receiving information on a resource allocation pattern for an access link and a backhaul link of a first frequency band; and determining a resource allocation pattern for an access link and a backhaul link of a second frequency band on the basis of the resource allocation pattern of the first frequency band, wherein the first frequency band is any one of an uplink frequency band and a downlink frequency band, and the second frequency band is a remaining one of the uplink frequency band and the downlink frequency band. | 12-11-2014 |